Overview
The PBSS4350Z/ZLF is a 50 V low VCEsat NPN transistor manufactured by Nexperia USA Inc. This transistor is housed in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. It is designed to offer high efficiency and reliability in various power management applications. The PBSS4350Z/ZLF is part of Nexperia's extensive portfolio of discrete semiconductors, which are widely used across automotive, industrial, power, computing, consumer, mobile, and wearable devices.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Type Number | PBSS4350Z | - |
Package | SOT223 (SC-73) | - |
Collector-Emitter Voltage (VCEO) | 50 | V |
Collector Current (IC) | 3000 | mA |
Collector-Emitter Saturation Voltage (VCEsat) | 370 mV @ 300 mA, 3 A | mV |
DC Current Gain (hFE) | 200 (min) @ IC = 1 A, VCE = 2 V | - |
Junction Temperature (TJ) | 150 | °C |
Transition Frequency (fT) | 100 | MHz |
Power Dissipation (Ptot) | 1350 | mW |
Key Features
- Low collector-emitter saturation voltage (VCEsat) for higher efficiency and less heat generation.
- High collector current capability (IC and ICM).
- High collector current gain (hFE) at high IC.
- Medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
- PNP complement: PBSS5350Z.
Applications
- Power management.
- DC/DC converters.
- Supply line switching.
- Battery chargers.
- Linear voltage regulation (LDO).
- Peripheral drivers.
- Drivers in low supply voltage applications (e.g., lamps, LEDs).
- Inductive load drivers (e.g., relays, buzzers, motors).
Q & A
- What is the maximum collector-emitter voltage (VCEO) of the PBSS4350Z/ZLF transistor?
The maximum collector-emitter voltage (VCEO) is 50 V.
- What is the package type of the PBSS4350Z/ZLF transistor?
The transistor is housed in a SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
- What is the maximum collector current (IC) of the PBSS4350Z/ZLF transistor?
The maximum collector current (IC) is 3000 mA.
- What is the typical collector-emitter saturation voltage (VCEsat) of the PBSS4350Z/ZLF transistor?
The typical collector-emitter saturation voltage (VCEsat) is 370 mV at 300 mA and 3 A.
- What is the minimum DC current gain (hFE) of the PBSS4350Z/ZLF transistor?
The minimum DC current gain (hFE) is 200 at IC = 1 A and VCE = 2 V.
- What is the maximum junction temperature (TJ) of the PBSS4350Z/ZLF transistor?
The maximum junction temperature (TJ) is 150 °C.
- What are some common applications of the PBSS4350Z/ZLF transistor?
Common applications include power management, DC/DC converters, supply line switching, battery chargers, linear voltage regulation (LDO), peripheral drivers, and inductive load drivers.
- Does the PBSS4350Z/ZLF transistor contain any intentionally added per- and polyfluoroalkyl substances (PFAS)?
No, the PBSS4350Z/ZLF does not contain any intentionally added PFAS.
- What is the transition frequency (fT) of the PBSS4350Z/ZLF transistor?
The transition frequency (fT) is 100 MHz.
- Is the PBSS4350Z/ZLF transistor automotive qualified?
No, the PBSS4350Z/ZLF is not listed as automotive qualified.