FCH104N60F-F085
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onsemi FCH104N60F-F085

Manufacturer No:
FCH104N60F-F085
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 600V 37A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FCH104N60F-F085 is a high-voltage N-Channel MOSFET from ON Semiconductor, part of their SUPERFET II family. This device utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge performance. It is designed to minimize conduction loss, provide superior switching performance, and offer higher avalanche energy. The FCH104N60F-F085 is particularly suited for soft and hard switching topologies, including high-voltage full bridge and half bridge DC-DC converters, interleaved boost PFC, and boost PFC for HEV-EV automotive applications.

Key Specifications

Parameter Value Unit
Drain to Source Voltage (VDSS) 600 V
Gate to Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) at TC = 25°C 37 A
Continuous Drain Current (ID) at TC = 100°C 24 A
Pulsed Drain Current See Fig. 4 A
Single Pulsed Avalanche Rating (EAS) 809 mJ
MOSFET dv/dt 100 V/ns
Peak Diode Recovery dv/dt 50 V/ns
Power Dissipation (PD) 357 W
Derate Above 25°C 2.85 W/°C
Operating and Storage Temperature (TJ, TSTG) −55 to +150 °C
Drain to Source On Resistance (rDS(on)) at VGS = 10 V, ID = 18.5 A, TJ = 25°C 91 mΩ
Gate Charge (Qg(tot)) at VGS = 10 V, ID = 18.5 A 109 nC nC

Key Features

  • Typical RDS(on) = 91 mΩ at VGS = 10 V, ID = 18.5 A
  • Typical Qg(tot) = 109 nC at VGS = 10 V, ID = 18.5 A
  • UIS Capability
  • Qualified to AEC Q101 and PPAP Capable
  • Pb-Free and RoHS Compliant
  • Optimized body diode reverse recovery performance to remove additional components and improve system reliability

Applications

  • Automotive On Board Charger
  • Automotive DC/DC Converter for HEV (Hybrid Electric Vehicles)
  • High Voltage Full Bridge and Half Bridge DC-DC Converters
  • Interleaved Boost PFC (Power Factor Correction)
  • Boost PFC for HEV-EV automotive applications
  • Server/Telecom Power
  • FPD TV Power
  • ATX Power
  • Industrial Power Applications

Q & A

  1. What is the maximum drain to source voltage (VDSS) of the FCH104N60F-F085 MOSFET?

    The maximum drain to source voltage (VDSS) is 600 V.

  2. What is the continuous drain current (ID) at 25°C and 100°C?

    The continuous drain current (ID) is 37 A at 25°C and 24 A at 100°C.

  3. What is the typical on-resistance (rDS(on)) at VGS = 10 V and ID = 18.5 A?

    The typical on-resistance (rDS(on)) is 91 mΩ.

  4. Is the FCH104N60F-F085 MOSFET qualified to automotive standards?
  5. What are the key applications of the FCH104N60F-F085 MOSFET?

    The key applications include automotive on board chargers, automotive DC/DC converters for HEV, high voltage full bridge and half bridge DC-DC converters, interleaved boost PFC, and boost PFC for HEV-EV automotive applications.

  6. Is the FCH104N60F-F085 Pb-Free and RoHS Compliant?
  7. What is the gate charge (Qg(tot)) at VGS = 10 V and ID = 18.5 A?

    The gate charge (Qg(tot)) is 109 nC.

  8. What is the operating and storage temperature range for the FCH104N60F-F085 MOSFET?

    The operating and storage temperature range is −55 to +150°C.

  9. Does the FCH104N60F-F085 MOSFET have optimized body diode performance?
  10. What is the maximum power dissipation (PD) of the FCH104N60F-F085 MOSFET?

    The maximum power dissipation (PD) is 357 W.

  11. How does the FCH104N60F-F085 MOSFET derate power above 25°C?

    The power dissipation derates by 2.85 W/°C above 25°C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:37A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:104mOhm @ 18.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:139 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4302 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):357W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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