BSS84LT1G
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onsemi BSS84LT1G

Manufacturer No:
BSS84LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 50V 130MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS84LT1G is a power MOSFET produced by onsemi, designed for a variety of applications requiring a single P-channel device. This MOSFET is packaged in a compact SOT-23 surface mount package, which saves board space and is ideal for space-constrained designs. The device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications that require stringent quality and reliability standards. It is also Pb-free and RoHS compliant, aligning with environmental regulations.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS -50 Vdc
Gate-to-Source Voltage - Continuous VGS ± 20 Vdc
Drain Current - Continuous ID -130 mA
Pulsed Drain Current (tp ≤ 10 μs) IDM -520 mA
Total Power Dissipation @ TA = 25°C PD 225 mW
Operating and Storage Temperature Range TJ -55 to 150 °C
On-Resistance (RDS(ON)) @ VGS = -10 V, VDS = -10 V RDS(ON) 10 Ω

Key Features

  • Compact SOT-23 Package: Saves board space and is ideal for space-constrained designs.
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring stringent quality and reliability standards.
  • Pb-free and RoHS Compliant: Aligns with environmental regulations.
  • Low On-Resistance: RDS(ON) of 10 Ω at VGS = -10 V, VDS = -10 V, ensuring efficient switching.
  • Fast Switching Times: Turn-on delay time of 3.6 ns, rise time of 9.7 ns, turn-off delay time of 12 ns, and fall time of 1.7 ns.

Applications

  • Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
  • Power Management: Used in power management circuits where low on-resistance and fast switching times are critical.
  • Consumer Electronics: Ideal for use in consumer electronics where space is limited and high reliability is required.
  • Industrial Control Systems: Can be used in industrial control systems that require robust and reliable power switching.

Q & A

  1. What is the maximum drain-to-source voltage of the BSS84LT1G?

    The maximum drain-to-source voltage (VDSS) is -50 Vdc.

  2. What is the continuous drain current rating of the BSS84LT1G?

    The continuous drain current (ID) is -130 mA.

  3. Is the BSS84LT1G RoHS compliant?

    Yes, the BSS84LT1G is Pb-free and RoHS compliant.

  4. What is the on-resistance (RDS(ON)) of the BSS84LT1G?

    The on-resistance (RDS(ON)) is 10 Ω at VGS = -10 V, VDS = -10 V.

  5. What are the typical switching times for the BSS84LT1G?

    The typical switching times are: turn-on delay time of 3.6 ns, rise time of 9.7 ns, turn-off delay time of 12 ns, and fall time of 1.7 ns.

  6. What is the operating temperature range for the BSS84LT1G?

    The operating temperature range is -55°C to 150°C.

  7. Is the BSS84LT1G suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.

  8. What package type does the BSS84LT1G come in?

    The BSS84LT1G comes in a SOT-23 surface mount package.

  9. What is the total power dissipation rating for the BSS84LT1G at TA = 25°C?

    The total power dissipation (PD) is 225 mW at TA = 25°C.

  10. Can the BSS84LT1G be used in consumer electronics?

    Yes, it is ideal for use in consumer electronics where space is limited and high reliability is required.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:130mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:30 pF @ 5 V
FET Feature:- 
Power Dissipation (Max):225mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
BVSS84LT1G
BVSS84LT1G
MOSFET P-CH 50V 130MA SOT23-3
SBSS84LT1G
SBSS84LT1G
MOSFET P-CH 50V 130MA SOT23-3

Similar Products

Part Number BSS84LT1G BSS84LT7G BSS84LT1
Manufacturer onsemi onsemi onsemi
Product Status Active Active Obsolete
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V 50 V 50 V
Current - Continuous Drain (Id) @ 25°C 130mA (Ta) 130mA (Ta) 130mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V 5V -
Rds On (Max) @ Id, Vgs 10Ohm @ 100mA, 5V 10Ohm @ 100mA, 5V 10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 2.2 nC @ 10 V -
Vgs (Max) ±20V ±20V -
Input Capacitance (Ciss) (Max) @ Vds 30 pF @ 5 V 36 pF @ 5 V 30 pF @ 5 V
FET Feature - - -
Power Dissipation (Max) 225mW (Ta) 225mW (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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