FCP400N80Z
  • Share:

onsemi FCP400N80Z

Manufacturer No:
FCP400N80Z
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 800V 14A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FCP400N80Z is a high-voltage N-Channel MOSFET from onsemi, part of their SUPERFET II series. This device is designed for high-performance applications requiring robust and reliable power handling. The FCP400N80Z is packaged in a TO-220 configuration, making it suitable for a variety of power management and switching applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)800 V
ID (Continuous Drain Current)14 A
RDS(ON) (On-Resistance)400 mΩ
VGS(th) (Threshold Voltage)2.0 - 4.0 V
PD (Power Dissipation)150 W
TJ (Junction Temperature)-55°C to 150°C
PackageTO-220

Key Features

  • High voltage rating of 800 V, making it suitable for high-power applications.
  • Low on-resistance of 400 mΩ, which minimizes power losses and enhances efficiency.
  • High continuous drain current of 14 A, supporting demanding power requirements.
  • TO-220 package for easy mounting and heat dissipation.
  • Robust and reliable performance due to the SUPERFET II technology.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-voltage switching and power management in industrial and automotive systems.
  • Audio amplifiers and other high-power audio equipment.
  • General-purpose power switching applications requiring high reliability and efficiency.

Q & A

  1. What is the maximum drain-source voltage of the FCP400N80Z? The maximum drain-source voltage is 800 V.
  2. What is the continuous drain current rating of the FCP400N80Z? The continuous drain current rating is 14 A.
  3. What is the on-resistance of the FCP400N80Z? The on-resistance is 400 mΩ.
  4. In what package is the FCP400N80Z available? The FCP400N80Z is available in a TO-220 package.
  5. What is the junction temperature range for the FCP400N80Z? The junction temperature range is -55°C to 150°C.
  6. What are some typical applications for the FCP400N80Z? Typical applications include power supplies, motor control systems, high-voltage switching, and general-purpose power switching.
  7. Is the FCP400N80Z suitable for use in life support systems or FDA Class 3 medical devices? No, the FCP400N80Z is not designed or authorized for use in life support systems or FDA Class 3 medical devices.
  8. What technology does the FCP400N80Z use? The FCP400N80Z uses onsemi's SUPERFET II technology.
  9. What is the power dissipation rating of the FCP400N80Z? The power dissipation rating is 150 W.
  10. Where can I purchase the FCP400N80Z? The FCP400N80Z can be purchased from distributors such as Digi-Key, Mouser, and other authorized onsemi distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:14A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:400mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 1.1mA
Gate Charge (Qg) (Max) @ Vgs:56 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2350 pF @ 1000 V
FET Feature:- 
Power Dissipation (Max):195W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$3.76
140

Please send RFQ , we will respond immediately.

Similar Products

Part Number FCP400N80Z FCPF400N80Z
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 14A (Tc) 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 400mOhm @ 5.5A, 10V 400mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.1mA 4.5V @ 1.1mA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V 56 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2350 pF @ 1000 V 2350 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 195W (Tc) 35.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220F-3
Package / Case TO-220-3 TO-220-3 Full Pack

Related Product By Categories

BSS84KW-TP
BSS84KW-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT323
STP20NM50
STP20NM50
STMicroelectronics
MOSFET N-CH 500V 20A TO220AB
BSS138PW,115
BSS138PW,115
Nexperia USA Inc.
MOSFET N-CH 60V 320MA SOT323
STWA88N65M5
STWA88N65M5
STMicroelectronics
MOSFET N-CH 650V 84A TO247
STD9N40M2
STD9N40M2
STMicroelectronics
MOSFET N-CH 400V 6A DPAK
CSD17581Q5AT
CSD17581Q5AT
Texas Instruments
MOSFET N-CH 30V 24A/123A 8VSON
FDBL86063-F085
FDBL86063-F085
onsemi
MOSFET N-CH 100V 240A 8HPSOF
STL9N60M2
STL9N60M2
STMicroelectronics
MOSFET N-CH 600V 4.8A PWRFLAT56
STD105N10F7AG
STD105N10F7AG
STMicroelectronics
MOSFET N-CH 100V 80A DPAK
BSS138K-7
BSS138K-7
Diodes Incorporated
MOSFET N-CH 50V SOT23 T&R 3K
FDN336P-NL
FDN336P-NL
onsemi
MOSFET P-CH 20V 1.3A SUPERSOT3
NTB52N10T4G
NTB52N10T4G
onsemi
MOSFET N-CH 100V 52A D2PAK

Related Product By Brand

1SMA5942BT3G
1SMA5942BT3G
onsemi
DIODE ZENER 51V 1.5W SMA
SBC856ALT1G
SBC856ALT1G
onsemi
TRANS PNP 65V 0.1A SOT23-3
2SK4177-DL-1E
2SK4177-DL-1E
onsemi
MOSFET N-CH 1500V 2A TO263-2
NVMFS5C410NLWFT3G
NVMFS5C410NLWFT3G
onsemi
MOSFET N-CH 40V 48A/315A 5DFN
PCA9654EDTR2G
PCA9654EDTR2G
onsemi
IC I/O EXPANDER 8BIT I2C 16TSSOP
NCV33274ADR2G
NCV33274ADR2G
onsemi
IC OPAMP GP 4 CIRCUIT 14SOIC
MC74ACT541DTR2G
MC74ACT541DTR2G
onsemi
IC BUF NON-INVERT 5.5V 20TSSOP
MC74AC273DWR2G
MC74AC273DWR2G
onsemi
IC FF D-TYPE SNGL 8BIT 20SOIC
NCP303160MNTWG
NCP303160MNTWG
onsemi
INTEGRATED DRIVER & MOSFFET
NCP302045MNTWG
NCP302045MNTWG
onsemi
IC PWR DRIVER P-CHAN 2:1 31PQFN
NCP1566MNTXG
NCP1566MNTXG
onsemi
IC PWM CTLR ACT CLAMP 24QFN
MC78PC30NTRG
MC78PC30NTRG
onsemi
IC REG LINEAR 3V 150MA 5TSOP