Overview
The FCP125N65S3 is a high-voltage N-Channel MOSFET from ON Semiconductor, part of their SUPERFET III family. This MOSFET utilizes charge-balance technology to achieve outstanding low on-resistance and lower gate charge performance. It is designed to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rates. The Easy Drive series of this MOSFET helps manage EMI issues and simplifies design implementation.
Key Specifications
| Parameter | Value |
|---|---|
| Channel Polarity | N-Channel |
| VDS (Max) | 650 V |
| ID (Max) | 24 A |
| RDS(on) (Max) @ VGS = 10 V | 125 mΩ |
| VGS (Max) | ±30 V |
| VGS(th) (Max) | 4.5 V |
| Qg (Typ) @ VGS = 4.5 V | 44 nC |
| Coss(eff.) (Typ) | 405 pF |
| Internal Gate Resistance | 4 Ω |
| Package Type | TO-220F |
| RoHS Compliance | Yes |
Key Features
- Ultra Low Gate Charge (Typ. Qg = 44 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 405 pF)
- Optimized Capacitance
- Internal Gate Resistance: 4 ohm
- Typical RDS(on) = 105 mΩ
- 100% Avalanche Tested
- RoHS Compliant
Applications
- Telecommunication
- Cloud systems
- Industrial applications
- Telecom power
- Server power
- EV chargers
- Solar and UPS systems
Q & A
- What is the maximum drain-source voltage (VDS) of the FCP125N65S3 MOSFET?
The maximum drain-source voltage (VDS) is 650 V. - What is the maximum drain current (ID) of the FCP125N65S3 MOSFET?
The maximum drain current (ID) is 24 A. - What is the typical on-resistance (RDS(on)) of the FCP125N65S3 MOSFET at VGS = 10 V?
The typical on-resistance (RDS(on)) is 125 mΩ. - What is the maximum gate-source voltage (VGS) of the FCP125N65S3 MOSFET?
The maximum gate-source voltage (VGS) is ±30 V. - What is the typical gate charge (Qg) of the FCP125N65S3 MOSFET at VGS = 4.5 V?
The typical gate charge (Qg) is 44 nC. - What is the package type of the FCP125N65S3 MOSFET?
The package type is TO-220F. - Is the FCP125N65S3 MOSFET RoHS compliant?
Yes, the FCP125N65S3 MOSFET is RoHS compliant. - What are some of the key applications of the FCP125N65S3 MOSFET?
Key applications include telecommunication, cloud systems, industrial applications, telecom power, server power, EV chargers, and solar and UPS systems. - What technology does the FCP125N65S3 MOSFET use to achieve low on-resistance and lower gate charge?
The FCP125N65S3 MOSFET uses charge-balance technology. - What is the internal gate resistance of the FCP125N65S3 MOSFET?
The internal gate resistance is 4 Ω.
