Overview
The PSMN1R1-25YLC,115 is a high-performance N-channel enhancement mode MOSFET produced by Nexperia USA Inc. This component is part of Nexperia's extensive portfolio of discrete semiconductor products and is designed using NextPower technology. It is housed in the LFPAK56 (Power-SO8) package, which is known for its compact size and high power density. The MOSFET is optimized for use in a wide range of industrial, communications, and consumer applications, offering excellent efficiency and reliability.
Key Specifications
| Parameter | Value |
|---|---|
| Type number | PSMN1R1-25YLC |
| Package | LFPAK56; Power-SO8 (SOT669) |
| Channel type | N-channel |
| V DS [max] (V) | 25 |
| R DSon [max] @ V GS = 10 V (mΩ) | 1.15 |
| R DSon [max] @ V GS = 4.5 V; @25 C (mΩ) | 1.5 |
| T j [max] (°C) | 175 |
| I D [max] (A) | 100 |
| P tot [max] (W) | 215 |
| Q GD [typ] (nC) | 11 |
| Q G(tot) [typ] @ V GS = 4.5 V (nC) | 39 |
| Q G(tot) [typ] @ V GS = 10 V (nC) | 83 |
| V GSth [typ] (V) | 1.43 |
| Automotive qualified | No |
| C iss [typ] (pF) | 5287 |
| C oss [typ] (pF) | 1121 |
Key Features
- Logic level enhancement mode N-channel MOSFET
- NextPower technology for high efficiency and reliability
- Compact LFPAK56 (Power-SO8) package
- Low on-state resistance (R DSon) of 1.15 mΩ at V GS = 10 V and 1.5 mΩ at V GS = 4.5 V
- High current capability of up to 100 A
- High power dissipation of up to 215 W
- Low threshold voltage (V GSth) of 1.43 V
- High junction temperature rating of up to 175°C
Applications
The PSMN1R1-25YLC,115 MOSFET is versatile and can be used in a variety of applications, including:
- Industrial control systems
- Communications equipment
- Consumer electronics
- Automotive systems (though not automotive qualified)
- Power supplies and DC-DC converters
- Motor control and drive systems
Q & A
- What is the maximum drain-source voltage (V DS) of the PSMN1R1-25YLC,115 MOSFET?
The maximum drain-source voltage (V DS) is 25 V. - What is the on-state resistance (R DSon) at V GS = 10 V?
The on-state resistance (R DSon) at V GS = 10 V is 1.15 mΩ. - What is the maximum current (I D) rating of the MOSFET?
The maximum current (I D) rating is 100 A. - What is the maximum power dissipation (P tot) of the MOSFET?
The maximum power dissipation (P tot) is 215 W. - What package type is used for the PSMN1R1-25YLC,115 MOSFET?
The MOSFET is housed in the LFPAK56 (Power-SO8) package. - Is the PSMN1R1-25YLC,115 MOSFET automotive qualified?
No, the PSMN1R1-25YLC,115 MOSFET is not automotive qualified. - What is the typical threshold voltage (V GSth) of the MOSFET?
The typical threshold voltage (V GSth) is 1.43 V. - What are the typical gate-source and gate-drain capacitances (C iss and C oss)?
The typical input capacitance (C iss) is 5287 pF, and the typical output capacitance (C oss) is 1121 pF. - What is the maximum junction temperature (T j) rating of the MOSFET?
The maximum junction temperature (T j) rating is 175°C. - Where can I find detailed datasheets and technical support for the PSMN1R1-25YLC,115 MOSFET?
Detailed datasheets and technical support can be found on the Nexperia website or through local Nexperia sales offices.
