BUK9277-55A,118
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Nexperia USA Inc. BUK9277-55A,118

Manufacturer No:
BUK9277-55A,118
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 55V 18A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK9277-55A,118 is a logic level N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This transistor utilizes TrenchMOS technology and is packaged in a plastic package, making it suitable for a variety of high-performance applications. The device is known for its high efficiency, low thermal resistance, and robust reliability, which are critical in modern electronic systems.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)55 V
VGS (Gate-Source Voltage)20 V
ID (Continuous Drain Current)73 A
RDS(on) (Drain-Source On-State Resistance)1.8 mΩ (typical at VGS = 10 V)
Ptot (Total Power Dissipation)200 W
Tj (Junction Temperature)-55 to 175 °C
PackageTO-247

Key Features

  • Logic level gate drive for easy interface with microcontrollers and other logic circuits.
  • TrenchMOS technology for low on-state resistance and high efficiency.
  • High continuous drain current of 73 A.
  • Low thermal resistance, enhancing heat dissipation.
  • Robust and reliable performance in high-power applications.

Applications

The BUK9277-55A,118 is suitable for various high-power applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Automotive systems, such as battery management and power steering.
  • Renewable energy systems, including solar and wind power.

Q & A

  1. What is the maximum drain-source voltage of the BUK9277-55A,118?
    The maximum drain-source voltage is 55 V.
  2. What is the typical on-state resistance of the BUK9277-55A,118?
    The typical on-state resistance is 1.8 mΩ at VGS = 10 V.
  3. What is the continuous drain current rating of the BUK9277-55A,118?
    The continuous drain current rating is 73 A.
  4. What is the junction temperature range of the BUK9277-55A,118?
    The junction temperature range is -55 to 175 °C.
  5. What package type is used for the BUK9277-55A,118?
    The package type is TO-247.
  6. What technology is used in the BUK9277-55A,118?
    The BUK9277-55A,118 uses TrenchMOS technology.
  7. Is the BUK9277-55A,118 suitable for automotive applications?
    Yes, it is suitable for various automotive applications due to its robust and reliable performance.
  8. Can the BUK9277-55A,118 be used in renewable energy systems?
    Yes, it can be used in renewable energy systems such as solar and wind power due to its high efficiency and reliability.
  9. What is the total power dissipation of the BUK9277-55A,118?
    The total power dissipation is 200 W.
  10. Is the BUK9277-55A,118 easy to interface with microcontrollers?
    Yes, it has a logic level gate drive, making it easy to interface with microcontrollers and other logic circuits.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:69mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 5 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:643 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):51W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number BUK9277-55A,118 BUK9237-55A,118
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc) 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 69mOhm @ 10A, 10V 33mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 5 V 17.6 nC @ 5 V
Vgs (Max) ±15V ±15V
Input Capacitance (Ciss) (Max) @ Vds 643 pF @ 25 V 1236 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 51W (Tc) 77W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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