BSS123/LF1R
  • Share:

Nexperia USA Inc. BSS123/LF1R

Manufacturer No:
BSS123/LF1R
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 150MA TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS123/LF1R, produced by Nexperia USA Inc., is an N-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. This component is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, making it ideal for applications requiring compact and efficient solutions. The BSS123/LF1R is known for its fast switching capabilities and logic level compatibility, which are crucial for various electronic designs.

Key Specifications

ParameterValue
Type numberBSS123
PackageSOT23 (TO-236AB)
Channel typeN-channel
VDS [max] (V)100
VGS [max] (V)20
Tj [max] (°C)150
ID [max] (A)0.15
Ptot [max] (W)0.25
Ciss [typ] (pF)23
Coss [typ] (pF)6
Automotive qualifiedNo
Release date2011-01-24

Key Features

  • Extremely fast switching
  • Logic level compatible
  • Subminiature surface mounting in SOT23 package
  • High-speed line driver capabilities
  • Relay driver applications
  • Telephone ringer applications

Applications

The BSS123/LF1R is versatile and can be used in a variety of applications, including:

  • High-speed line drivers
  • Relay drivers
  • Telephone ringers
  • Automotive and industrial control systems
  • Power management in computing and consumer electronics
  • Mobile and wearable device power management

Q & A

  1. What is the maximum drain-source voltage (VDS) of the BSS123/LF1R?
    The maximum drain-source voltage (VDS) is 100 V.
  2. What is the package type of the BSS123/LF1R?
    The BSS123/LF1R is packaged in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
  3. Is the BSS123/LF1R automotive qualified?
    No, the BSS123/LF1R is not automotive qualified.
  4. What is the maximum junction temperature (Tj) of the BSS123/LF1R?
    The maximum junction temperature (Tj) is 150°C.
  5. What are the typical input capacitance (Ciss) and output capacitance (Coss) values?
    The typical input capacitance (Ciss) is 23 pF, and the typical output capacitance (Coss) is 6 pF.
  6. What are some common applications of the BSS123/LF1R?
    Common applications include high-speed line drivers, relay drivers, telephone ringers, and power management in various electronic systems.
  7. Is the BSS123/LF1R still in production?
    The BSS123/LF1R is obsolete and no longer manufactured, but substitutes like the BSS123,215 are available.
  8. How can I obtain samples of the BSS123/LF1R or its substitutes?
    Samples can be ordered via Nexperia's sales organization or through their network of global and regional distributors.
  9. What is the significance of Trench MOSFET technology in the BSS123/LF1R?
    Trench MOSFET technology provides extremely fast switching capabilities and enhances the overall efficiency and performance of the transistor.
  10. Can I use the BSS123/LF1R in logic level applications?
    Yes, the BSS123/LF1R is logic level compatible, making it suitable for logic level applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:150mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:6Ohm @ 120mA, 10V
Vgs(th) (Max) @ Id:2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:40 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):250mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

-
11

Please send RFQ , we will respond immediately.

Same Series
BSS123/LF1R
BSS123/LF1R
MOSFET N-CH 100V 150MA TO236AB

Related Product By Categories

IXFH60N65X2-4
IXFH60N65X2-4
IXYS
MOSFET N-CH 650V 60A TO247-4L
STD10NM60N
STD10NM60N
STMicroelectronics
MOSFET N-CH 600V 10A DPAK
FDD86250-F085
FDD86250-F085
onsemi
MOSFET N-CH 150V 50A TO252
FDMC86160ET100
FDMC86160ET100
onsemi
MOSFET N-CH 100V 9A/43A POWER33
FDBL86063-F085
FDBL86063-F085
onsemi
MOSFET N-CH 100V 240A 8HPSOF
NVMFS6H852NLT1G
NVMFS6H852NLT1G
onsemi
MOSFET N-CH 80V 11A/42A 5DFN
PMPB15XP
PMPB15XP
Nexperia USA Inc.
PMPB15XP - 12 V, SINGLE P-CHANNE
BSH112,235
BSH112,235
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB
NTD3055L170T4
NTD3055L170T4
onsemi
MOSFET N-CH 60V 9A DPAK
PMV65XP/MIR
PMV65XP/MIR
Nexperia USA Inc.
MOSFET P-CH 20V 2.8A TO236AB
NTNS3A65PZT5G
NTNS3A65PZT5G
onsemi
MOSFET P-CH 20V 281MA SOT883
BSS138-F169
BSS138-F169
onsemi
MOSFET N-CH SOT23

Related Product By Brand

PMEG3015EH,115
PMEG3015EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 1.5A SOD123F
BAS40W,115
BAS40W,115
Nexperia USA Inc.
NEXPERIA BAS40W - RECTIFIER DIOD
PMEG4030ER-QX
PMEG4030ER-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BAS21J/ZLF
BAS21J/ZLF
Nexperia USA Inc.
DIODE GEN PURP 300V 250MA SC90
BAS316/DG/B3,135
BAS316/DG/B3,135
Nexperia USA Inc.
DIODE GEN PURP 100V 250MA TO236
BZX84-B10/DG/B3215
BZX84-B10/DG/B3215
Nexperia USA Inc.
DIODE ZENER
BZX585-B4V7,135
BZX585-B4V7,135
Nexperia USA Inc.
DIODE ZENER 4.7V 300MW SOD523
MJD44H11J
MJD44H11J
Nexperia USA Inc.
TRANS NPN 80V 8A DPAK
74HCT4066D/C4118
74HCT4066D/C4118
Nexperia USA Inc.
74HCT4066D - SPST, 4 FUNC
74HC2G66DP-Q100H
74HC2G66DP-Q100H
Nexperia USA Inc.
IC SWITCH DUAL SPST 8TSSOP
74LVC00AD-Q100J
74LVC00AD-Q100J
Nexperia USA Inc.
IC GATE NAND 4CH 2-INP 14SO
74HC137D,652
74HC137D,652
Nexperia USA Inc.
IC DECODER/DEMUX 1 X 3:8 16SO