PSMN1R2-25YL,115
  • Share:

Nexperia USA Inc. PSMN1R2-25YL,115

Manufacturer No:
PSMN1R2-25YL,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 25V 100A LFPAK56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PSMN1R2-25YL,115 is a high-performance N-channel MOSFET produced by Nexperia USA Inc. This device is part of Nexperia's NextPower technology series, designed to offer superior efficiency and reliability in various power management applications. The MOSFET features a drain-source breakdown voltage (Vds) of 25V and a continuous drain current (Id) of 100A, making it suitable for demanding power switching and control tasks.

Key Specifications

ParameterValue
Drain-Source Breakdown Voltage (Vds)25 V
Continuous Drain Current (Id)100 A
Drain-Source On Resistance (Rds On)1.2 mΩ
Gate-Source Voltage (Vgs)±20 V
PackageSOT-1023, 4-LFPAK
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)

Key Features

  • High continuous drain current of 100A, ensuring robust performance in power-intensive applications.
  • Low drain-source on resistance (Rds On) of 1.2 mΩ, minimizing power losses and enhancing efficiency.
  • NextPower technology for improved thermal performance and reliability.
  • Logic level gate drive, allowing for easy integration with standard logic circuits.
  • ROHS3 compliant and halogen-free, meeting environmental and safety standards.

Applications

The PSMN1R2-25YL,115 MOSFET is designed for use in a variety of high-power applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive systems, such as battery management and power steering.
  • Industrial power management and control systems.
  • Renewable energy systems, including solar and wind power.

Q & A

  1. What is the maximum drain-source breakdown voltage of the PSMN1R2-25YL,115?
    The maximum drain-source breakdown voltage (Vds) is 25 V.
  2. What is the continuous drain current rating of this MOSFET?
    The continuous drain current (Id) is 100 A.
  3. What is the typical drain-source on resistance (Rds On) of this device?
    The typical drain-source on resistance (Rds On) is 1.2 mΩ.
  4. What package type is used for the PSMN1R2-25YL,115?
    The package type is SOT-1023, 4-LFPAK.
  5. Is the PSMN1R2-25YL,115 ROHS compliant?
    Yes, it is ROHS3 compliant.
  6. What is the moisture sensitivity level (MSL) of this component?
    The moisture sensitivity level (MSL) is 1 (Unlimited).
  7. What technology is used in this MOSFET?
    This MOSFET uses Nexperia's NextPower technology.
  8. What are some typical applications for the PSMN1R2-25YL,115?
    Typical applications include power supplies, motor control, automotive systems, industrial power management, and renewable energy systems.
  9. Is the PSMN1R2-25YL,115 halogen-free?
    Yes, it is halogen-free according to Nexperia's halogen-free definition.
  10. What is the gate-source voltage range for this MOSFET?
    The gate-source voltage range is ±20 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:105 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6380 pF @ 12 V
FET Feature:- 
Power Dissipation (Max):121W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56; Power-SO8
Package / Case:SOT-1023, 4-LFPAK
0 Remaining View Similar

In Stock

$2.70
77

Please send RFQ , we will respond immediately.

Similar Products

Part Number PSMN1R2-25YL,115 PSMN1R5-25YL,115 PSMN1R2-25YLC,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Obsolete Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 25 V 25 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 100A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.2mOhm @ 15A, 10V 1.5mOhm @ 15A, 10V 1.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA 2.15V @ 1mA 1.95V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 105 nC @ 10 V 76 nC @ 10 V 66 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6380 pF @ 12 V 4830 pF @ 12 V 4173 pF @ 12 V
FET Feature - - -
Power Dissipation (Max) 121W (Tc) 109W (Tc) 179W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package LFPAK56; Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8
Package / Case SOT-1023, 4-LFPAK SC-100, SOT-669 SC-100, SOT-669

Related Product By Categories

STB170NF04
STB170NF04
STMicroelectronics
MOSFET N-CH 40V 80A D2PAK
STD36P4LLF6
STD36P4LLF6
STMicroelectronics
MOSFET P-CH 40V 36A DPAK
NTMFS5C460NLT1G
NTMFS5C460NLT1G
onsemi
MOSFET N-CH 40V 5DFN
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
STD60NF06T4
STD60NF06T4
STMicroelectronics
MOSFET N-CH 60V 60A DPAK
STL220N6F7
STL220N6F7
STMicroelectronics
MOSFET N-CH 60V 120A POWERFLAT
STF28N65M2
STF28N65M2
STMicroelectronics
MOSFET N-CH 650V 20A TO220FP
2N7002AQ-13
2N7002AQ-13
Diodes Incorporated
MOSFET N-CH 60V 180MA SOT23
STH150N10F7-2
STH150N10F7-2
STMicroelectronics
MOSFET N-CH 100V 110A H2PAK-2
FDMA6676PZ
FDMA6676PZ
onsemi
MOSFET P-CH 30V 11A 6MICROFET
MTB30P06VT4G
MTB30P06VT4G
onsemi
MOSFET P-CH 60V 30A D2PAK
NTTFS4939NTAG
NTTFS4939NTAG
onsemi
MOSFET N-CH 30V 8.9A/52A 8WDFN

Related Product By Brand

PRTR5V0U2X,215
PRTR5V0U2X,215
Nexperia USA Inc.
TVS DIODE 5.5VWM SOT143B
BAT854SW,115
BAT854SW,115
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 40V SOT323
BAS21,235
BAS21,235
Nexperia USA Inc.
DIODE GEN PURP 200V 200MA SOT23
1PS79SB40,699
1PS79SB40,699
Nexperia USA Inc.
DIODE SCHOTTKY 40V 120MA SOD523
BZX84-C36,235
BZX84-C36,235
Nexperia USA Inc.
DIODE ZENER 36V 250MW TO236AB
BZV55-C33,115
BZV55-C33,115
Nexperia USA Inc.
DIODE ZENER 33V 500MW LLDS
BCP56-10TX
BCP56-10TX
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
PBSS5540Z,115
PBSS5540Z,115
Nexperia USA Inc.
TRANS PNP 40V 5A SOT223
BCP52-10TF
BCP52-10TF
Nexperia USA Inc.
BCP52-10T/SOT223/SC-73
BC857-QR
BC857-QR
Nexperia USA Inc.
TRANS PNP 45V 0.1A TO236AB
BUK9212-55B,118
BUK9212-55B,118
Nexperia USA Inc.
MOSFET N-CH 55V 75A DPAK
74ABT16245BDGG,112
74ABT16245BDGG,112
Nexperia USA Inc.
IC TXRX NON-INVERT 5.5V 48TSSOP