Overview
The Nexperia PSMN1R2-25YLC,115 is a high-performance N-Channel MOSFET designed for efficient power management in various electronic systems. This device is part of Nexperia's Advanced TrenchMOS technology, which offers low RDSon and low gate charge, leading to high efficiency gains in switching power converters. The MOSFET is packaged in a 4-pin LFPAK (SOT-669) and is suitable for surface mount applications.
Key Specifications
| Parameter | Value |
|---|---|
| Brand | Nexperia |
| Channel Type | N-Channel |
| Maximum Continuous Drain Current | 100 A |
| Maximum Drain Source Voltage | 25 V |
| Package Type | LFPAK, SOT-669 |
| Mounting Type | Surface Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 1.7 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1.95 V |
| Minimum Gate Threshold Voltage | 1.05 V |
| Maximum Power Dissipation | 179 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Width | 4.1 mm |
| Transistor Material | Silicon (Si) |
| Typical Gate Charge @ Vgs | 66 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +175 °C |
| Length | 5 mm |
| Height | 1.1 mm |
| Minimum Operating Temperature | -55 °C |
Key Features
- Advanced TrenchMOS Technology: Offers low RDSon and low gate charge, enhancing efficiency in switching power converters.
- High Current Handling: Capable of handling a maximum continuous drain current of 100 A.
- Low On-Resistance: Maximum drain source resistance of 1.7 mΩ.
- Enhancement Mode: Operates in enhancement mode, providing better control over the channel.
- Compact Packaging: Packaged in a 4-pin LFPAK (SOT-669), suitable for surface mount applications.
- Wide Operating Temperature Range: Operates from -55 °C to +175 °C.
- High Power Dissipation: Maximum power dissipation of 179 W.
Applications
- Switching Power Converters: Ideal for use in high-efficiency switching power converters due to its low RDSon and gate charge.
- Power Management Systems: Suitable for various power management systems requiring high current handling and low on-resistance.
- Automotive Systems: Can be used in automotive applications where high reliability and robust performance are necessary.
- Industrial Power Supplies: Applicable in industrial power supplies where efficiency and reliability are critical.
Q & A
- What is the maximum continuous drain current of the PSMN1R2-25YLC,115 MOSFET?
The maximum continuous drain current is 100 A.
- What is the maximum drain source voltage of this MOSFET?
The maximum drain source voltage is 25 V.
- What type of packaging does the PSMN1R2-25YLC,115 use?
The MOSFET is packaged in a 4-pin LFPAK (SOT-669).
- What is the typical gate charge at Vgs = 10 V for this MOSFET?
The typical gate charge at Vgs = 10 V is 66 nC.
- What is the maximum operating temperature of the PSMN1R2-25YLC,115?
The maximum operating temperature is +175 °C.
- What is the minimum operating temperature of this MOSFET?
The minimum operating temperature is -55 °C.
- What is the maximum power dissipation of the PSMN1R2-25YLC,115?
The maximum power dissipation is 179 W.
- Is the PSMN1R2-25YLC,115 RoHS compliant?
Yes, the PSMN1R2-25YLC,115 is RoHS compliant.
- What is the channel mode of operation for this MOSFET?
The channel mode of operation is enhancement mode.
- What is the maximum gate source voltage for the PSMN1R2-25YLC,115?
The maximum gate source voltage is -20 V to +20 V.
- What are some common applications for the PSMN1R2-25YLC,115 MOSFET?
Common applications include switching power converters, power management systems, automotive systems, and industrial power supplies.
