CPH3355-TL-W
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onsemi CPH3355-TL-W

Manufacturer No:
CPH3355-TL-W
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 2.5A 3CPH
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CPH3355-TL-W is a P-Channel Power MOSFET produced by onsemi. This component is designed for high-performance applications requiring low on-resistance and high current handling. Although the CPH3355-TL-W is currently obsolete and no longer manufactured, it remains a significant component in many existing designs.

The MOSFET is packaged in a SOT23-3 case, which is a compact surface mount package suitable for a wide range of electronic circuits. It features a trench technology design that minimizes gate charge and on-resistance, making it suitable for applications with low gate charge driving or low on-resistance requirements.

Key Specifications

Parameter Value Unit
Part Number CPH3355-TL-W
Manufacturer onsemi
Package SOT23-3
Transistor Polarity P-Channel
Drain-Source Breakdown Voltage (Vds) 30 V V
Continuous Drain Current (Id) 2.5 A A
Drain-Source On-Resistance (Rds On) 213 mOhms mOhms
Gate-Source Voltage (Vgs) -20 V, +20 V V
Gate Charge (Qg) 3.9 nC nC
Minimum Operating Temperature -55 °C °C
Maximum Operating Temperature +150 °C °C
Power Dissipation (Pd) 1 W W
Rise Time 4.2 ns ns
Fall Time 10.6 ns ns
Typical Turn-On Delay Time 4.5 ns ns
Typical Turn-Off Delay Time 20 ns ns

Key Features

  • Trench Technology: The CPH3355-TL-W is produced using onsemi's trench technology, which minimizes gate charge and on-resistance, making it suitable for applications requiring low gate charge driving or low on-resistance.
  • Low On-Resistance: With a drain-source on-resistance of 213 mOhms, this MOSFET offers efficient switching and minimal power loss.
  • High Current Handling: Capable of handling a continuous drain current of 2.5 A and a peak current of 10 A for short pulses.
  • Compact Package: Packaged in a SOT23-3 case, which is a compact surface mount package ideal for space-constrained designs.
  • ESD Protection: The gate is ESD diode-protected, enhancing the component's reliability in harsh environments.
  • RoHS Compliance: The component is Pb-Free, Halogen Free, and RoHS compliant, making it suitable for use in environmentally friendly designs.

Applications

  • Load Switching: Ideal for load switching applications where high current and low on-resistance are required.
  • Motor Drivers: Suitable for motor driver applications due to its high current handling and low on-resistance.
  • Power Management: Can be used in various power management circuits requiring efficient switching and high current capability.
  • Automotive and Industrial Systems: Applicable in automotive and industrial systems where reliability and high performance are critical.

Q & A

  1. What is the part number of this MOSFET?

    The part number of this MOSFET is CPH3355-TL-W.

  2. Who is the manufacturer of the CPH3355-TL-W?

    The CPH3355-TL-W is manufactured by onsemi.

  3. What is the package type of the CPH3355-TL-W?

    The CPH3355-TL-W is packaged in a SOT23-3 case.

  4. What is the drain-source breakdown voltage (Vds) of the CPH3355-TL-W?

    The drain-source breakdown voltage (Vds) is 30 V.

  5. What is the continuous drain current (Id) of the CPH3355-TL-W?

    The continuous drain current (Id) is 2.5 A.

  6. What is the typical turn-on delay time of the CPH3355-TL-W?

    The typical turn-on delay time is 4.5 ns.

  7. Is the CPH3355-TL-W RoHS compliant?

    Yes, the CPH3355-TL-W is Pb-Free, Halogen Free, and RoHS compliant.

  8. What are some typical applications of the CPH3355-TL-W?

    Typical applications include load switching, motor drivers, power management, and use in automotive and industrial systems.

  9. What is the maximum operating temperature of the CPH3355-TL-W?

    The maximum operating temperature is +150 °C.

  10. Is the CPH3355-TL-W still in production?

    No, the CPH3355-TL-W is obsolete and no longer manufactured.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:156mOhm @ 1A, 10V
Vgs(th) (Max) @ Id:2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:3.9 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:172 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):1W (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:3-CPH
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
CPH3355-TL-H
CPH3355-TL-H
CPH3355 - SINGLE P-CHANNEL POWER

Similar Products

Part Number CPH3355-TL-W CPH6355-TL-W CPH3455-TL-W CPH3356-TL-W CPH3350-TL-W CPH3351-TL-W CPH3355-TL-H
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Active Obsolete Obsolete Obsolete Obsolete Active
FET Type P-Channel P-Channel N-Channel P-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 35 V 20 V 20 V 60 V 30 V
Current - Continuous Drain (Id) @ 25°C 2.5A (Ta) 3A (Ta) 3A (Ta) 2.5A (Ta) 3A (Ta) 1.8A (Ta) 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V 4V, 10V 4V, 10V 1.8V, 4.5V 1.8V, 4.5V 4V, 10V 4V, 10V
Rds On (Max) @ Id, Vgs 156mOhm @ 1A, 10V 169mOhm @ 1.5A, 10V 104mOhm @ 1.5A, 10V 137mOhm @ 1A, 4.5V 83mOhm @ 1.5A, 4.5V 250mOhm @ 1A, 10V 156mOhm @ 1A, 10V
Vgs(th) (Max) @ Id 2.6V @ 1mA 2.6V @ 1mA 2.6V @ 1mA 1.4V @ 1mA - 2.6V @ 1mA 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 3.9 nC @ 10 V 3.9 nC @ 10 V 4 nC @ 10 V 3.3 nC @ 4.5 V 4.6 nC @ 4.5 V 6 nC @ 10 V 3.9 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±10V ±10V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 172 pF @ 10 V 172 pF @ 10 V 186 pF @ 20 V 250 pF @ 10 V 375 pF @ 10 V 262 pF @ 20 V 172 pF @ 10 V
FET Feature - - - - - - -
Power Dissipation (Max) 1W (Ta) 1.6W (Ta) 1W (Ta) 1W (Ta) 1W (Ta) 1W (Ta) 1W (Ta)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 3-CPH 6-CPH 3-CPH 3-CPH 3-CPH 3-CPH 3-CPH
Package / Case TO-236-3, SC-59, SOT-23-3 SOT-23-6 Thin, TSOT-23-6 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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