PBHV9050Z/ZLF
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Nexperia USA Inc. PBHV9050Z/ZLF

Manufacturer No:
PBHV9050Z/ZLF
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PNP 500V 0.25A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PBHV9050Z/ZLF is a high-voltage, low VCEsat (BISS) PNP transistor manufactured by Nexperia USA Inc. This transistor is designed to operate at high voltages and offers several key benefits, including low collector-emitter saturation voltage, high collector current capability, and high collector current gain (hFE). It is packaged in the SOT223 (SC-73) package, making it suitable for surface mount applications.

Key Specifications

Parameter Value Unit
Voltage - Collector Emitter Breakdown (Max) 500 V
Current - Collector (Ic) (Max) 250 mA
Vce Saturation (Max) @ Ib, Ic 200 mV @ 20 mA, 100 mA mV
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 100 mA, 10 V -
Power - Max 1.5 W
Operating Temperature (TJ) 150 °C
Frequency - Transition 55 MHz
Package / Case SOT223 (SC-73) -
Mounting Type Surface Mount -

Key Features

  • High voltage operation up to 500 V
  • Low collector-emitter saturation voltage (VCEsat) for reduced power losses
  • High collector current capability of up to 250 mA
  • High collector current gain (hFE) for improved switching performance
  • Surface mount SOT223 (SC-73) package for easy integration into modern designs
  • High operating temperature up to 150°C (TJ)

Applications

  • Power switching and amplification in high-voltage applications
  • Industrial control systems
  • Automotive systems requiring high reliability and performance
  • Consumer electronics where high voltage and low power loss are critical
  • General-purpose high-voltage switching and amplification

Q & A

  1. What is the maximum collector-emitter breakdown voltage of the PBHV9050Z/ZLF transistor?

    The maximum collector-emitter breakdown voltage is 500 V.

  2. What is the maximum collector current (Ic) of the PBHV9050Z/ZLF transistor?

    The maximum collector current is 250 mA.

  3. What is the typical VCEsat of the PBHV9050Z/ZLF transistor?

    The typical VCEsat is 200 mV at 20 mA and 100 mA collector current.

  4. What is the minimum DC current gain (hFE) of the PBHV9050Z/ZLF transistor?

    The minimum DC current gain (hFE) is 80 at 100 mA collector current and 10 V collector-emitter voltage.

  5. What is the maximum power dissipation of the PBHV9050Z/ZLF transistor?

    The maximum power dissipation is 1.5 W.

  6. What is the operating temperature range of the PBHV9050Z/ZLF transistor?

    The operating temperature range is up to 150°C (TJ).

  7. What package type is the PBHV9050Z/ZLF transistor available in?

    The transistor is available in the SOT223 (SC-73) package.

  8. Is the PBHV9050Z/ZLF transistor suitable for surface mount applications?

    Yes, it is suitable for surface mount applications.

  9. What are some common applications of the PBHV9050Z/ZLF transistor?

    Common applications include power switching, industrial control systems, automotive systems, and consumer electronics requiring high voltage and low power loss.

  10. What is the transition frequency of the PBHV9050Z/ZLF transistor?

    The transition frequency is 55 MHz.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):250 mA
Voltage - Collector Emitter Breakdown (Max):500 V
Vce Saturation (Max) @ Ib, Ic:350mV @ 20mA, 100mA
Current - Collector Cutoff (Max):100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 10V
Power - Max:700 mW
Frequency - Transition:50MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223
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Similar Products

Part Number PBHV9050Z/ZLF PBHV9050Z/ZLX PBHV9040Z/ZLF
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Obsolete Obsolete Obsolete
Transistor Type PNP PNP PNP
Current - Collector (Ic) (Max) 250 mA 250 mA 250 mA
Voltage - Collector Emitter Breakdown (Max) 500 V 500 V 400 V
Vce Saturation (Max) @ Ib, Ic 350mV @ 20mA, 100mA 350mV @ 20mA, 100mA 200mV @ 20mA, 100mA
Current - Collector Cutoff (Max) 100nA 100nA 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 10V 80 @ 50mA, 10V 100 @ 50mA, 10V
Power - Max 700 mW 700 mW 1.4 W
Frequency - Transition 50MHz 50MHz 55MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223 SOT-223 SOT-223

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