FCH072N60F-F085
  • Share:

onsemi FCH072N60F-F085

Manufacturer No:
FCH072N60F-F085
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 600V 52A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FCH072N60F-F085 is a high-voltage N-Channel MOSFET from onsemi, part of their SUPERFET II family. This device utilizes advanced charge balance technology to achieve outstanding low on-resistance and lower gate charge performance. It is designed to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rates and higher avalanche energy. This makes it suitable for various AC/DC power conversion applications, contributing to system miniaturization and higher efficiency.

Key Specifications

Parameter Unit Min. Typ. Max.
Drain to Source Voltage (VDSS) V - - 600
Gate to Source Voltage (VGSS) V - - ±20 (DC), ±30 (AC, f > 1 Hz)
Continuous Drain Current (ID) at TC = 25°C A - - 52
Pulsed Drain Current (IDM) A - - 156
Static Drain to Source On Resistance (RDS(on)) at VGS = 10 V, ID = 26 A - 66 72
Total Gate Charge (Qg(tot)) at VGS = 10 V nC - 95 125
Effective Output Capacitance (Coss(eff.)) pF - 421 -
Operating and Storage Temperature Range (TJ, TSTG) °C -55 - 150

Key Features

  • Ultra-low on-resistance (Typ. RDS(on) = 66 mΩ) at VGS = 10 V, ID = 26 A
  • High voltage rating: 600 V at TJ = 150°C
  • Ultra-low gate charge (Typ. Qg = 95 nC)
  • Low effective output capacitance (Typ. Coss(eff.) = 421 pF)
  • 100% avalanche tested
  • Pb-free and RoHS compliant
  • Superior switching performance and high dv/dt capability

Applications

  • Telecom power supplies
  • Server power supplies
  • Industrial power supplies
  • AC/DC power conversion systems

Q & A

  1. What is the maximum drain to source voltage of the FCH072N60F-F085 MOSFET?

    The maximum drain to source voltage (VDSS) is 600 V at TJ = 150°C.

  2. What is the typical on-resistance of the FCH072N60F-F085?

    The typical static drain to source on-resistance (RDS(on)) is 66 mΩ at VGS = 10 V, ID = 26 A.

  3. What is the maximum continuous drain current of the FCH072N60F-F085?

    The maximum continuous drain current (ID) is 52 A at TC = 25°C.

  4. Is the FCH072N60F-F085 Pb-free and RoHS compliant?

    Yes, the FCH072N60F-F085 is Pb-free and RoHS compliant.

  5. What are the typical applications of the FCH072N60F-F085 MOSFET?

    The typical applications include telecom power supplies, server power supplies, industrial power supplies, and AC/DC power conversion systems.

  6. What is the operating and storage temperature range of the FCH072N60F-F085?

    The operating and storage temperature range is -55°C to +150°C.

  7. What is the total gate charge of the FCH072N60F-F085?

    The total gate charge (Qg(tot)) is typically 95 nC at VGS = 10 V.

  8. Is the FCH072N60F-F085 100% avalanche tested?

    Yes, the FCH072N60F-F085 is 100% avalanche tested.

  9. What is the effective output capacitance of the FCH072N60F-F085?

    The effective output capacitance (Coss(eff.)) is typically 421 pF.

  10. Has the FCH072N60F-F085 been discontinued?

    Yes, the FCH072N60F-F085 has been discontinued by onsemi as per their product discontinuance notice.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:52A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:72mOhm @ 26A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:210 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6330 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):481W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

-
318

Please send RFQ , we will respond immediately.

Related Product By Categories

STD80N10F7
STD80N10F7
STMicroelectronics
MOSFET N-CH 100V 70A DPAK
STP5NK60Z
STP5NK60Z
STMicroelectronics
MOSFET N-CH 600V 5A TO220AB
NTHD3101FT1G
NTHD3101FT1G
onsemi
MOSFET P-CH 20V 3.2A CHIPFET
FDB12N50TM
FDB12N50TM
onsemi
MOSFET N-CH 500V 11.5A D2PAK
BSS84PH6327XTSA2
BSS84PH6327XTSA2
Infineon Technologies
MOSFET P-CH 60V 170MA SOT23-3
NVF2955T1G
NVF2955T1G
onsemi
MOSFET P-CH 60V 2.6A SOT223
PSMN2R0-30YLE,115
PSMN2R0-30YLE,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
FDT1600N10ALZ
FDT1600N10ALZ
onsemi
MOSFET N-CH 100V 5.6A SOT223-4
STF3NK100Z
STF3NK100Z
STMicroelectronics
MOSFET N-CH 1000V 2.5A TO220FP
NTHL050N65S3HF
NTHL050N65S3HF
onsemi
MOSFET N-CH 650V 58A TO247-3
STL10N65M2
STL10N65M2
STMicroelectronics
MOSFET N-CH 650V 4.5A POWERFLAT
FDMS86163P-23507X
FDMS86163P-23507X
onsemi
FET -100V 22.0 MOHM PQFN56

Related Product By Brand

NRVBS240LT3G
NRVBS240LT3G
onsemi
DIODE SCHOTTKY 40V 2A SMB
SZ1SMA5924BT3G
SZ1SMA5924BT3G
onsemi
DIODE ZENER 9.1V 1.5W SMA
BD682T
BD682T
onsemi
TRANS PNP DARL 100V 4A TO126
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
NTB6413ANG
NTB6413ANG
onsemi
MOSFET N-CH 100V 42A D2PAK
BMS3004-1EX
BMS3004-1EX
onsemi
MOSFET P-CH TO220-3
MC74HC245ADWR2
MC74HC245ADWR2
onsemi
IC BUS TRANSCVR 3-ST 8B 20SOIC
NL37WZ04USG
NL37WZ04USG
onsemi
IC INVERTER 3CH 3-INP US8
MC74VHC259DR2G
MC74VHC259DR2G
onsemi
IC LATCH ADDRS 8BIT CMOS 16SOIC
NCP81101MNTXG
NCP81101MNTXG
onsemi
IC REG BUCK CTLR 1PH 28QFN
NCP705MTADJTCG
NCP705MTADJTCG
onsemi
IC REG LIN POS ADJ 500MA 6WDFN
NCV4299D2
NCV4299D2
onsemi
IC REG LINEAR 5V 150MA 14SOIC