Overview
The 2SJ652-1EX is a P-Channel Power MOSFET produced by ON Semiconductor. This device is designed for general-purpose switching applications, including motor drives and DC/DC converters. It is known for its low ON-resistance and high-speed switching capabilities, making it suitable for a variety of power management and control systems.
Key Specifications
| Parameter | Symbol | Conditions | Ratings | Unit |
|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | -60 | V | |
| Gate-to-Source Voltage | VGSS | ±20 | V | |
| Drain Current (DC) | ID | -28 | A | |
| Drain Current (Pulse) | IDP | PW≤10μs, duty cycle≤1% | -112 | A |
| Allowable Power Dissipation | PD | Tc=25°C | 30 | W |
| Channel Temperature | Tch | 150 | °C | |
| Storage Temperature | Tstg | -55 to +150 | °C | |
| Static Drain-to-Source On-State Resistance | RDS(on) | ID=14A, VGS=-10V | 28.5 | mΩ |
| Input Capacitance | Ciss | VDS=-20V, f=1MHz | 4360 | pF |
| Output Capacitance | Coss | 470 | pF | |
| Reverse Transfer Capacitance | Crss | 335 | pF | |
| Total Gate Charge | Qg | VDS=-30V, VGS=-10V, ID=-28A | 80 | nC |
| Rise Time | tr | 210 | ns | |
| Turn-OFF Delay Time | td(off) | 310 | ns | |
| Fall Time | tf | 180 | ns |
Key Features
- Low ON-Resistance: The 2SJ652-1EX features a low ON-resistance of 28.5 mΩ (typical) at VGS=-10V and ID=14A, ensuring minimal power loss during operation.
- High-Speed Switching: This MOSFET is designed for ultrahigh-speed switching applications, with rise and fall times of 210 ns and 180 ns, respectively.
- 4V Drive Capability: The device can be driven with a gate voltage as low as 4V, making it compatible with a wide range of control circuits.
- Avalanche Resistance Guarantee: The 2SJ652-1EX has an avalanche energy rating of 343 mJ, providing robust protection against transient voltage spikes.
- High Current Capability: With a maximum drain current of 28 A (DC) and 112 A (pulse), this MOSFET is suitable for high-current applications.
Applications
- Motor Drives: The 2SJ652-1EX is ideal for motor drive applications due to its high current handling and low ON-resistance.
- DC/DC Converters: This MOSFET is well-suited for use in DC/DC converters where high efficiency and fast switching times are critical.
- General-Purpose Switching: Its versatility makes it a good choice for various general-purpose switching applications in power management systems.
Q & A
- What is the maximum drain-to-source voltage of the 2SJ652-1EX?
The maximum drain-to-source voltage (VDSS) is -60 V.
- What is the maximum gate-to-source voltage of the 2SJ652-1EX?
The maximum gate-to-source voltage (VGSS) is ±20 V.
- What is the typical ON-resistance of the 2SJ652-1EX?
The typical ON-resistance (RDS(on)) is 28.5 mΩ at VGS=-10V and ID=14A.
- What is the maximum drain current of the 2SJ652-1EX?
The maximum drain current (ID) is -28 A (DC) and -112 A (pulse).
- What is the package type of the 2SJ652-1EX?
The package type is TO-220F-3SG.
- What are the typical rise and fall times of the 2SJ652-1EX?
The typical rise time (tr) is 210 ns, and the typical fall time (tf) is 180 ns.
- What is the total gate charge of the 2SJ652-1EX?
The total gate charge (Qg) is 80 nC at VDS=-30V, VGS=-10V, and ID=-28A.
- What are the applications of the 2SJ652-1EX?
The 2SJ652-1EX is suitable for motor drives, DC/DC converters, and general-purpose switching applications.
- What is the maximum junction temperature of the 2SJ652-1EX?
The maximum junction temperature (Tj) is 150 °C.
- What is the input capacitance of the 2SJ652-1EX?
The input capacitance (Ciss) is 4360 pF at VDS=-20V and f=1MHz.
