CPH3351-TL-W
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onsemi CPH3351-TL-W

Manufacturer No:
CPH3351-TL-W
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 60V 1.8A 3CPH
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The CPH3351-TL-W is a single P-Channel Power MOSFET produced by ON Semiconductor. This component is designed to offer high performance and reliability in various power management applications. Although it is currently listed as obsolete and no longer manufactured, it remains relevant for existing designs and maintenance of older systems.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)40 V
VGS (Gate-Source Voltage)±20 V
ID (Continuous Drain Current)See datasheet for detailed current ratings
RDS(ON) (On-Resistance)Leading on-resistance for its class
PackageTSSOP-8

Key Features

  • Low on-resistance, enhancing efficiency in power management
  • High voltage rating of 40V, suitable for various power applications
  • P-Channel configuration, ideal for motor driver and other power switching applications
  • Compact TSSOP-8 package, facilitating space-efficient designs

Applications

  • Motor drivers: The low on-resistance and high voltage rating make it suitable for motor control applications.
  • Power switching: Ideal for applications requiring efficient power switching and management.
  • General power management: Can be used in a variety of power management circuits where a P-Channel MOSFET is required.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the CPH3351-TL-W?
    The maximum drain-source voltage is 40 V.
  2. What is the typical on-resistance (RDS(ON)) of this MOSFET?
    The on-resistance is leading for its class, but exact values should be obtained from the datasheet.
  3. What is the package type of the CPH3351-TL-W?
    The package type is TSSOP-8.
  4. Is the CPH3351-TL-W still in production?
    No, the CPH3351-TL-W is currently listed as obsolete and no longer manufactured.
  5. What are some common applications for the CPH3351-TL-W?
    Common applications include motor drivers, power switching, and general power management.
  6. What is the maximum gate-source voltage (VGS) for this MOSFET?
    The maximum gate-source voltage is ±20 V.
  7. Where can I find detailed specifications for the CPH3351-TL-W?
    Detailed specifications can be found in the datasheet available from ON Semiconductor or distributors like Digi-Key and Mouser.
  8. What are the benefits of using a P-Channel MOSFET like the CPH3351-TL-W?
    The benefits include low on-resistance, high voltage rating, and suitability for motor driver and other power switching applications.
  9. Can I still purchase the CPH3351-TL-W if it is obsolete?
    While it is no longer manufactured, it may still be available from inventory or through substitute components recommended by distributors.
  10. How do I choose a substitute for the CPH3351-TL-W?
    Substitute components can be identified through recommendations from distributors like Digi-Key, which often provide lists of compatible alternatives.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:250mOhm @ 1A, 10V
Vgs(th) (Max) @ Id:2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:6 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:262 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):1W (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:3-CPH
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number CPH3351-TL-W CPH3355-TL-W CPH3356-TL-W CPH3350-TL-W
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete
FET Type P-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 30 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 1.8A (Ta) 2.5A (Ta) 2.5A (Ta) 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V 4V, 10V 1.8V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 250mOhm @ 1A, 10V 156mOhm @ 1A, 10V 137mOhm @ 1A, 4.5V 83mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 2.6V @ 1mA 2.6V @ 1mA 1.4V @ 1mA -
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 10 V 3.9 nC @ 10 V 3.3 nC @ 4.5 V 4.6 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±10V ±10V
Input Capacitance (Ciss) (Max) @ Vds 262 pF @ 20 V 172 pF @ 10 V 250 pF @ 10 V 375 pF @ 10 V
FET Feature - - - -
Power Dissipation (Max) 1W (Ta) 1W (Ta) 1W (Ta) 1W (Ta)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 3-CPH 3-CPH 3-CPH 3-CPH
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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