Overview
The BSS84LT7G is a P-channel enhancement mode field-effect transistor (FET) produced by onsemi. This device is fabricated using onsemi's proprietary high cell density DMOS technology, which minimizes on-state resistance and provides rugged and reliable performance along with fast switching capabilities. The BSS84LT7G is particularly suited for low-voltage applications requiring a low-current high-side switch and can handle continuous drain currents up to 0.13 A and pulsed currents up to 0.52 A.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDSS | -50 | V |
| Gate-Source Voltage | VGSS | ±20 | V |
| Continuous Drain Current | ID | -0.13 | A |
| Pulsed Drain Current | IDM | -0.52 | A |
| Maximum Power Dissipation | PD | 0.36 | W |
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 to +150 | °C |
| Gate Threshold Voltage | VGS(th) | -0.8 to -2 | V |
| Static Drain-Source On-Resistance | RDS(on) | 10 Ω at VGS = -5 V | Ω |
Key Features
- Voltage-controlled P-channel small-signal switch
- High-density cell design for low RDS(on)
- High saturation current
- Pb-free and halogen-free package
- SOT-23 surface mount package saves board space
- RoHS compliant and AEC-Q101 qualified for automotive and other applications requiring unique site and control change requirements
Applications
The BSS84LT7G is suitable for a variety of low-voltage applications, including high-side switching, load switching, and general-purpose switching. It is particularly useful in automotive, industrial, and consumer electronics where reliable and efficient switching is required.
Q & A
- What is the maximum drain-source voltage of the BSS84LT7G?
The maximum drain-source voltage (VDSS) is -50 V. - What is the continuous drain current rating of the BSS84LT7G?
The continuous drain current (ID) is -0.13 A. - What is the pulsed drain current rating of the BSS84LT7G?
The pulsed drain current (IDM) is -0.52 A. - What is the maximum power dissipation of the BSS84LT7G?
The maximum power dissipation (PD) is 0.36 W. - What is the operating and storage junction temperature range of the BSS84LT7G?
The operating and storage junction temperature range is -55 to +150 °C. - What is the gate threshold voltage of the BSS84LT7G?
The gate threshold voltage (VGS(th)) is between -0.8 and -2 V. - What is the static drain-source on-resistance of the BSS84LT7G?
The static drain-source on-resistance (RDS(on)) is 10 Ω at VGS = -5 V. - Is the BSS84LT7G Pb-free and RoHS compliant?
Yes, the BSS84LT7G is Pb-free and RoHS compliant. - What package type is the BSS84LT7G available in?
The BSS84LT7G is available in a SOT-23 surface mount package. - Is the BSS84LT7G AEC-Q101 qualified?
Yes, the BSS84LT7G is AEC-Q101 qualified for automotive and other applications requiring unique site and control change requirements.
