BSS123/LF1R
  • Share:

Nexperia USA Inc. BSS123/LF1R

Manufacturer No:
BSS123/LF1R
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 150MA TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS123/LF1R, produced by Nexperia USA Inc., is an N-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. This component is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, making it ideal for applications requiring compact and efficient solutions. The BSS123/LF1R is known for its fast switching capabilities and logic level compatibility, which are crucial for various electronic designs.

Key Specifications

ParameterValue
Type numberBSS123
PackageSOT23 (TO-236AB)
Channel typeN-channel
VDS [max] (V)100
VGS [max] (V)20
Tj [max] (°C)150
ID [max] (A)0.15
Ptot [max] (W)0.25
Ciss [typ] (pF)23
Coss [typ] (pF)6
Automotive qualifiedNo
Release date2011-01-24

Key Features

  • Extremely fast switching
  • Logic level compatible
  • Subminiature surface mounting in SOT23 package
  • High-speed line driver capabilities
  • Relay driver applications
  • Telephone ringer applications

Applications

The BSS123/LF1R is versatile and can be used in a variety of applications, including:

  • High-speed line drivers
  • Relay drivers
  • Telephone ringers
  • Automotive and industrial control systems
  • Power management in computing and consumer electronics
  • Mobile and wearable device power management

Q & A

  1. What is the maximum drain-source voltage (VDS) of the BSS123/LF1R?
    The maximum drain-source voltage (VDS) is 100 V.
  2. What is the package type of the BSS123/LF1R?
    The BSS123/LF1R is packaged in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
  3. Is the BSS123/LF1R automotive qualified?
    No, the BSS123/LF1R is not automotive qualified.
  4. What is the maximum junction temperature (Tj) of the BSS123/LF1R?
    The maximum junction temperature (Tj) is 150°C.
  5. What are the typical input capacitance (Ciss) and output capacitance (Coss) values?
    The typical input capacitance (Ciss) is 23 pF, and the typical output capacitance (Coss) is 6 pF.
  6. What are some common applications of the BSS123/LF1R?
    Common applications include high-speed line drivers, relay drivers, telephone ringers, and power management in various electronic systems.
  7. Is the BSS123/LF1R still in production?
    The BSS123/LF1R is obsolete and no longer manufactured, but substitutes like the BSS123,215 are available.
  8. How can I obtain samples of the BSS123/LF1R or its substitutes?
    Samples can be ordered via Nexperia's sales organization or through their network of global and regional distributors.
  9. What is the significance of Trench MOSFET technology in the BSS123/LF1R?
    Trench MOSFET technology provides extremely fast switching capabilities and enhances the overall efficiency and performance of the transistor.
  10. Can I use the BSS123/LF1R in logic level applications?
    Yes, the BSS123/LF1R is logic level compatible, making it suitable for logic level applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:150mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:6Ohm @ 120mA, 10V
Vgs(th) (Max) @ Id:2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:40 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):250mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

-
11

Please send RFQ , we will respond immediately.

Same Series
BSS123/LF1R
BSS123/LF1R
MOSFET N-CH 100V 150MA TO236AB

Related Product By Categories

FDMA430NZ
FDMA430NZ
onsemi
MOSFET N-CH 30V 5A 6MICROFET
BSC093N15NS5ATMA1
BSC093N15NS5ATMA1
Infineon Technologies
MOSFET N-CH 150V 87A TDSON
FDN357N
FDN357N
onsemi
MOSFET N-CH 30V 1.9A SUPERSOT3
FDMS86520L
FDMS86520L
onsemi
MOSFET N CH 60V 13.5A 8PQFN
BSS138K
BSS138K
onsemi
MOSFET N-CH 50V 220MA SOT23-3
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220
BUK9880-55A,115
BUK9880-55A,115
NXP USA Inc.
MOSFET N-CH 55V 7A SOT223
STP80PF55
STP80PF55
STMicroelectronics
MOSFET P-CH 55V 80A TO220AB
STD60N55F3
STD60N55F3
STMicroelectronics
MOSFET N-CH 55V 80A DPAK
FQD13N10LTM_NBEL001
FQD13N10LTM_NBEL001
onsemi
MOSFET N-CH 100V 10A DPAK
NVMFS6B25NLT1G
NVMFS6B25NLT1G
onsemi
MOSFET N-CH 100V 8A/33A 5DFN
FDMS86101E
FDMS86101E
onsemi
MOSFET N-CH 100V 12.4A/60A 8PQFN

Related Product By Brand

BAS21VD,135
BAS21VD,135
Nexperia USA Inc.
DIODE ARRAY GP 200V 200MA 6TSOP
BZX84J-B8V2,115
BZX84J-B8V2,115
Nexperia USA Inc.
DIODE ZENER 8.2V 550MW SOD323F
BZX84-C4V3,235
BZX84-C4V3,235
Nexperia USA Inc.
DIODE ZENER 4.3V 250MW TO236AB
PEMD2,315
PEMD2,315
Nexperia USA Inc.
TRANS PREBIAS 1NPN 1PNP SOT666
BCX54-16TF
BCX54-16TF
Nexperia USA Inc.
TRANS NPN 45V 1A SOT89
PBSS8110TVL
PBSS8110TVL
Nexperia USA Inc.
PBSS8110T/SOT23/TO-236AB
BC857CQBZ
BC857CQBZ
Nexperia USA Inc.
TRANS 45V 0.1A DFN1110D-3
PMZ600UNEYL
PMZ600UNEYL
Nexperia USA Inc.
MOSFET N-CH 20V 600MA DFN1006-3
BUK9Y14-40B,115
BUK9Y14-40B,115
Nexperia USA Inc.
MOSFET N-CH 40V 56A LFPAK56
74HCT4851PW,118
74HCT4851PW,118
Nexperia USA Inc.
IC MUX/DEMUX 8CH SELECT 16TSSOP
74HC11DB,118-NEX
74HC11DB,118-NEX
Nexperia USA Inc.
IC GATE AND 3CH 3-INP 14SSOP
PDZ3.9BGW,118
PDZ3.9BGW,118
Nexperia USA Inc.
SINGLE ZENER DIODE IN A SOD123 P