Overview
The PSMN018-80YS,115 is a standard level N-channel MOSFET produced by Nexperia USA Inc. This component is designed and qualified for use in a wide range of industrial, communications, and domestic equipment. It features the Advanced TrenchMOS technology, which provides low RDSon and low gate charge, making it highly efficient in switching power converters. The MOSFET is packaged in the LFPAK (Power SO8) package, which offers maximum power density.
Key Specifications
| Parameter | Conditions | Min | Max | Unit | |
|---|---|---|---|---|---|
| VDS (Drain-Source Voltage) | Tj ≥ 25 °C; Tj ≤ 175 °C | - | - | 80 | V |
| ID (Drain Current) | Tmb = 25 °C; VGS = 10 V | - | - | 45 | A |
| Ptot (Total Power Dissipation) | Tmb = 25 °C | - | - | 89 | W |
| Tj (Junction Temperature) | - | -55 | - | 175 | °C |
| RDSon (Drain-Source On-State Resistance) | VGS = 10 V; ID = 5 A; Tj = 25 °C | - | 15 | 18 | mΩ |
| VGS(th) (Gate-Source Threshold Voltage) | ID = 1 mA; VDS = VGS; Tj = 25 °C | 1 | - | - | V |
| Package | - | - | - | LFPAK (Power SO8), SOT-669 | - |
Key Features
- Advanced TrenchMOS Technology: Provides low RDSon and low gate charge, enhancing efficiency in switching power converters.
- High Efficiency: Gains in switching power converters due to low RDSon and gate charge.
- Improved Mechanical and Thermal Characteristics: The LFPAK package offers maximum power density and improved thermal management.
- Wide Operating Temperature Range: Qualified to operate from -55 °C to 175 °C.
- Surface Mount Package: SC-100, SOT-669 package for easy integration into surface mount designs.
Applications
- DC-to-DC Converters: Ideal for high-efficiency power conversion.
- Lithium-ion Battery Protection: Used in battery management systems for lithium-ion batteries.
- Load Switching: Suitable for applications requiring high current switching.
- Motor Control: Used in motor control circuits for efficient and reliable operation.
- Server Power Supplies: Employed in server power supplies to ensure high efficiency and reliability.
Q & A
- What is the maximum drain-source voltage (VDS) of the PSMN018-80YS,115 MOSFET?
The maximum drain-source voltage (VDS) is 80 V.
- What is the maximum continuous drain current (ID) of this MOSFET?
The maximum continuous drain current (ID) is 45 A at Tmb = 25 °C and VGS = 10 V.
- What is the total power dissipation (Ptot) of the PSMN018-80YS,115?
The total power dissipation (Ptot) is 89 W at Tmb = 25 °C.
- What is the junction temperature range of this MOSFET?
The junction temperature range is from -55 °C to 175 °C.
- What is the typical drain-source on-state resistance (RDSon) of the PSMN018-80YS,115?
The typical drain-source on-state resistance (RDSon) is 15 mΩ at VGS = 10 V, ID = 5 A, and Tj = 25 °C.
- What package type is used for the PSMN018-80YS,115 MOSFET?
The package type is LFPAK (Power SO8), SOT-669.
- What are some of the key applications of the PSMN018-80YS,115 MOSFET?
Key applications include DC-to-DC converters, lithium-ion battery protection, load switching, motor control, and server power supplies.
- What is the gate-source threshold voltage (VGS(th)) of this MOSFET?
The gate-source threshold voltage (VGS(th)) is typically 1 V at ID = 1 mA and Tj = 25 °C.
- What are the benefits of the Advanced TrenchMOS technology in this MOSFET?
The Advanced TrenchMOS technology provides low RDSon and low gate charge, leading to high efficiency gains in switching power converters.
- Is the PSMN018-80YS,115 suitable for high-temperature applications?
Yes, it is qualified to operate from -55 °C to 175 °C.
