FCP400N80Z
  • Share:

onsemi FCP400N80Z

Manufacturer No:
FCP400N80Z
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 800V 14A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FCP400N80Z is a high-voltage N-Channel MOSFET from onsemi, part of their SUPERFET II series. This device is designed for high-performance applications requiring robust and reliable power handling. The FCP400N80Z is packaged in a TO-220 configuration, making it suitable for a variety of power management and switching applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)800 V
ID (Continuous Drain Current)14 A
RDS(ON) (On-Resistance)400 mΩ
VGS(th) (Threshold Voltage)2.0 - 4.0 V
PD (Power Dissipation)150 W
TJ (Junction Temperature)-55°C to 150°C
PackageTO-220

Key Features

  • High voltage rating of 800 V, making it suitable for high-power applications.
  • Low on-resistance of 400 mΩ, which minimizes power losses and enhances efficiency.
  • High continuous drain current of 14 A, supporting demanding power requirements.
  • TO-220 package for easy mounting and heat dissipation.
  • Robust and reliable performance due to the SUPERFET II technology.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-voltage switching and power management in industrial and automotive systems.
  • Audio amplifiers and other high-power audio equipment.
  • General-purpose power switching applications requiring high reliability and efficiency.

Q & A

  1. What is the maximum drain-source voltage of the FCP400N80Z? The maximum drain-source voltage is 800 V.
  2. What is the continuous drain current rating of the FCP400N80Z? The continuous drain current rating is 14 A.
  3. What is the on-resistance of the FCP400N80Z? The on-resistance is 400 mΩ.
  4. In what package is the FCP400N80Z available? The FCP400N80Z is available in a TO-220 package.
  5. What is the junction temperature range for the FCP400N80Z? The junction temperature range is -55°C to 150°C.
  6. What are some typical applications for the FCP400N80Z? Typical applications include power supplies, motor control systems, high-voltage switching, and general-purpose power switching.
  7. Is the FCP400N80Z suitable for use in life support systems or FDA Class 3 medical devices? No, the FCP400N80Z is not designed or authorized for use in life support systems or FDA Class 3 medical devices.
  8. What technology does the FCP400N80Z use? The FCP400N80Z uses onsemi's SUPERFET II technology.
  9. What is the power dissipation rating of the FCP400N80Z? The power dissipation rating is 150 W.
  10. Where can I purchase the FCP400N80Z? The FCP400N80Z can be purchased from distributors such as Digi-Key, Mouser, and other authorized onsemi distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:14A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:400mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 1.1mA
Gate Charge (Qg) (Max) @ Vgs:56 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2350 pF @ 1000 V
FET Feature:- 
Power Dissipation (Max):195W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$3.76
140

Please send RFQ , we will respond immediately.

Similar Products

Part Number FCP400N80Z FCPF400N80Z
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 14A (Tc) 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 400mOhm @ 5.5A, 10V 400mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.1mA 4.5V @ 1.1mA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V 56 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2350 pF @ 1000 V 2350 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 195W (Tc) 35.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220F-3
Package / Case TO-220-3 TO-220-3 Full Pack

Related Product By Categories

STP13NK60Z
STP13NK60Z
STMicroelectronics
MOSFET N-CH 600V 13A TO220AB
2N7002 TR PBFREE
2N7002 TR PBFREE
Central Semiconductor Corp
MOSFET N-CH 60V 115MA SOT23
CSD18531Q5AT
CSD18531Q5AT
Texas Instruments
MOSFET N-CH 60V 100A 8VSON
NTD2955T4G
NTD2955T4G
onsemi
MOSFET P-CH 60V 12A DPAK
CSD17318Q2
CSD17318Q2
Texas Instruments
MOSFET N-CH 30V 25A 6WSON
FCPF1300N80Z
FCPF1300N80Z
onsemi
MOSFET N-CH 800V 4A TO220F
STH315N10F7-6
STH315N10F7-6
STMicroelectronics
MOSFET N-CH 100V 180A H2PAK-6
STL36N55M5
STL36N55M5
STMicroelectronics
MOSFET N-CH 550V 22.5A 4PWRFLAT
NTHL050N65S3HF
NTHL050N65S3HF
onsemi
MOSFET N-CH 650V 58A TO247-3
BBS3002-TL-1E
BBS3002-TL-1E
onsemi
MOSFET P-CH 60V 100A D2PAK
STW6N120K3
STW6N120K3
STMicroelectronics
MOSFET N-CH 1200V 6A TO247
FDC658APG
FDC658APG
onsemi
MOSFET P-CH 30V 4A SSOT6

Related Product By Brand

SZESD7461N2T5G
SZESD7461N2T5G
onsemi
TVS DIODE 16VWM 39VC 2XDFN
NRVBS240LT3G
NRVBS240LT3G
onsemi
DIODE SCHOTTKY 40V 2A SMB
MM3Z13VT1G
MM3Z13VT1G
onsemi
DIODE ZENER 13V 300MW SOD323
MM5Z6V2T1G
MM5Z6V2T1G
onsemi
DIODE ZENER 6.2V 500MW SOD523
MJD3055T4G
MJD3055T4G
onsemi
TRANS NPN 60V 10A DPAK
PCA9654EDTR2G
PCA9654EDTR2G
onsemi
IC I/O EXPANDER 8BIT I2C 16TSSOP
LB11660FV-TLM-H
LB11660FV-TLM-H
onsemi
IC MOTOR DRIVER 4V-15V 16SSOP
NCV7707DQCR2G
NCV7707DQCR2G
onsemi
IC DOOR MODULE DRIVER 36SSOP
NCP81101MNTXG
NCP81101MNTXG
onsemi
IC REG BUCK CTLR 1PH 28QFN
MC7812BTG
MC7812BTG
onsemi
IC REG LINEAR 12V 1A TO220AB
FOD817B3SD
FOD817B3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD
FODM8801BR2
FODM8801BR2
onsemi
OPTOISO 3.75KV TRANS 4-MINI-FLAT