BUK7Y3R5-40HX
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Nexperia USA Inc. BUK7Y3R5-40HX

Manufacturer No:
BUK7Y3R5-40HX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 120A LFPAK56
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The BUK7Y3R5-40HX is an N-channel MOSFET produced by Nexperia USA Inc., designed for high-performance applications. This device is fully automotive qualified to AEC-Q101 standards, ensuring reliability and durability in thermally demanding environments. It utilizes the advanced Trench 9 Superjunction technology, which enhances its electrical characteristics and thermal management capabilities. The MOSFET is housed in a robust LFPAK56 package, also known as Power-SO8, which is a surface-mounted package suitable for various automotive and industrial applications.

Key Specifications

Parameter Value Unit
Type Number BUK7Y3R5-40HX
Package LFPAK56; Power-SO8 (SOT669)
Channel Type N-channel
VDS [max] 40 V
RDSon [max] @ VGS = 10 V 3.5
Tj [max] 175 °C
ID [max] 120 A
QGD [typ] 6 nC
QG(tot) [typ] @ VGS = 10 V 31 nC
Ptot [max] 115 W
Qr [typ] 16 nC
VGSth [typ] 3 V
Automotive Qualified Yes (AEC-Q101)
Ciss [typ] 2294 pF
Coss [typ] 682 pF

Key Features

  • Advanced Trench 9 Superjunction Technology: Enhances electrical performance and thermal management.
  • Automotive Qualified: Fully compliant with AEC-Q101 standards, ensuring reliability in automotive applications.
  • High Current Capability: Maximum drain current of 120 A.
  • Low On-Resistance: Maximum RDSon of 3.5 mΩ at VGS = 10 V.
  • High Junction Temperature: Maximum Tj of 175 °C, suitable for thermally demanding environments.
  • Robust Packaging: LFPAK56 (Power-SO8) package for surface mounting.

Applications

  • Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification.
  • Industrial Power Systems: Used in high-power industrial applications requiring low on-resistance and high current handling.
  • Power Management: Ideal for power management systems that demand high efficiency and reliability.
  • Motor Control: Applicable in motor control circuits where high current and low on-resistance are critical.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the BUK7Y3R5-40HX?

    The maximum drain-source voltage (VDS) is 40 V.

  2. What is the typical on-resistance (RDSon) at VGS = 10 V?

    The typical on-resistance (RDSon) at VGS = 10 V is 3.5 mΩ.

  3. What is the maximum junction temperature (Tj) of the BUK7Y3R5-40HX?

    The maximum junction temperature (Tj) is 175 °C.

  4. Is the BUK7Y3R5-40HX automotive qualified?

    Yes, it is fully automotive qualified to AEC-Q101 standards.

  5. What is the maximum drain current (ID) of the BUK7Y3R5-40HX?

    The maximum drain current (ID) is 120 A.

  6. What package type is used for the BUK7Y3R5-40HX?

    The BUK7Y3R5-40HX is housed in an LFPAK56 (Power-SO8) package.

  7. What technology is used in the BUK7Y3R5-40HX?

    The BUK7Y3R5-40HX uses the advanced Trench 9 Superjunction technology.

  8. What are the typical gate-source threshold voltage (VGSth) and total gate charge (QG(tot))?

    The typical gate-source threshold voltage (VGSth) is 3 V, and the total gate charge (QG(tot)) at VGS = 10 V is 31 nC.

  9. What is the maximum total power dissipation (Ptot) of the BUK7Y3R5-40HX?

    The maximum total power dissipation (Ptot) is 115 W.

  10. Is the BUK7Y3R5-40HX RoHS compliant?

    Yes, the BUK7Y3R5-40HX is RoHS compliant.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:120A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:53 nC @ 10 V
Vgs (Max):+20V, -10V
Input Capacitance (Ciss) (Max) @ Vds:3441 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):115W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
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Similar Products

Part Number BUK7Y3R5-40HX BUK7Y2R5-40HX BUK7Y3R0-40HX
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 120A (Ta) 120A (Ta) 120A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 3.5mOhm @ 25A, 10V 2.5mOhm @ 25A, 10V 3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 3.6V @ 1mA 3.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 53 nC @ 10 V 79 nC @ 10 V 59 nC @ 10 V
Vgs (Max) +20V, -10V +20V, -10V +20V, -10V
Input Capacitance (Ciss) (Max) @ Vds 3441 pF @ 25 V 4790 pF @ 25 V 5449 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 115W (Ta) 190W (Ta) 172W (Ta)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8
Package / Case SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669

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