English
PMV30XPAR
  • Share:

Nexperia USA Inc. PMV30XPAR

Manufacturer No:
PMV30XPAR
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 4.9A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMV30XPAR is a 20 V, P-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This MOSFET is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, utilizing Trench MOSFET technology. It is designed for high-performance applications requiring low threshold voltage, fast switching, and an extended temperature range. The PMV30XPAR is AEC-Q101 qualified, making it suitable for automotive and other demanding environments.

Key Specifications

ParameterValue
Type NumberPMV30XPA
PackageSOT23 (TO-236AB)
Channel TypeP-channel
VDS [max]-20 V
RDSon [max] @ VGS = 4.5 V; @25°C38 mΩ
RDSon [max] @ VGS = 2.5 V62 mΩ
Tj [max]175 °C
ID [max]-4.9 A
QGD [typ]3.4 nC
QG(tot) [typ] @ VGS = 4.5 V11 nC
Ptot [max]1.4 W
Qr [typ]3 nC
VGSth [typ]-0.95 V
Automotive QualifiedYes (AEC-Q101)
Ciss [typ]1039 pF
Coss [typ]124 pF

Key Features

  • Low threshold voltage
  • Extended temperature range up to 175 °C
  • Trench MOSFET technology for high performance
  • Very fast switching capabilities
  • AEC-Q101 qualified for automotive applications

Applications

  • Relay driver
  • High-speed line driver
  • High-side load switch
  • Switching circuits
  • Automotive and industrial control systems
  • Power management in consumer and mobile devices

Q & A

  1. What is the maximum drain-source voltage (VDS) of the PMV30XPAR? The maximum drain-source voltage is -20 V.
  2. What is the package type of the PMV30XPAR? The PMV30XPAR is packaged in a SOT23 (TO-236AB) package.
  3. Is the PMV30XPAR AEC-Q101 qualified? Yes, the PMV30XPAR is AEC-Q101 qualified, making it suitable for automotive applications.
  4. What is the maximum junction temperature (Tj) of the PMV30XPAR? The maximum junction temperature is 175 °C.
  5. What are some typical applications of the PMV30XPAR? Typical applications include relay drivers, high-speed line drivers, high-side load switches, and switching circuits.
  6. What is the maximum drain current (ID) of the PMV30XPAR? The maximum drain current is -4.9 A.
  7. Does the PMV30XPAR use Trench MOSFET technology? Yes, the PMV30XPAR uses Trench MOSFET technology.
  8. Where can I purchase the PMV30XPAR? The PMV30XPAR can be purchased from various distributors such as Digi-Key, Mouser Electronics, and Avnet.
  9. What is the typical gate-source threshold voltage (VGSth) of the PMV30XPAR? The typical gate-source threshold voltage is -0.95 V.
  10. Is the PMV30XPAR RoHS compliant? Yes, the PMV30XPAR is RoHS compliant.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:4.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 8V
Rds On (Max) @ Id, Vgs:33mOhm @ 4.9A, 8V
Vgs(th) (Max) @ Id:1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:1039 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):610mW (Ta), 8.3W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.45
983

Please send RFQ , we will respond immediately.

Same Series
CBC9W4S10HE2X/AA
CBC9W4S10HE2X/AA
CONN D-SUB RCPT 9POS CRIMP
CBC47W1S10000
CBC47W1S10000
CONN D-SUB RCPT 47POS CRIMP
DD15S20LVLS/AA
DD15S20LVLS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HV50/AA
CBC13W3S10HV50/AA
CONN D-SUB RCPT 13POS CRIMP
CBC46W4S1S500S
CBC46W4S1S500S
CONN D-SUB RCPT 46POS CRIMP
DD26S2S50TX/AA
DD26S2S50TX/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V5X
DD26S2S0V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F000
DD26S2F000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V3X/AA
DD26S2S0V3X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V50
DD26S200V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200E0/AA
DD26S200E0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20J0X
DD26S20J0X
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number PMV30XPAR PMV30XPEAR
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 4.9A (Ta) 4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 8V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 33mOhm @ 4.9A, 8V 34mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id 1.3V @ 250µA 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 4.5 V 17 nC @ 4.5 V
Vgs (Max) ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 1039 pF @ 10 V 1465 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 610mW (Ta), 8.3W (Tc) 490mW (Ta), 5.435W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

SCTWA30N120
SCTWA30N120
STMicroelectronics
IC POWER MOSFET 1200V HIP247
FDB12N50TM
FDB12N50TM
onsemi
MOSFET N-CH 500V 11.5A D2PAK
PSMN2R0-30YLE,115
PSMN2R0-30YLE,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
FDD86567-F085
FDD86567-F085
onsemi
MOSFET N-CH 60V 100A DPAK
NTMFS6H818NT1G
NTMFS6H818NT1G
onsemi
MOSFET N-CH 80V 20A/123A 5DFN
STH315N10F7-6
STH315N10F7-6
STMicroelectronics
MOSFET N-CH 100V 180A H2PAK-6
STP14NK60ZFP
STP14NK60ZFP
STMicroelectronics
MOSFET N-CH 600V 13.5A TO220FP
NTMFS4C028NT1G
NTMFS4C028NT1G
onsemi
MOSFET N-CH 30V 16.4A/52A 5DFN
FQA11N90-F109
FQA11N90-F109
onsemi
MOSFET N-CH 900V 11.4A TO3PN
PHP9NQ20T,127
PHP9NQ20T,127
Nexperia USA Inc.
MOSFET N-CH 200V 8.7A TO220AB
FDC658APG
FDC658APG
onsemi
MOSFET P-CH 30V 4A SSOT6
BSS138-F169
BSS138-F169
onsemi
MOSFET N-CH SOT23

Related Product By Brand

BAT854SW,115
BAT854SW,115
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 40V SOT323
PMEG4030ER/8X
PMEG4030ER/8X
Nexperia USA Inc.
DIODE SCHOTTKY 40V 3A SOD123W
PMEG3015EH,115
PMEG3015EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 1.5A SOD123F
BAS16J,135
BAS16J,135
Nexperia USA Inc.
DIODE GP 100V 250MA SOD323F
BZX84J-B8V2,115
BZX84J-B8V2,115
Nexperia USA Inc.
DIODE ZENER 8.2V 550MW SOD323F
BZX84-C3V3/DG/B3,2
BZX84-C3V3/DG/B3,2
Nexperia USA Inc.
DIODE ZENER 3.3V 250MW TO236AB
BC869,115
BC869,115
Nexperia USA Inc.
TRANS PNP 20V 1A SOT89
PBSS4021PT,215
PBSS4021PT,215
Nexperia USA Inc.
TRANS PNP 20V 3.5A TO236AB
PMPB20ENZ
PMPB20ENZ
Nexperia USA Inc.
MOSFET N-CH 30V 7.2A DFN2020MD-6
HEF4541BT,653
HEF4541BT,653
Nexperia USA Inc.
IC OSC PROG TIMER 36MHZ 14SOIC
74AVCH8T245PW,112
74AVCH8T245PW,112
Nexperia USA Inc.
IC TRANSLATION TXRX 3.6V 24TSSOP
74HCT373PW-Q100,11
74HCT373PW-Q100,11
Nexperia USA Inc.
IC TRANSP LATCH OCT D 20TSSOP