FCH072N60F-F085
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onsemi FCH072N60F-F085

Manufacturer No:
FCH072N60F-F085
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 600V 52A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FCH072N60F-F085 is a high-voltage N-Channel MOSFET from onsemi, part of their SUPERFET II family. This device utilizes advanced charge balance technology to achieve outstanding low on-resistance and lower gate charge performance. It is designed to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rates and higher avalanche energy. This makes it suitable for various AC/DC power conversion applications, contributing to system miniaturization and higher efficiency.

Key Specifications

Parameter Unit Min. Typ. Max.
Drain to Source Voltage (VDSS) V - - 600
Gate to Source Voltage (VGSS) V - - ±20 (DC), ±30 (AC, f > 1 Hz)
Continuous Drain Current (ID) at TC = 25°C A - - 52
Pulsed Drain Current (IDM) A - - 156
Static Drain to Source On Resistance (RDS(on)) at VGS = 10 V, ID = 26 A - 66 72
Total Gate Charge (Qg(tot)) at VGS = 10 V nC - 95 125
Effective Output Capacitance (Coss(eff.)) pF - 421 -
Operating and Storage Temperature Range (TJ, TSTG) °C -55 - 150

Key Features

  • Ultra-low on-resistance (Typ. RDS(on) = 66 mΩ) at VGS = 10 V, ID = 26 A
  • High voltage rating: 600 V at TJ = 150°C
  • Ultra-low gate charge (Typ. Qg = 95 nC)
  • Low effective output capacitance (Typ. Coss(eff.) = 421 pF)
  • 100% avalanche tested
  • Pb-free and RoHS compliant
  • Superior switching performance and high dv/dt capability

Applications

  • Telecom power supplies
  • Server power supplies
  • Industrial power supplies
  • AC/DC power conversion systems

Q & A

  1. What is the maximum drain to source voltage of the FCH072N60F-F085 MOSFET?

    The maximum drain to source voltage (VDSS) is 600 V at TJ = 150°C.

  2. What is the typical on-resistance of the FCH072N60F-F085?

    The typical static drain to source on-resistance (RDS(on)) is 66 mΩ at VGS = 10 V, ID = 26 A.

  3. What is the maximum continuous drain current of the FCH072N60F-F085?

    The maximum continuous drain current (ID) is 52 A at TC = 25°C.

  4. Is the FCH072N60F-F085 Pb-free and RoHS compliant?

    Yes, the FCH072N60F-F085 is Pb-free and RoHS compliant.

  5. What are the typical applications of the FCH072N60F-F085 MOSFET?

    The typical applications include telecom power supplies, server power supplies, industrial power supplies, and AC/DC power conversion systems.

  6. What is the operating and storage temperature range of the FCH072N60F-F085?

    The operating and storage temperature range is -55°C to +150°C.

  7. What is the total gate charge of the FCH072N60F-F085?

    The total gate charge (Qg(tot)) is typically 95 nC at VGS = 10 V.

  8. Is the FCH072N60F-F085 100% avalanche tested?

    Yes, the FCH072N60F-F085 is 100% avalanche tested.

  9. What is the effective output capacitance of the FCH072N60F-F085?

    The effective output capacitance (Coss(eff.)) is typically 421 pF.

  10. Has the FCH072N60F-F085 been discontinued?

    Yes, the FCH072N60F-F085 has been discontinued by onsemi as per their product discontinuance notice.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:52A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:72mOhm @ 26A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:210 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6330 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):481W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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