BSS123/LF1R
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Nexperia USA Inc. BSS123/LF1R

Manufacturer No:
BSS123/LF1R
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 150MA TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS123/LF1R, produced by Nexperia USA Inc., is an N-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. This component is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, making it ideal for applications requiring compact and efficient solutions. The BSS123/LF1R is known for its fast switching capabilities and logic level compatibility, which are crucial for various electronic designs.

Key Specifications

ParameterValue
Type numberBSS123
PackageSOT23 (TO-236AB)
Channel typeN-channel
VDS [max] (V)100
VGS [max] (V)20
Tj [max] (°C)150
ID [max] (A)0.15
Ptot [max] (W)0.25
Ciss [typ] (pF)23
Coss [typ] (pF)6
Automotive qualifiedNo
Release date2011-01-24

Key Features

  • Extremely fast switching
  • Logic level compatible
  • Subminiature surface mounting in SOT23 package
  • High-speed line driver capabilities
  • Relay driver applications
  • Telephone ringer applications

Applications

The BSS123/LF1R is versatile and can be used in a variety of applications, including:

  • High-speed line drivers
  • Relay drivers
  • Telephone ringers
  • Automotive and industrial control systems
  • Power management in computing and consumer electronics
  • Mobile and wearable device power management

Q & A

  1. What is the maximum drain-source voltage (VDS) of the BSS123/LF1R?
    The maximum drain-source voltage (VDS) is 100 V.
  2. What is the package type of the BSS123/LF1R?
    The BSS123/LF1R is packaged in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
  3. Is the BSS123/LF1R automotive qualified?
    No, the BSS123/LF1R is not automotive qualified.
  4. What is the maximum junction temperature (Tj) of the BSS123/LF1R?
    The maximum junction temperature (Tj) is 150°C.
  5. What are the typical input capacitance (Ciss) and output capacitance (Coss) values?
    The typical input capacitance (Ciss) is 23 pF, and the typical output capacitance (Coss) is 6 pF.
  6. What are some common applications of the BSS123/LF1R?
    Common applications include high-speed line drivers, relay drivers, telephone ringers, and power management in various electronic systems.
  7. Is the BSS123/LF1R still in production?
    The BSS123/LF1R is obsolete and no longer manufactured, but substitutes like the BSS123,215 are available.
  8. How can I obtain samples of the BSS123/LF1R or its substitutes?
    Samples can be ordered via Nexperia's sales organization or through their network of global and regional distributors.
  9. What is the significance of Trench MOSFET technology in the BSS123/LF1R?
    Trench MOSFET technology provides extremely fast switching capabilities and enhances the overall efficiency and performance of the transistor.
  10. Can I use the BSS123/LF1R in logic level applications?
    Yes, the BSS123/LF1R is logic level compatible, making it suitable for logic level applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:150mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:6Ohm @ 120mA, 10V
Vgs(th) (Max) @ Id:2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:40 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):250mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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BSS123/LF1R
BSS123/LF1R
MOSFET N-CH 100V 150MA TO236AB

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