FCD1300N80Z
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onsemi FCD1300N80Z

Manufacturer No:
FCD1300N80Z
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 800V 4A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FCPF1300N80Z is a high-voltage N-Channel MOSFET from onsemi, part of their SUPERFET II family. This device utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge performance. It is designed to minimize conduction loss, provide superior switching performance, and handle high dv/dt rates and avalanche energy. The internal gate-source ESD diode enhances the device's ability to withstand over 2 kV HBM surge stress, making it highly suitable for various switching power applications.

Key Specifications

Parameter Value Unit
Drain to Source Voltage (VDSS) 800 V
Gate to Source Voltage (VGSS) ±20 (DC), ±30 (AC, f > 1 Hz) V
Continuous Drain Current (ID) 6.0 A (TC = 25°C), 3.8 A (TC = 100°C) A
Pulsed Drain Current (IDM) 12 A A
Static Drain to Source On Resistance (RDS(on)) 1.05 Ω (Typ.), 1.3 Ω (Max.) Ω
Gate Threshold Voltage (VGS(th)) 2.5 - 4.5 V V
Thermal Resistance, Junction to Case (RθJC) 5.2 °C/W °C/W
Thermal Resistance, Junction to Ambient (RθJA) 62.5 °C/W °C/W
Operating and Storage Temperature Range (TJ, TSTG) -55 to +150 °C °C

Key Features

  • Ultra Low Gate Charge (Typ. Qg = 16.2 nC)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 48.7 pF)
  • Low Eoss (Typ. 1.57 μJ @ 400 V)
  • 100% Avalanche Tested
  • RoHS Compliant
  • ESD Improved Capability
  • Internal gate-source ESD diode to withstand over 2 kV HBM surge stress

Applications

  • AC-DC Power Supply
  • Laptop Adapters
  • LED Lighting
  • ATX Power Supplies
  • Industrial Power Applications
  • Audio Power Applications

Q & A

  1. What is the maximum drain to source voltage of the FCPF1300N80Z?

    The maximum drain to source voltage (VDSS) is 800 V.

  2. What is the typical on-resistance of the FCPF1300N80Z?

    The typical static drain to source on-resistance (RDS(on)) is 1.05 Ω.

  3. What is the maximum continuous drain current at 25°C?

    The maximum continuous drain current (ID) at 25°C is 6.0 A.

  4. Is the FCPF1300N80Z RoHS compliant?
  5. What is the thermal resistance from junction to case?

    The thermal resistance from junction to case (RθJC) is 5.2 °C/W.

  6. What are the typical applications of the FCPF1300N80Z?

    The FCPF1300N80Z is typically used in AC-DC power supplies, laptop adapters, LED lighting, ATX power supplies, and industrial power applications.

  7. What is the gate threshold voltage range of the FCPF1300N80Z?

    The gate threshold voltage (VGS(th)) range is 2.5 to 4.5 V.

  8. Does the FCPF1300N80Z have ESD protection?
  9. What is the maximum operating temperature of the FCPF1300N80Z?

    The maximum operating temperature is 150°C.

  10. What is the typical total gate charge at 10 V?

    The typical total gate charge (Qg) at 10 V is 16.2 nC.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.3Ohm @ 2A, 10V
Vgs(th) (Max) @ Id:4.5V @ 400µA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:880 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):52W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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$1.53
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