PMV32UP/MIR
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Nexperia USA Inc. PMV32UP/MIR

Manufacturer No:
PMV32UP/MIR
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 4A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMV32UP is a P-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This MOSFET is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, utilizing Trench MOSFET technology. It is designed to offer high performance and efficiency in various electronic applications. With its low drain-source on-state resistance and very fast switching capabilities, the PMV32UP is suitable for a range of uses, from relay drivers and high-speed line drivers to high-side load switches and switching circuits.

Key Specifications

Parameter Conditions Min Typ Max Unit
VDS (drain-source voltage) Tj = 25 °C - - -20 V
VGS (gate-source voltage) - -8 - 8 V
ID (drain current) VGS = -4.5 V; Tamb = 25 °C - - -4 A
RDSon (drain-source on-state resistance) VGS = -4.5 V; ID = -2.4 A; Tj = 25 °C - 32 36
Tj (junction temperature) - - - 150 °C
VGSth (gate-source threshold voltage) ID = -250 µA; VDS = VGS; Tj = 25 °C -0.45 -0.7 -0.95 V

Key Features

  • 1.8 V drain-source on-state resistance rated
  • Very fast switching
  • Trench MOSFET technology for high efficiency and reliability
  • Small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package
  • High-side load switch and relay driver capabilities
  • High-speed line driver and switching circuits applications

Applications

  • Relay driver
  • High-speed line driver
  • High-side load switch
  • Switching circuits
  • Various industrial, automotive, and consumer electronics applications

Q & A

  1. What is the PMV32UP MOSFET?

    The PMV32UP is a P-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 package, using Trench MOSFET technology.

  2. What are the key specifications of the PMV32UP?

    Key specifications include a maximum drain-source voltage of -20 V, a maximum drain current of -4 A, and a drain-source on-state resistance of 36 mΩ at VGS = -4.5 V.

  3. What are the typical applications of the PMV32UP?

    Typical applications include relay drivers, high-speed line drivers, high-side load switches, and switching circuits.

  4. What is the package type of the PMV32UP?

    The PMV32UP is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

  5. What is the maximum junction temperature for the PMV32UP?

    The maximum junction temperature is 150 °C.

  6. Is the PMV32UP RoHS compliant?
  7. What is the gate-source threshold voltage of the PMV32UP?

    The gate-source threshold voltage is typically -0.7 V at ID = -250 µA and Tj = 25 °C.

  8. How does the PMV32UP perform in terms of switching speed?

    The PMV32UP is known for its very fast switching capabilities.

  9. Can the PMV32UP be used in automotive applications?
  10. Where can I purchase the PMV32UP?

    The PMV32UP can be purchased from various distributors such as Mouser Electronics, Digi-Key, and other authorized distributors of Nexperia products.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:36mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id:950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15.5 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:1890 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):510mW (Ta), 4.15W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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RET
PMV32UP/MIR
PMV32UP/MIR
MOSFET P-CH 20V 4A TO236AB

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