BS108ZL1G
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onsemi BS108ZL1G

Manufacturer No:
BS108ZL1G
Manufacturer:
onsemi
Package:
Cut Tape (CT)
Description:
MOSFET N-CH 200V 250MA TO92-3
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The BS108ZL1G is a logic-level N-Channel MOSFET produced by onsemi. This small signal MOSFET is designed for applications requiring low on-resistance and high switching speeds. Although the product is no longer in active manufacturing, it remains relevant for existing designs and maintenance of older systems.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 200 V
ID (Continuous Drain Current) 250 mA
VGS(th) (Gate Threshold Voltage) 1.0 to 2.5 V
RDS(on) (On-Resistance) 5.0 Ω
PD (Power Dissipation) 625 mW
TJ (Junction Temperature) -55 to 150 °C
Package Type TO-92 -

Key Features

  • Logic Level Gate Drive: The BS108ZL1G can be driven directly from logic ICs, making it suitable for digital control systems.
  • Low On-Resistance: With an RDS(on) of 5.0 Ω, this MOSFET minimizes power losses during switching.
  • High Switching Speeds: Designed for fast switching applications, this MOSFET is ideal for high-frequency operations.
  • Compact TO-92 Package: The TO-92 package is small and versatile, suitable for a variety of board designs.

Applications

  • General Purpose Switching: Suitable for various switching applications in electronic circuits.
  • Power Management: Used in power management circuits where low on-resistance and fast switching are required.
  • Audio and Signal Processing: Can be used in audio and signal processing circuits due to its low noise and high fidelity characteristics.
  • Automotive and Industrial Control Systems: Applicable in automotive and industrial control systems where reliability and efficiency are crucial.

Q & A

  1. What is the maximum drain-source voltage of the BS108ZL1G MOSFET?

    The maximum drain-source voltage (VDS) is 200 V.

  2. What is the continuous drain current rating of the BS108ZL1G?

    The continuous drain current (ID) is 250 mA.

  3. What is the gate threshold voltage range of the BS108ZL1G?

    The gate threshold voltage (VGS(th)) range is from 1.0 to 2.5 V.

  4. What is the typical on-resistance of the BS108ZL1G?

    The typical on-resistance (RDS(on)) is 5.0 Ω.

  5. What package type is the BS108ZL1G available in?

    The BS108ZL1G is available in the TO-92 package.

  6. Is the BS108ZL1G still in active production?

    No, the BS108ZL1G is no longer in active production, but it can be found as a substitute or alternative package type.

  7. What are some common applications of the BS108ZL1G MOSFET?

    Common applications include general purpose switching, power management, audio and signal processing, and automotive and industrial control systems.

  8. What is the junction temperature range of the BS108ZL1G?

    The junction temperature (TJ) range is from -55°C to 150°C.

  9. Can the BS108ZL1G be driven directly from logic ICs?

    Yes, the BS108ZL1G can be driven directly from logic ICs due to its logic level gate drive capability.

  10. What is the power dissipation rating of the BS108ZL1G?

    The power dissipation (PD) rating is 625 mW.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):2V, 2.8V
Rds On (Max) @ Id, Vgs:8Ohm @ 100mA, 2.8V
Vgs(th) (Max) @ Id:1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:150 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):350mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-92 (TO-226)
Package / Case:TO-226-3, TO-92-3 Long Body (Formed Leads)
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Same Series
BS108ZL1G
BS108ZL1G
MOSFET N-CH 200V 250MA TO92-3

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