FCD1300N80Z
  • Share:

onsemi FCD1300N80Z

Manufacturer No:
FCD1300N80Z
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 800V 4A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FCPF1300N80Z is a high-voltage N-Channel MOSFET from onsemi, part of their SUPERFET II family. This device utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge performance. It is designed to minimize conduction loss, provide superior switching performance, and handle high dv/dt rates and avalanche energy. The internal gate-source ESD diode enhances the device's ability to withstand over 2 kV HBM surge stress, making it highly suitable for various switching power applications.

Key Specifications

Parameter Value Unit
Drain to Source Voltage (VDSS) 800 V
Gate to Source Voltage (VGSS) ±20 (DC), ±30 (AC, f > 1 Hz) V
Continuous Drain Current (ID) 6.0 A (TC = 25°C), 3.8 A (TC = 100°C) A
Pulsed Drain Current (IDM) 12 A A
Static Drain to Source On Resistance (RDS(on)) 1.05 Ω (Typ.), 1.3 Ω (Max.) Ω
Gate Threshold Voltage (VGS(th)) 2.5 - 4.5 V V
Thermal Resistance, Junction to Case (RθJC) 5.2 °C/W °C/W
Thermal Resistance, Junction to Ambient (RθJA) 62.5 °C/W °C/W
Operating and Storage Temperature Range (TJ, TSTG) -55 to +150 °C °C

Key Features

  • Ultra Low Gate Charge (Typ. Qg = 16.2 nC)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 48.7 pF)
  • Low Eoss (Typ. 1.57 μJ @ 400 V)
  • 100% Avalanche Tested
  • RoHS Compliant
  • ESD Improved Capability
  • Internal gate-source ESD diode to withstand over 2 kV HBM surge stress

Applications

  • AC-DC Power Supply
  • Laptop Adapters
  • LED Lighting
  • ATX Power Supplies
  • Industrial Power Applications
  • Audio Power Applications

Q & A

  1. What is the maximum drain to source voltage of the FCPF1300N80Z?

    The maximum drain to source voltage (VDSS) is 800 V.

  2. What is the typical on-resistance of the FCPF1300N80Z?

    The typical static drain to source on-resistance (RDS(on)) is 1.05 Ω.

  3. What is the maximum continuous drain current at 25°C?

    The maximum continuous drain current (ID) at 25°C is 6.0 A.

  4. Is the FCPF1300N80Z RoHS compliant?
  5. What is the thermal resistance from junction to case?

    The thermal resistance from junction to case (RθJC) is 5.2 °C/W.

  6. What are the typical applications of the FCPF1300N80Z?

    The FCPF1300N80Z is typically used in AC-DC power supplies, laptop adapters, LED lighting, ATX power supplies, and industrial power applications.

  7. What is the gate threshold voltage range of the FCPF1300N80Z?

    The gate threshold voltage (VGS(th)) range is 2.5 to 4.5 V.

  8. Does the FCPF1300N80Z have ESD protection?
  9. What is the maximum operating temperature of the FCPF1300N80Z?

    The maximum operating temperature is 150°C.

  10. What is the typical total gate charge at 10 V?

    The typical total gate charge (Qg) at 10 V is 16.2 nC.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.3Ohm @ 2A, 10V
Vgs(th) (Max) @ Id:4.5V @ 400µA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:880 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):52W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$1.53
65

Please send RFQ , we will respond immediately.

Related Product By Categories

PHD71NQ03LT,118
PHD71NQ03LT,118
NXP USA Inc.
TRANSISTOR >30MHZ
STP80NF70
STP80NF70
STMicroelectronics
MOSFET N-CH 68V 98A TO220AB
BSS84-TP
BSS84-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT23
FCD380N60E
FCD380N60E
onsemi
MOSFET N-CH 600V 10.2A DPAK
PSMN1R0-40YLDX
PSMN1R0-40YLDX
Nexperia USA Inc.
MOSFET N-CH 40V 280A LFPAK56
NTS4173PT1G
NTS4173PT1G
onsemi
MOSFET P-CH 30V 1.2A SC70-3
FDBL86063-F085
FDBL86063-F085
onsemi
MOSFET N-CH 100V 240A 8HPSOF
BUK9M85-60EX
BUK9M85-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 12.8A LFPAK33
STP14NK60ZFP
STP14NK60ZFP
STMicroelectronics
MOSFET N-CH 600V 13.5A TO220FP
STH150N10F7-2
STH150N10F7-2
STMicroelectronics
MOSFET N-CH 100V 110A H2PAK-2
PH5030AL,115
PH5030AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 91A LFPAK56
FDB075N15A_SN00284
FDB075N15A_SN00284
onsemi
MOSFET N-CH 150V 130A D2PAK

Related Product By Brand

SURA8210T3G
SURA8210T3G
onsemi
DIODE GEN PURP 100V 2A SMA
MMBTA55LT1G
MMBTA55LT1G
onsemi
TRANS PNP 60V 0.5A SOT23-3
DTC114TM3T5G
DTC114TM3T5G
onsemi
TRANS PREBIAS NPN 50V SOT723
FDG6332C
FDG6332C
onsemi
MOSFET N/P-CH 20V SC70-6
2SK4177-DL-1E
2SK4177-DL-1E
onsemi
MOSFET N-CH 1500V 2A TO263-2
NCS20072DR2G
NCS20072DR2G
onsemi
IC OPAMP GP 2 CIRCUIT 8SOIC
MC74HCT125ADR2G
MC74HCT125ADR2G
onsemi
IC BUFFER NON-INVERT 6V 14SOIC
MC74AC14DTR2G
MC74AC14DTR2G
onsemi
IC INVERTER 6CH 1-INP 14TSSOP
NCP1015AP100G
NCP1015AP100G
onsemi
IC OFFLINE SWITCH FLYBACK 7DIP
MC33275ST-5.0T3G
MC33275ST-5.0T3G
onsemi
IC REG LINEAR 5V 300MA SOT223
MC79L12ACPG
MC79L12ACPG
onsemi
IC REG LINEAR -12V 100MA TO92-3
NCV4299D2
NCV4299D2
onsemi
IC REG LINEAR 5V 150MA 14SOIC