BUK7Y2R5-40HX
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Nexperia USA Inc. BUK7Y2R5-40HX

Manufacturer No:
BUK7Y2R5-40HX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 120A LFPAK56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK7Y2R5-40HX is a high-performance N-Channel MOSFET produced by Nexperia USA Inc. This component is fully automotive qualified to AEC-Q101 standards, making it suitable for use in thermally demanding environments. It features Trench 9 Superjunction technology, which enhances its efficiency and reliability in various automotive and industrial applications.

Key Specifications

Parameter Value
Vdss (Drain-Source Voltage) 40 V
Rds(on) (On-State Resistance) 2.5 mΩ @ 25 A, 10 V
Package SC-100, SOT-669
Pin Count 4
Maximum Junction Temperature 175 °C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Reach Compliance Compliant

Key Features

  • Automotive qualified to AEC-Q101 standards, ensuring reliability in harsh automotive environments.
  • Trench 9 Superjunction technology for improved efficiency and reduced losses.
  • Low on-state resistance (Rds(on)) of 2.5 mΩ at 25 A, 10 V.
  • High maximum junction temperature of 175 °C, suitable for thermally demanding applications.
  • Surface mount package (SC-100, SOT-669) for easy integration into modern PCB designs.
  • Compliant with Reach regulations, ensuring safety and environmental protection.

Applications

  • Automotive systems: Suitable for use in various automotive applications due to its AEC-Q101 qualification.
  • Power management: Ideal for power management systems requiring high efficiency and reliability.
  • Industrial control: Used in industrial control systems where high performance and durability are essential.
  • Motor control: Applicable in motor control circuits due to its low on-state resistance and high current handling capability.

Q & A

  1. What is the maximum drain-source voltage (Vdss) of the BUK7Y2R5-40HX?

    The maximum drain-source voltage (Vdss) is 40 V.

  2. What is the on-state resistance (Rds(on)) of the BUK7Y2R5-40HX?

    The on-state resistance (Rds(on)) is 2.5 mΩ at 25 A, 10 V.

  3. What package type does the BUK7Y2R5-40HX come in?

    The BUK7Y2R5-40HX comes in an SC-100, SOT-669 package.

  4. Is the BUK7Y2R5-40HX automotive qualified?

    Yes, it is fully automotive qualified to AEC-Q101 standards.

  5. What is the maximum junction temperature of the BUK7Y2R5-40HX?

    The maximum junction temperature is 175 °C.

  6. What is the moisture sensitivity level (MSL) of the BUK7Y2R5-40HX?

    The moisture sensitivity level (MSL) is 1 (Unlimited).

  7. Is the BUK7Y2R5-40HX Reach compliant?

    Yes, it is compliant with Reach regulations.

  8. What technology does the BUK7Y2R5-40HX use?

    The BUK7Y2R5-40HX uses Trench 9 Superjunction technology.

  9. What are some common applications of the BUK7Y2R5-40HX?

    Common applications include automotive systems, power management, industrial control, and motor control.

  10. How many pins does the BUK7Y2R5-40HX have?

    The BUK7Y2R5-40HX has 4 pins.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:120A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:3.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:79 nC @ 10 V
Vgs (Max):+20V, -10V
Input Capacitance (Ciss) (Max) @ Vds:4790 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):190W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
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Similar Products

Part Number BUK7Y2R5-40HX BUK7Y3R5-40HX BUK7Y2R0-40HX
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 120A (Ta) 120A (Ta) 120A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 2.5mOhm @ 25A, 10V 3.5mOhm @ 25A, 10V 2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 3.6V @ 1mA 4V @ 1mA 3.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 79 nC @ 10 V 53 nC @ 10 V 90.5 nC @ 10 V
Vgs (Max) +20V, -10V +20V, -10V +20V, -10V
Input Capacitance (Ciss) (Max) @ Vds 4790 pF @ 25 V 3441 pF @ 25 V 5450 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 190W (Ta) 115W (Ta) 217W (Ta)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8
Package / Case SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669

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