PSMN2R4-30MLDX
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Nexperia USA Inc. PSMN2R4-30MLDX

Manufacturer No:
PSMN2R4-30MLDX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 70A LFPAK33
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PSMN2R4-30MLDX is a high-performance MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) manufactured by Nexperia USA Inc. This device is part of the LFPAK33 package series, known for its compact size and high power density. The PSMN2R4-30MLDX is designed to offer low on-state resistance, high current handling, and excellent thermal performance, making it suitable for a variety of power management and switching applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)30 V
VGS (Gate-Source Voltage)±20 V
ID (Continuous Drain Current)60 A
RDS(on) (On-State Resistance)2.4 mΩ
Ptot (Total Power Dissipation)200 W
TJ (Junction Temperature)-55 to 175 °C
PackageLFPAK33

Key Features

  • Low on-state resistance (RDS(on)) of 2.4 mΩ
  • High continuous drain current (ID) of 60 A;
  • Compact LFPAK33 package for high power density;
  • Excellent thermal performance;
  • RoHS compliant;
  • High reliability and durability.

Applications

The PSMN2R4-30MLDX MOSFET is suitable for various applications including but not limited to:

  • Power management in automotive systems;
  • Switching power supplies;
  • Motor control and drive systems;
  • High-frequency switching applications;
  • Industrial power conversion.

Q & A

  1. What is the maximum drain-source voltage of the PSMN2R4-30MLDX? The maximum drain-source voltage is 30 V.
  2. What is the on-state resistance of the PSMN2R4-30MLDX? The on-state resistance is 2.4 mΩ.
  3. What is the continuous drain current rating of the PSMN2R4-30MLDX? The continuous drain current rating is 60 A.
  4. What package type is used for the PSMN2R4-30MLDX? The PSMN2R4-30MLDX uses the LFPAK33 package.
  5. Is the PSMN2R4-30MLDX RoHS compliant? Yes, the PSMN2R4-30MLDX is RoHS compliant.
  6. What is the junction temperature range for the PSMN2R4-30MLDX? The junction temperature range is -55 to 175 °C.
  7. What are some common applications for the PSMN2R4-30MLDX? Common applications include power management in automotive systems, switching power supplies, motor control, and high-frequency switching applications.
  8. Where can I find detailed specifications for the PSMN2R4-30MLDX? Detailed specifications can be found in the datasheet available on the Nexperia website or through authorized distributors like Mouser and Digi-Key.
  9. What is the total power dissipation rating for the PSMN2R4-30MLDX? The total power dissipation rating is 200 W.
  10. Is the PSMN2R4-30MLDX suitable for high-frequency switching applications? Yes, it is suitable for high-frequency switching applications due to its low on-state resistance and high current handling capabilities.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:70A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:51 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3264 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):91W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK33
Package / Case:SOT-1210, 8-LFPAK33 (5-Lead)
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Similar Products

Part Number PSMN2R4-30MLDX PSMN2R4-30YLDX
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 70A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.4mOhm @ 25A, 10V 2.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.2V @ 1mA 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 51 nC @ 10 V 31.3 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3264 pF @ 15 V 2256 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 91W (Tc) 106W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package LFPAK33 LFPAK56, Power-SO8
Package / Case SOT-1210, 8-LFPAK33 (5-Lead) SC-100, SOT-669

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