Overview
The FCH104N60F-F085 is a high-voltage N-Channel MOSFET from ON Semiconductor, part of their SUPERFET II family. This device utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge performance. It is designed to minimize conduction loss, provide superior switching performance, and offer higher avalanche energy. The FCH104N60F-F085 is particularly suited for soft and hard switching topologies, including high-voltage full bridge and half bridge DC-DC converters, interleaved boost PFC, and boost PFC for HEV-EV automotive applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (VDSS) | 600 | V |
| Gate to Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) at TC = 25°C | 37 | A |
| Continuous Drain Current (ID) at TC = 100°C | 24 | A |
| Pulsed Drain Current | See Fig. 4 | A |
| Single Pulsed Avalanche Rating (EAS) | 809 | mJ |
| MOSFET dv/dt | 100 | V/ns |
| Peak Diode Recovery dv/dt | 50 | V/ns |
| Power Dissipation (PD) | 357 | W |
| Derate Above 25°C | 2.85 | W/°C |
| Operating and Storage Temperature (TJ, TSTG) | −55 to +150 | °C |
| Drain to Source On Resistance (rDS(on)) at VGS = 10 V, ID = 18.5 A, TJ = 25°C | 91 mΩ | mΩ |
| Gate Charge (Qg(tot)) at VGS = 10 V, ID = 18.5 A | 109 nC | nC |
Key Features
- Typical RDS(on) = 91 mΩ at VGS = 10 V, ID = 18.5 A
- Typical Qg(tot) = 109 nC at VGS = 10 V, ID = 18.5 A
- UIS Capability
- Qualified to AEC Q101 and PPAP Capable
- Pb-Free and RoHS Compliant
- Optimized body diode reverse recovery performance to remove additional components and improve system reliability
Applications
- Automotive On Board Charger
- Automotive DC/DC Converter for HEV (Hybrid Electric Vehicles)
- High Voltage Full Bridge and Half Bridge DC-DC Converters
- Interleaved Boost PFC (Power Factor Correction)
- Boost PFC for HEV-EV automotive applications
- Server/Telecom Power
- FPD TV Power
- ATX Power
- Industrial Power Applications
Q & A
- What is the maximum drain to source voltage (VDSS) of the FCH104N60F-F085 MOSFET?
The maximum drain to source voltage (VDSS) is 600 V.
- What is the continuous drain current (ID) at 25°C and 100°C?
The continuous drain current (ID) is 37 A at 25°C and 24 A at 100°C.
- What is the typical on-resistance (rDS(on)) at VGS = 10 V and ID = 18.5 A?
The typical on-resistance (rDS(on)) is 91 mΩ.
- Is the FCH104N60F-F085 MOSFET qualified to automotive standards?
- What are the key applications of the FCH104N60F-F085 MOSFET?
The key applications include automotive on board chargers, automotive DC/DC converters for HEV, high voltage full bridge and half bridge DC-DC converters, interleaved boost PFC, and boost PFC for HEV-EV automotive applications.
- Is the FCH104N60F-F085 Pb-Free and RoHS Compliant?
- What is the gate charge (Qg(tot)) at VGS = 10 V and ID = 18.5 A?
The gate charge (Qg(tot)) is 109 nC.
- What is the operating and storage temperature range for the FCH104N60F-F085 MOSFET?
The operating and storage temperature range is −55 to +150°C.
- Does the FCH104N60F-F085 MOSFET have optimized body diode performance?
- What is the maximum power dissipation (PD) of the FCH104N60F-F085 MOSFET?
The maximum power dissipation (PD) is 357 W.
- How does the FCH104N60F-F085 MOSFET derate power above 25°C?
The power dissipation derates by 2.85 W/°C above 25°C.
