Overview
The PSMN8R5-60YS,115 is a high-performance N-channel MOSFET produced by Nexperia USA Inc. This component is designed to offer superior efficiency and reliability in various power management applications. It is based on the advanced Trench 14 low ohmic split-gate technology, which ensures low on-resistance and high current handling capabilities. The MOSFET is housed in the LFPAK56E package, providing a compact and robust solution for modern electronic designs.
Key Specifications
| Parameter | Value |
|---|---|
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Continuous Drain Current (Id) | 76 A |
| On-Resistance (Rds(on)) | 8 mΩ @ 10 V, 15 A |
| Package | LFPAK56E |
| Gate Threshold Voltage (Vgs(th)) | 4 V @ 1 mA |
| Power Dissipation (Pd) | 106 W |
Key Features
- Low on-resistance (Rds(on)) of 8 mΩ @ 10 V, 15 A, ensuring high efficiency and low power loss.
- High continuous drain current of 76 A, suitable for demanding power applications.
- Standard-level gate drive, making it compatible with a wide range of control circuits.
- Low Q (charge) for higher efficiency and lower spiking, enhancing overall system performance.
- Compact LFPAK56E package, offering a balance between thermal performance and space efficiency.
Applications
The PSMN8R5-60YS,115 MOSFET is versatile and can be used in a variety of applications, including:
- Power supplies and DC-DC converters.
- Motor control and drive systems.
- Automotive electronics, such as battery management and power steering.
- Industrial power management, including inverters and switching power supplies.
- Consumer electronics requiring high power efficiency and reliability.
Q & A
- What is the drain to source voltage (Vdss) of the PSMN8R5-60YS,115 MOSFET?
The drain to source voltage (Vdss) is 60 V. - What is the continuous drain current (Id) of this MOSFET?
The continuous drain current (Id) is 76 A. - What is the on-resistance (Rds(on)) of the PSMN8R5-60YS,115?
The on-resistance (Rds(on)) is 8 mΩ @ 10 V, 15 A. - In what package is the PSMN8R5-60YS,115 MOSFET housed?
The MOSFET is housed in the LFPAK56E package. - What is the gate threshold voltage (Vgs(th)) of this component?
The gate threshold voltage (Vgs(th)) is 4 V @ 1 mA. - What are some typical applications of the PSMN8R5-60YS,115 MOSFET?
Typical applications include power supplies, motor control systems, automotive electronics, industrial power management, and consumer electronics. - What technology is used in the PSMN8R5-60YS,115 MOSFET?
The MOSFET is based on the Trench 14 low ohmic split-gate technology. - What is the power dissipation (Pd) of this MOSFET?
The power dissipation (Pd) is 106 W. - Is the PSMN8R5-60YS,115 MOSFET RoHS compliant?
Yes, the PSMN8R5-60YS,115 MOSFET is RoHS compliant. - What are the benefits of the low Q (charge) in this MOSFET?
The low Q (charge) enhances efficiency and reduces spiking, improving overall system performance.
