FCP400N80Z
  • Share:

onsemi FCP400N80Z

Manufacturer No:
FCP400N80Z
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 800V 14A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FCP400N80Z is a high-voltage N-Channel MOSFET from onsemi, part of their SUPERFET II series. This device is designed for high-performance applications requiring robust and reliable power handling. The FCP400N80Z is packaged in a TO-220 configuration, making it suitable for a variety of power management and switching applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)800 V
ID (Continuous Drain Current)14 A
RDS(ON) (On-Resistance)400 mΩ
VGS(th) (Threshold Voltage)2.0 - 4.0 V
PD (Power Dissipation)150 W
TJ (Junction Temperature)-55°C to 150°C
PackageTO-220

Key Features

  • High voltage rating of 800 V, making it suitable for high-power applications.
  • Low on-resistance of 400 mΩ, which minimizes power losses and enhances efficiency.
  • High continuous drain current of 14 A, supporting demanding power requirements.
  • TO-220 package for easy mounting and heat dissipation.
  • Robust and reliable performance due to the SUPERFET II technology.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-voltage switching and power management in industrial and automotive systems.
  • Audio amplifiers and other high-power audio equipment.
  • General-purpose power switching applications requiring high reliability and efficiency.

Q & A

  1. What is the maximum drain-source voltage of the FCP400N80Z? The maximum drain-source voltage is 800 V.
  2. What is the continuous drain current rating of the FCP400N80Z? The continuous drain current rating is 14 A.
  3. What is the on-resistance of the FCP400N80Z? The on-resistance is 400 mΩ.
  4. In what package is the FCP400N80Z available? The FCP400N80Z is available in a TO-220 package.
  5. What is the junction temperature range for the FCP400N80Z? The junction temperature range is -55°C to 150°C.
  6. What are some typical applications for the FCP400N80Z? Typical applications include power supplies, motor control systems, high-voltage switching, and general-purpose power switching.
  7. Is the FCP400N80Z suitable for use in life support systems or FDA Class 3 medical devices? No, the FCP400N80Z is not designed or authorized for use in life support systems or FDA Class 3 medical devices.
  8. What technology does the FCP400N80Z use? The FCP400N80Z uses onsemi's SUPERFET II technology.
  9. What is the power dissipation rating of the FCP400N80Z? The power dissipation rating is 150 W.
  10. Where can I purchase the FCP400N80Z? The FCP400N80Z can be purchased from distributors such as Digi-Key, Mouser, and other authorized onsemi distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:14A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:400mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 1.1mA
Gate Charge (Qg) (Max) @ Vgs:56 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2350 pF @ 1000 V
FET Feature:- 
Power Dissipation (Max):195W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$3.76
140

Please send RFQ , we will respond immediately.

Similar Products

Part Number FCP400N80Z FCPF400N80Z
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 14A (Tc) 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 400mOhm @ 5.5A, 10V 400mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.1mA 4.5V @ 1.1mA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V 56 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2350 pF @ 1000 V 2350 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 195W (Tc) 35.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220F-3
Package / Case TO-220-3 TO-220-3 Full Pack

Related Product By Categories

PHD71NQ03LT,118
PHD71NQ03LT,118
NXP USA Inc.
TRANSISTOR >30MHZ
FDMC2523P
FDMC2523P
onsemi
MOSFET P-CH 150V 3A 8MLP
CSD19536KTTT
CSD19536KTTT
Texas Instruments
MOSFET N-CH 100V 200A DDPAK
STP3NK90Z
STP3NK90Z
STMicroelectronics
MOSFET N-CH 900V 3A TO220AB
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
NTMFS002P03P8ZT1G
NTMFS002P03P8ZT1G
onsemi
MOSFET, POWER -30V P-CHANNEL, SO
FQB34P10TM-F085
FQB34P10TM-F085
onsemi
MOSFET P-CH 100V 33.5A D2PAK
PH5030AL,115
PH5030AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 91A LFPAK56
STP24N65M2
STP24N65M2
STMicroelectronics
MOSFET N-CH 650V 16A TO220
MCH3477-TL-W
MCH3477-TL-W
onsemi
MOSFET N-CH 20V 4.5A SC70
PMV65XP/MIR
PMV65XP/MIR
Nexperia USA Inc.
MOSFET P-CH 20V 2.8A TO236AB
2N7002E-7-G
2N7002E-7-G
Diodes Incorporated
MOSFET N-CH 60V SOT23

Related Product By Brand

MMBT4401LT1G
MMBT4401LT1G
onsemi
TRANS NPN 40V 0.6A SOT23-3
2N3773G
2N3773G
onsemi
TRANS NPN 140V 16A TO204
SBC856ALT1G
SBC856ALT1G
onsemi
TRANS PNP 65V 0.1A SOT23-3
NTUD3127CT5G
NTUD3127CT5G
onsemi
MOSFET N/P-CH 20V SOT-963
NTK3043NT1G
NTK3043NT1G
onsemi
MOSFET N-CH 20V 210MA SOT723
FCMT125N65S3
FCMT125N65S3
onsemi
MOSFET N-CH 650V 24A 4PQFN
LC709203FXE-01MH
LC709203FXE-01MH
onsemi
IC BATT MON LI-ION 1CELL 9WLCSP
NCP1623ASNT1G
NCP1623ASNT1G
onsemi
ENHANCED HIGH EFFICIENCY POWER F
CAT1021WI30
CAT1021WI30
onsemi
CAT1021 - SUPERVISORY CIRCUIT WI
NCP177AMX330TCG
NCP177AMX330TCG
onsemi
IC REG LINEAR 3.3V 500MA 4XDFN
MC78M05BDTT5G
MC78M05BDTT5G
onsemi
IC REG LINEAR 5V 500MA DPAK
NCV4269AD150R2G
NCV4269AD150R2G
onsemi
IC REG LINEAR 5V 150MA 8SOIC