Overview
The FCPF400N80Z is an N-Channel SuperFET® II MOSFET produced by onsemi, formerly part of Fairchild Semiconductor. This high-voltage power MOSFET utilizes advanced Super Junction Technology, providing best-in-class robust body diode performance and high power density. It is designed for applications requiring system efficiency, reliability, and minimal board space. The FCPF400N80Z is particularly suited for AC-DC switch mode power supplies (SMPS), servers, telecom, computing, industrial power supplies, UPS/ESS, solar inverters, and lighting applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Channel Type | N | - |
| Maximum Continuous Drain Current | 11 A (at TC = 25°C), 8.9 A (at TC = 100°C) | A |
| Maximum Drain Source Voltage | 800 V | V |
| Maximum Drain Source Resistance | 340 mΩ | mΩ |
| Channel Mode | Enhancement | - |
| Minimum Gate Threshold Voltage | 2.5 V | V |
| Maximum Power Dissipation | 35.7 W | W |
| Maximum Gate Source Voltage | -30 V, +30 V | V |
| Maximum Operating Temperature | +150 °C | °C |
| Minimum Operating Temperature | -55 °C | °C |
| Package Type | TO-220F | - |
| Mounting Type | Through Hole | - |
| Pin Count | 3 | - |
| Typical Gate Charge @ Vgs | 43 nC @ 10 V | nC |
| Thermal Resistance, Junction to Case | 3.5 °C/W | °C/W |
| Thermal Resistance, Junction to Ambient | 62.5 °C/W | °C/W |
Key Features
- Ultra Low Gate Charge: Typical gate charge of 43 nC at 10 V, enhancing switching performance.
- Low On-Resistance: Typical RDS(on) of 340 mΩ, minimizing conduction loss.
- Low Eoss: Typical energy stored in the output capacitance of 4.1 μJ at 400 V.
- Low Effective Output Capacitance: Typical Coss(eff.) of 138 pF, improving high-frequency performance.
- 100% Avalanche Tested: Ensuring robustness against avalanche conditions.
- ESD Improved Capability: Internal gate-source ESD diode to withstand over 2 kV HBM surge stress.
- RoHS Compliant: Environmentally friendly and compliant with RoHS regulations.
Applications
- AC-DC Power Supplies: Suitable for switch mode power supplies (SMPS) in various applications.
- Servers and Telecom: High power density and efficiency make it ideal for server and telecom infrastructure.
- Computing and Industrial Power Supplies: Used in computing systems and industrial power supplies due to its reliability and efficiency.
- UPS/ESS and Solar Inverters: Applicable in uninterruptible power supplies (UPS), energy storage systems (ESS), and solar inverters.
- Lighting Applications: Suitable for LED lighting and other high-efficiency lighting solutions.
Q & A
- What is the maximum continuous drain current of the FCPF400N80Z MOSFET?
The maximum continuous drain current is 11 A at a case temperature (TC) of 25°C and 8.9 A at TC of 100°C.
- What is the maximum drain source voltage of the FCPF400N80Z?
The maximum drain source voltage (VDS) is 800 V.
- What is the typical on-resistance of the FCPF400N80Z?
The typical on-resistance (RDS(on)) is 340 mΩ.
- What is the minimum gate threshold voltage of the FCPF400N80Z?
The minimum gate threshold voltage is 2.5 V.
- What is the maximum power dissipation of the FCPF400N80Z?
The maximum power dissipation is 35.7 W.
- What is the package type of the FCPF400N80Z?
The package type is TO-220F.
- What are the typical applications of the FCPF400N80Z?
Typical applications include AC-DC power supplies, servers, telecom, computing, industrial power supplies, UPS/ESS, solar inverters, and lighting applications.
- Is the FCPF400N80Z RoHS compliant?
- What is the thermal resistance from junction to case for the FCPF400N80Z?
The thermal resistance from junction to case is 3.5 °C/W.
- What is the typical gate charge of the FCPF400N80Z?
The typical gate charge is 43 nC at 10 V.
