PSMN1R2-25YL,115
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Nexperia USA Inc. PSMN1R2-25YL,115

Manufacturer No:
PSMN1R2-25YL,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 25V 100A LFPAK56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PSMN1R2-25YL,115 is a high-performance N-channel MOSFET produced by Nexperia USA Inc. This device is part of Nexperia's NextPower technology series, designed to offer superior efficiency and reliability in various power management applications. The MOSFET features a drain-source breakdown voltage (Vds) of 25V and a continuous drain current (Id) of 100A, making it suitable for demanding power switching and control tasks.

Key Specifications

ParameterValue
Drain-Source Breakdown Voltage (Vds)25 V
Continuous Drain Current (Id)100 A
Drain-Source On Resistance (Rds On)1.2 mΩ
Gate-Source Voltage (Vgs)±20 V
PackageSOT-1023, 4-LFPAK
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)

Key Features

  • High continuous drain current of 100A, ensuring robust performance in power-intensive applications.
  • Low drain-source on resistance (Rds On) of 1.2 mΩ, minimizing power losses and enhancing efficiency.
  • NextPower technology for improved thermal performance and reliability.
  • Logic level gate drive, allowing for easy integration with standard logic circuits.
  • ROHS3 compliant and halogen-free, meeting environmental and safety standards.

Applications

The PSMN1R2-25YL,115 MOSFET is designed for use in a variety of high-power applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive systems, such as battery management and power steering.
  • Industrial power management and control systems.
  • Renewable energy systems, including solar and wind power.

Q & A

  1. What is the maximum drain-source breakdown voltage of the PSMN1R2-25YL,115?
    The maximum drain-source breakdown voltage (Vds) is 25 V.
  2. What is the continuous drain current rating of this MOSFET?
    The continuous drain current (Id) is 100 A.
  3. What is the typical drain-source on resistance (Rds On) of this device?
    The typical drain-source on resistance (Rds On) is 1.2 mΩ.
  4. What package type is used for the PSMN1R2-25YL,115?
    The package type is SOT-1023, 4-LFPAK.
  5. Is the PSMN1R2-25YL,115 ROHS compliant?
    Yes, it is ROHS3 compliant.
  6. What is the moisture sensitivity level (MSL) of this component?
    The moisture sensitivity level (MSL) is 1 (Unlimited).
  7. What technology is used in this MOSFET?
    This MOSFET uses Nexperia's NextPower technology.
  8. What are some typical applications for the PSMN1R2-25YL,115?
    Typical applications include power supplies, motor control, automotive systems, industrial power management, and renewable energy systems.
  9. Is the PSMN1R2-25YL,115 halogen-free?
    Yes, it is halogen-free according to Nexperia's halogen-free definition.
  10. What is the gate-source voltage range for this MOSFET?
    The gate-source voltage range is ±20 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:105 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6380 pF @ 12 V
FET Feature:- 
Power Dissipation (Max):121W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56; Power-SO8
Package / Case:SOT-1023, 4-LFPAK
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Similar Products

Part Number PSMN1R2-25YL,115 PSMN1R5-25YL,115 PSMN1R2-25YLC,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Obsolete Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 25 V 25 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 100A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.2mOhm @ 15A, 10V 1.5mOhm @ 15A, 10V 1.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA 2.15V @ 1mA 1.95V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 105 nC @ 10 V 76 nC @ 10 V 66 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6380 pF @ 12 V 4830 pF @ 12 V 4173 pF @ 12 V
FET Feature - - -
Power Dissipation (Max) 121W (Tc) 109W (Tc) 179W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package LFPAK56; Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8
Package / Case SOT-1023, 4-LFPAK SC-100, SOT-669 SC-100, SOT-669

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