FCPF190N65S3R0L
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onsemi FCPF190N65S3R0L

Manufacturer No:
FCPF190N65S3R0L
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 650V 17A TO220F-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FCPF190N65S3R0L is a high-performance N-channel MOSFET from onsemi's SUPERFET III family. This device is designed for high-voltage applications, leveraging super-junction (SJ) technology to achieve superior efficiency and reliability. The FCPF190N65S3R0L is housed in a TO-220F-3 package, making it suitable for a variety of power management and conversion applications.

Key Specifications

Parameter Value
Voltage Rating (Vds) 650 V
Current Rating (Id) 17 A
On-Resistance (Rds(on)) 190 mΩ @ 10 Vgs
Gate Threshold Voltage (Vgs(th)) 4.5 V @ 1.7 mA
Package Type TO-220F-3
Operating Temperature Range -55°C to 150°C

Key Features

  • High Voltage Capability: The FCPF190N65S3R0L operates at a voltage rating of 650 V, making it suitable for high-voltage applications.
  • Low On-Resistance: With an on-resistance of 190 mΩ, this MOSFET minimizes power losses and enhances overall system efficiency.
  • Super-Junction Technology: Utilizes super-junction technology to improve switching performance and reduce conduction losses.
  • Robust Package: The TO-220F-3 package provides excellent thermal performance and mechanical robustness.
  • High Current Handling: Capable of handling up to 17 A of continuous current, making it suitable for demanding power applications.

Applications

  • Power Factor Correction (PFC): Ideal for use in PFC circuits due to its high voltage and current handling capabilities.
  • DC-DC Converters: Suitable for various DC-DC converter topologies, including buck, boost, and flyback converters.
  • Industrial Power Supplies: Used in high-power industrial power supplies requiring high efficiency and reliability.
  • Electric Vehicle Chargers: Can be used in EV charger designs, particularly in totem pole PFC and LLC configurations.
  • Automotive and Industrial Systems: Applicable in various automotive and industrial systems requiring high-voltage and high-current switching.

Q & A

  1. What is the voltage rating of the FCPF190N65S3R0L MOSFET?

    The voltage rating of the FCPF190N65S3R0L MOSFET is 650 V.

  2. What is the current rating of the FCPF190N65S3R0L MOSFET?

    The current rating of the FCPF190N65S3R0L MOSFET is 17 A.

  3. What is the on-resistance (Rds(on)) of the FCPF190N65S3R0L MOSFET?

    The on-resistance (Rds(on)) of the FCPF190N65S3R0L MOSFET is 190 mΩ @ 10 Vgs.

  4. What package type is the FCPF190N65S3R0L MOSFET available in?

    The FCPF190N65S3R0L MOSFET is available in a TO-220F-3 package.

  5. What are the typical applications of the FCPF190N65S3R0L MOSFET?

    The FCPF190N65S3R0L MOSFET is typically used in power factor correction (PFC), DC-DC converters, industrial power supplies, electric vehicle chargers, and various automotive and industrial systems.

  6. What technology does the FCPF190N65S3R0L MOSFET use?

    The FCPF190N65S3R0L MOSFET uses super-junction (SJ) technology.

  7. What is the operating temperature range of the FCPF190N65S3R0L MOSFET?

    The operating temperature range of the FCPF190N65S3R0L MOSFET is -55°C to 150°C.

  8. Is the FCPF190N65S3R0L MOSFET RoHS compliant?

    Yes, the FCPF190N65S3R0L MOSFET is RoHS compliant.

  9. What are the benefits of using the FCPF190N65S3R0L MOSFET in power management systems?

    The benefits include high voltage capability, low on-resistance, improved switching performance, and robust packaging, which enhance overall system efficiency and reliability.

  10. Can the FCPF190N65S3R0L MOSFET be used in high-power industrial applications?

    Yes, the FCPF190N65S3R0L MOSFET is suitable for high-power industrial applications due to its high voltage and current handling capabilities.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:190mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 1.7mA
Gate Charge (Qg) (Max) @ Vgs:33 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1350 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):144W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220F-3
Package / Case:TO-220-3 Full Pack
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