Overview
The PSMN013-80YS,115 is a high-performance N-channel MOSFET produced by Nexperia USA Inc. This device is part of Nexperia's extensive range of power MOSFETs, designed to offer high efficiency and reliability in various power management applications. The MOSFET is based on the Trench 14 low ohmic split-gate technology, which enhances its electrical characteristics and reduces energy losses.
Key Specifications
| Parameter | Value |
|---|---|
| VDS (Drain-Source Voltage) | 80 V |
| ID (Continuous Drain Current at Tc) | 60 A |
| RDS(on) (Drain-Source On-Resistance) | 12.9 mΩ |
| Ptot (Total Power Dissipation at Tc) | 106 W |
| Package | LFPAK56E (Power-SO8) |
Key Features
- Low on-resistance (RDS(on)) of 12.9 mΩ, enhancing efficiency and reducing power losses.
- High continuous drain current (ID) of 60 A, suitable for high-power applications.
- Standard-level gate drive, making it compatible with a wide range of gate drive circuits.
- Low Qg (gate charge) for higher efficiency and lower spiking.
- Housed in the LFPAK56E package, which offers a compact footprint and excellent thermal performance.
Applications
The PSMN013-80YS,115 MOSFET is suitable for a variety of applications, including:
- Power supplies and DC-DC converters.
- Motor drives and control systems.
- Automotive electronics, such as battery management and power steering systems.
- Industrial power systems, including UPS and motor control.
- Renewable energy systems, such as solar and wind power inverters.
Q & A
- What is the maximum drain-source voltage of the PSMN013-80YS,115 MOSFET?
The maximum drain-source voltage (VDS) is 80 V. - What is the continuous drain current rating of this MOSFET?
The continuous drain current (ID) at Tc is 60 A. - What is the on-resistance (RDS(on)) of this device?
The on-resistance (RDS(on)) is 12.9 mΩ. - In what package is the PSMN013-80YS,115 MOSFET available?
The MOSFET is housed in the LFPAK56E (Power-SO8) package. - What technology is used in the PSMN013-80YS,115 MOSFET?
The device is based on the Trench 14 low ohmic split-gate technology. - What are some typical applications for this MOSFET?
Typical applications include power supplies, motor drives, automotive electronics, industrial power systems, and renewable energy systems. - What is the total power dissipation (Ptot) at Tc for this MOSFET?
The total power dissipation (Ptot) at Tc is 106 W. - Is the PSMN013-80YS,115 MOSFET suitable for high-frequency applications?
Yes, due to its low Qg and high efficiency, it is suitable for high-frequency applications. - Does the PSMN013-80YS,115 meet any automotive standards?
While this specific part may not be explicitly listed as AEC-Q100/Q101 qualified, Nexperia offers a range of automotive-qualified devices; it is advisable to check the specific qualification status for this part. - Where can I find detailed technical documentation for the PSMN013-80YS,115?
Detailed technical documentation, including datasheets and application notes, can be found on Nexperia's official website and through distributors like Digi-Key and Mouser Electronics.
