BSS84LT1
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onsemi BSS84LT1

Manufacturer No:
BSS84LT1
Manufacturer:
onsemi
Package:
Cut Tape (CT)
Description:
MOSFET P-CH 50V 130MA SOT-23
Delivery:
Payment:
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iso45001
iso9001
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Product Introduction

Overview

The BSS84LT1 is a P-channel enhancement mode vertical DMOS transistor produced by onsemi. This device is packaged in a SOT-23 surface mount package, which saves board space and is ideal for small power management circuitry. It is Pb-free and RoHS compliant, making it suitable for a wide range of applications. The BSS84LT1 is known for its low threshold voltage, high-speed switching capabilities, and direct interface to CMOS and Transistor-Transistor Logic (TTL).

Key Specifications

Parameter Symbol Min Typ Max Unit
Drain-to-Source Voltage VDSS -50 - - Vdc
Gate-to-Source Voltage (Continuous) VGS - - ±20 Vdc
Drain Current (Continuous) ID -130 - - mA
Pulsed Drain Current (tp ≤ 10 μs) IDM -520 - - mA
Total Power Dissipation @ TA = 25°C PD - - 225 mW
Operating and Storage Temperature Range TJ -55 to 150 - - °C
Gate-Source Threshold Voltage VGS(th) -0.8 - -2 V
On-Resistance RDS(on) - - 10 Ω

Key Features

  • Low Threshold Voltage: Direct interface to CMOS and Transistor-Transistor Logic (TTL).
  • High-Speed Switching: Suitable for high-speed switching applications.
  • No Secondary Breakdown: Enhances reliability in various operating conditions.
  • Compact Package: SOT-23 surface mount package saves board space.
  • Environmental Compliance: Pb-free and RoHS compliant.
  • AEC-Q101 Qualified: Suitable for automotive and other applications requiring unique site and control change requirements.

Applications

  • Power Management Circuitry: Ideal for use in small power management circuitry due to its low power loss and energy conservation features.
  • Line Current Interrupter in Telephone Sets: Used in telephone sets for line current interruption.
  • Relay and High-Speed Drivers: Suitable for relay, high-speed, and line transformer drivers.
  • Automotive Applications: AEC-Q101 qualified, making it suitable for automotive and other demanding applications.

Q & A

  1. What is the maximum drain-to-source voltage of the BSS84LT1?

    The maximum drain-to-source voltage (VDSS) is -50 Vdc.

  2. What is the continuous drain current rating of the BSS84LT1?

    The continuous drain current (ID) is -130 mA).

  3. What is the total power dissipation of the BSS84LT1 at 25°C?

    The total power dissipation (PD) at 25°C is 225 mW).

  4. Is the BSS84LT1 Pb-free and RoHS compliant?

    Yes, the BSS84LT1 is Pb-free and RoHS compliant).

  5. What is the operating temperature range of the BSS84LT1?

    The operating temperature range is -55°C to 150°C).

  6. What is the gate-source threshold voltage of the BSS84LT1?

    The gate-source threshold voltage (VGS(th)) is between -0.8 V and -2 V).

  7. What package type is the BSS84LT1 available in?

    The BSS84LT1 is available in a SOT-23 surface mount package).

  8. Is the BSS84LT1 suitable for high-speed switching applications?

    Yes, the BSS84LT1 is suitable for high-speed switching applications).

  9. What are some common applications of the BSS84LT1?

    Common applications include power management circuitry, line current interrupters in telephone sets, relay and high-speed drivers, and automotive applications).

  10. Is the BSS84LT1 AEC-Q101 qualified?

    Yes, the BSS84LT1 is AEC-Q101 qualified, making it suitable for automotive and other demanding applications).

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:130mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:30 pF @ 5 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number BSS84LT1 BSS84LT1G
Manufacturer onsemi onsemi
Product Status Obsolete Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V 50 V
Current - Continuous Drain (Id) @ 25°C 130mA (Ta) 130mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) - 5V
Rds On (Max) @ Id, Vgs 10Ohm @ 100mA, 5V 10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) - ±20V
Input Capacitance (Ciss) (Max) @ Vds 30 pF @ 5 V 30 pF @ 5 V
FET Feature - -
Power Dissipation (Max) - 225mW (Ta)
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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