PSMN5R6-100PS,127
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Nexperia USA Inc. PSMN5R6-100PS,127

Manufacturer No:
PSMN5R6-100PS,127
Manufacturer:
Nexperia USA Inc.
Package:
Tube
Description:
MOSFET N-CH 100V 100A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PSMN5R6-100PS,127 is a power MOSFET produced by Nexperia USA Inc. This component is part of Nexperia's portfolio of discrete semiconductor products. However, it is important to note that this particular model is scheduled for obsolescence and will be discontinued by the manufacturer.

The PSMN5R6-100PS,127 is designed to handle high power applications, offering robust performance and reliability. Despite its impending discontinuation, it remains a significant component in various existing designs and systems.

Key Specifications

Specification Value
Max Dual Supply Voltage 100 V
Max Operating Temperature 175 °C
Max Power Dissipation 306 W
Min Operating Temperature -55 °C

Key Features

  • High Power Handling: The PSMN5R6-100PS,127 is capable of handling up to 306 W of power dissipation, making it suitable for high-power applications.
  • Wide Temperature Range: It operates within a temperature range of -55 °C to 175 °C, ensuring reliability in various environmental conditions.
  • High Voltage Capability: The component can handle a maximum dual supply voltage of 100 V, which is essential for applications requiring high voltage tolerance.

Applications

  • Power Supplies: Due to its high power handling and voltage capabilities, this MOSFET is often used in power supply units and DC-DC converters.
  • Motor Control: It is suitable for motor control applications where high current and voltage are required.
  • Industrial Automation: The component is used in various industrial automation systems that demand robust and reliable power management.

Q & A

  1. Q: What is the maximum operating temperature of the PSMN5R6-100PS,127?
    A: The maximum operating temperature is 175 °C.
  2. Q: What is the minimum operating temperature of the PSMN5R6-100PS,127?
    A: The minimum operating temperature is -55 °C.
  3. Q: What is the maximum power dissipation of the PSMN5R6-100PS,127?
    A: The maximum power dissipation is 306 W.
  4. Q: Is the PSMN5R6-100PS,127 still in production?
    A: No, this component is scheduled for obsolescence and will be discontinued by the manufacturer.
  5. Q: What are some common applications of the PSMN5R6-100PS,127?
    A: Common applications include power supplies, motor control, and industrial automation systems.
  6. Q: What is the maximum dual supply voltage of the PSMN5R6-100PS,127?
    A: The maximum dual supply voltage is 100 V.
  7. Q: Where can I find detailed specifications for the PSMN5R6-100PS,127?
    A: Detailed specifications can be found in the datasheet available on the manufacturer's website or through distributors like Mouser and Digi-Key.
  8. Q: Are there any substitutes available for the PSMN5R6-100PS,127?
    A: Yes, there are substitutes available, such as the AOB286L, which can be considered for new designs.
  9. Q: Why is the PSMN5R6-100PS,127 being discontinued?
    A: The reason for discontinuation is typically due to the introduction of newer, more efficient models or changes in market demand.
  10. Q: Can I still purchase the PSMN5R6-100PS,127?
    A: While it is scheduled for obsolescence, it may still be available from some distributors until stock is depleted.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:141 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8061 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):306W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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In Stock

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Similar Products

Part Number PSMN5R6-100PS,127 PSMN5R6-100XS,127 PSMN5R0-100PS,127
Manufacturer Nexperia USA Inc. NXP USA Inc. Nexperia USA Inc.
Product Status Active Obsolete Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 61.8A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 5.6mOhm @ 25A, 10V 5.6mOhm @ 15A, 10V 5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 141 nC @ 10 V 145 nC @ 10 V 170 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 8061 pF @ 50 V 8061 pF @ 50 V 9900 pF @ 50 V
FET Feature - - -
Power Dissipation (Max) 306W (Tc) 60W (Tc) 338W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB TO-220F TO-220AB
Package / Case TO-220-3 TO-220-3 Full Pack, Isolated Tab TO-220-3

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