FCD1300N80Z
  • Share:

onsemi FCD1300N80Z

Manufacturer No:
FCD1300N80Z
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 800V 4A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FCPF1300N80Z is a high-voltage N-Channel MOSFET from onsemi, part of their SUPERFET II family. This device utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge performance. It is designed to minimize conduction loss, provide superior switching performance, and handle high dv/dt rates and avalanche energy. The internal gate-source ESD diode enhances the device's ability to withstand over 2 kV HBM surge stress, making it highly suitable for various switching power applications.

Key Specifications

Parameter Value Unit
Drain to Source Voltage (VDSS) 800 V
Gate to Source Voltage (VGSS) ±20 (DC), ±30 (AC, f > 1 Hz) V
Continuous Drain Current (ID) 6.0 A (TC = 25°C), 3.8 A (TC = 100°C) A
Pulsed Drain Current (IDM) 12 A A
Static Drain to Source On Resistance (RDS(on)) 1.05 Ω (Typ.), 1.3 Ω (Max.) Ω
Gate Threshold Voltage (VGS(th)) 2.5 - 4.5 V V
Thermal Resistance, Junction to Case (RθJC) 5.2 °C/W °C/W
Thermal Resistance, Junction to Ambient (RθJA) 62.5 °C/W °C/W
Operating and Storage Temperature Range (TJ, TSTG) -55 to +150 °C °C

Key Features

  • Ultra Low Gate Charge (Typ. Qg = 16.2 nC)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 48.7 pF)
  • Low Eoss (Typ. 1.57 μJ @ 400 V)
  • 100% Avalanche Tested
  • RoHS Compliant
  • ESD Improved Capability
  • Internal gate-source ESD diode to withstand over 2 kV HBM surge stress

Applications

  • AC-DC Power Supply
  • Laptop Adapters
  • LED Lighting
  • ATX Power Supplies
  • Industrial Power Applications
  • Audio Power Applications

Q & A

  1. What is the maximum drain to source voltage of the FCPF1300N80Z?

    The maximum drain to source voltage (VDSS) is 800 V.

  2. What is the typical on-resistance of the FCPF1300N80Z?

    The typical static drain to source on-resistance (RDS(on)) is 1.05 Ω.

  3. What is the maximum continuous drain current at 25°C?

    The maximum continuous drain current (ID) at 25°C is 6.0 A.

  4. Is the FCPF1300N80Z RoHS compliant?
  5. What is the thermal resistance from junction to case?

    The thermal resistance from junction to case (RθJC) is 5.2 °C/W.

  6. What are the typical applications of the FCPF1300N80Z?

    The FCPF1300N80Z is typically used in AC-DC power supplies, laptop adapters, LED lighting, ATX power supplies, and industrial power applications.

  7. What is the gate threshold voltage range of the FCPF1300N80Z?

    The gate threshold voltage (VGS(th)) range is 2.5 to 4.5 V.

  8. Does the FCPF1300N80Z have ESD protection?
  9. What is the maximum operating temperature of the FCPF1300N80Z?

    The maximum operating temperature is 150°C.

  10. What is the typical total gate charge at 10 V?

    The typical total gate charge (Qg) at 10 V is 16.2 nC.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.3Ohm @ 2A, 10V
Vgs(th) (Max) @ Id:4.5V @ 400µA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:880 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):52W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$1.53
65

Please send RFQ , we will respond immediately.

Related Product By Categories

NTNS3193NZT5G
NTNS3193NZT5G
onsemi
MOSFET N-CH 20V 224MA 3XLLGA
STB36NM60ND
STB36NM60ND
STMicroelectronics
MOSFET N-CH 600V 29A D2PAK
IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
2N7002-TP
2N7002-TP
Micro Commercial Co
MOSFET N-CH 60V 115MA SOT23
STD36P4LLF6
STD36P4LLF6
STMicroelectronics
MOSFET P-CH 40V 36A DPAK
STP3NK90Z
STP3NK90Z
STMicroelectronics
MOSFET N-CH 900V 3A TO220AB
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
STL220N6F7
STL220N6F7
STMicroelectronics
MOSFET N-CH 60V 120A POWERFLAT
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
FDMC4435BZ-F127-L701
FDMC4435BZ-F127-L701
onsemi
SINGLE ST3 P Z MLP3.3X3.3
STU10N60M2
STU10N60M2
STMicroelectronics
MOSFET N-CH 600V 7.5A IPAK
PH5030AL,115
PH5030AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 91A LFPAK56

Related Product By Brand

ESD9D5.0ST5G
ESD9D5.0ST5G
onsemi
TVS DIODE 5VWM 13.5VC SOD923
MMBZ5244BLT1G
MMBZ5244BLT1G
onsemi
DIODE ZENER 14V 225MW SOT23-3
SMUN5311DW1T3G
SMUN5311DW1T3G
onsemi
TRANS NPN/PNP PREBIAS SOT363
2N3773G
2N3773G
onsemi
TRANS NPN 140V 16A TO204
FDA28N50F
FDA28N50F
onsemi
MOSFET N-CH 500V 28A TO3PN
BSS138LT7G
BSS138LT7G
onsemi
MOSFET N-CH 50V 200MA SOT23-3
MC74VHC1G32DTT1G
MC74VHC1G32DTT1G
onsemi
IC GATE OR 1CH 2-INP 5TSOP
MC100EP16VBDTG
MC100EP16VBDTG
onsemi
IC RCVR/DRVR ECL DIFF 5V 8TSSOP
NCP303160MNTWG
NCP303160MNTWG
onsemi
INTEGRATED DRIVER & MOSFFET
MC33375ST-3.0T3G
MC33375ST-3.0T3G
onsemi
IC REG LINEAR 3V 300MA SOT223
FOD817A3SD
FOD817A3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD
FODM217CR2V
FODM217CR2V
onsemi
OPTOCOUPLER PHOTOTRANS MFP4