BSS123/LF1R
  • Share:

Nexperia USA Inc. BSS123/LF1R

Manufacturer No:
BSS123/LF1R
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 150MA TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS123/LF1R, produced by Nexperia USA Inc., is an N-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. This component is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, making it ideal for applications requiring compact and efficient solutions. The BSS123/LF1R is known for its fast switching capabilities and logic level compatibility, which are crucial for various electronic designs.

Key Specifications

ParameterValue
Type numberBSS123
PackageSOT23 (TO-236AB)
Channel typeN-channel
VDS [max] (V)100
VGS [max] (V)20
Tj [max] (°C)150
ID [max] (A)0.15
Ptot [max] (W)0.25
Ciss [typ] (pF)23
Coss [typ] (pF)6
Automotive qualifiedNo
Release date2011-01-24

Key Features

  • Extremely fast switching
  • Logic level compatible
  • Subminiature surface mounting in SOT23 package
  • High-speed line driver capabilities
  • Relay driver applications
  • Telephone ringer applications

Applications

The BSS123/LF1R is versatile and can be used in a variety of applications, including:

  • High-speed line drivers
  • Relay drivers
  • Telephone ringers
  • Automotive and industrial control systems
  • Power management in computing and consumer electronics
  • Mobile and wearable device power management

Q & A

  1. What is the maximum drain-source voltage (VDS) of the BSS123/LF1R?
    The maximum drain-source voltage (VDS) is 100 V.
  2. What is the package type of the BSS123/LF1R?
    The BSS123/LF1R is packaged in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
  3. Is the BSS123/LF1R automotive qualified?
    No, the BSS123/LF1R is not automotive qualified.
  4. What is the maximum junction temperature (Tj) of the BSS123/LF1R?
    The maximum junction temperature (Tj) is 150°C.
  5. What are the typical input capacitance (Ciss) and output capacitance (Coss) values?
    The typical input capacitance (Ciss) is 23 pF, and the typical output capacitance (Coss) is 6 pF.
  6. What are some common applications of the BSS123/LF1R?
    Common applications include high-speed line drivers, relay drivers, telephone ringers, and power management in various electronic systems.
  7. Is the BSS123/LF1R still in production?
    The BSS123/LF1R is obsolete and no longer manufactured, but substitutes like the BSS123,215 are available.
  8. How can I obtain samples of the BSS123/LF1R or its substitutes?
    Samples can be ordered via Nexperia's sales organization or through their network of global and regional distributors.
  9. What is the significance of Trench MOSFET technology in the BSS123/LF1R?
    Trench MOSFET technology provides extremely fast switching capabilities and enhances the overall efficiency and performance of the transistor.
  10. Can I use the BSS123/LF1R in logic level applications?
    Yes, the BSS123/LF1R is logic level compatible, making it suitable for logic level applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:150mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:6Ohm @ 120mA, 10V
Vgs(th) (Max) @ Id:2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:40 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):250mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

-
11

Please send RFQ , we will respond immediately.

Same Series
BSS123/LF1R
BSS123/LF1R
MOSFET N-CH 100V 150MA TO236AB

Related Product By Categories

STP5NK60Z
STP5NK60Z
STMicroelectronics
MOSFET N-CH 600V 5A TO220AB
STB170NF04
STB170NF04
STMicroelectronics
MOSFET N-CH 40V 80A D2PAK
2N7002-TP
2N7002-TP
Micro Commercial Co
MOSFET N-CH 60V 115MA SOT23
STD3N62K3
STD3N62K3
STMicroelectronics
MOSFET N-CH 620V 2.7A DPAK
NVF2955T1G
NVF2955T1G
onsemi
MOSFET P-CH 60V 2.6A SOT223
STD5N52U
STD5N52U
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
FDMS86520L
FDMS86520L
onsemi
MOSFET N CH 60V 13.5A 8PQFN
NTMFS4C03NT1G
NTMFS4C03NT1G
onsemi
MOSFET N-CH 30V 30A/136A 5DFN
STP3NK80Z
STP3NK80Z
STMicroelectronics
MOSFET N-CH 800V 2.5A TO220AB
BSN20BK215
BSN20BK215
Nexperia USA Inc.
SMALL SIGNAL N-CHANNEL MOSFET
STD85N3LH5
STD85N3LH5
STMicroelectronics
MOSFET N-CH 30V 80A DPAK
BUK9222-55A,118
BUK9222-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 48A DPAK

Related Product By Brand

BAS21VD,135
BAS21VD,135
Nexperia USA Inc.
DIODE ARRAY GP 200V 200MA 6TSOP
BZX84-C3V3/DG/B3,2
BZX84-C3V3/DG/B3,2
Nexperia USA Inc.
DIODE ZENER 3.3V 250MW TO236AB
BCP54-10,135
BCP54-10,135
Nexperia USA Inc.
TRANS NPN 45V 1A SOT223
BCP56-QF
BCP56-QF
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
PMPB20ENZ
PMPB20ENZ
Nexperia USA Inc.
MOSFET N-CH 30V 7.2A DFN2020MD-6
74HC4851D-Q100,118
74HC4851D-Q100,118
Nexperia USA Inc.
IC MUX/DEMUX 8CH ANLG 16SOIC
74HC2G66DP-Q100H
74HC2G66DP-Q100H
Nexperia USA Inc.
IC SWITCH DUAL SPST 8TSSOP
74LVC245AD,112
74LVC245AD,112
Nexperia USA Inc.
IC TXRX NON-INVERT 3.6V 20SO
74LVC16245ADGG,118
74LVC16245ADGG,118
Nexperia USA Inc.
IC TXRX NON-INVERT 3.6V 48TSSOP
74AHC1G04GW-Q100H
74AHC1G04GW-Q100H
Nexperia USA Inc.
IC INVERTER 1CH 1-INP 5TSSOP
74LVC08ADB,118
74LVC08ADB,118
Nexperia USA Inc.
IC GATE AND 4CH 2-INP 14SSOP
BC807K-25,235
BC807K-25,235
Nexperia USA Inc.
BC807K-25 - 45 V, 500 MA PNP GEN