BSH111BKR
  • Share:

Nexperia USA Inc. BSH111BKR

Manufacturer No:
BSH111BKR
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 55V 210MA TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSH111BKR is an N-Channel MOSFET produced by Nexperia USA Inc. This discrete semiconductor component is designed for a variety of applications requiring efficient power management and control. The MOSFET is housed in a compact SOT23-3 package, making it suitable for space-constrained designs. With its robust specifications and reliable performance, the BSH111BKR is a popular choice among engineers and designers.

Key Specifications

ParameterValue
Channel TypeN-Channel
Drain-Source Voltage (Vds)55 V
Continuous Drain Current (Id)210 mA (at Ta)
Power Dissipation (Pd)302 mW (at Ta)
Package TypeTO-236-3, SC-59, SOT-23-3
Number of Pins3
Mounting TypeSurface Mount

Key Features

  • Compact SOT23-3 package for space-efficient designs
  • High drain-source voltage rating of 55 V
  • Continuous drain current of 210 mA at ambient temperature
  • Low power dissipation of 302 mW at ambient temperature
  • Surface mount technology for easy integration into PCBs

Applications

The BSH111BKR N-Channel MOSFET is suitable for a wide range of applications, including:

  • Power switching and control in consumer electronics
  • Automotive systems requiring robust and reliable power management
  • Industrial control systems and automation
  • Portable electronics and battery-powered devices

Q & A

  1. What is the channel type of the BSH111BKR MOSFET?
    The BSH111BKR is an N-Channel MOSFET.
  2. What is the maximum drain-source voltage (Vds) of the BSH111BKR?
    The maximum drain-source voltage is 55 V.
  3. What is the continuous drain current (Id) of the BSH111BKR at ambient temperature?
    The continuous drain current is 210 mA at ambient temperature.
  4. What is the power dissipation (Pd) of the BSH111BKR at ambient temperature?
    The power dissipation is 302 mW at ambient temperature.
  5. What package types are available for the BSH111BKR?
    The BSH111BKR is available in TO-236-3, SC-59, and SOT-23-3 packages.
  6. How many pins does the BSH111BKR have?
    The BSH111BKR has 3 pins.
  7. What is the mounting type of the BSH111BKR?
    The mounting type is surface mount.
  8. What are some common applications of the BSH111BKR?
    Common applications include power switching in consumer electronics, automotive systems, industrial control systems, and portable electronics.
  9. Why is the SOT23-3 package beneficial for the BSH111BKR?
    The SOT23-3 package is beneficial due to its compact size, making it ideal for space-constrained designs.
  10. Where can I find detailed specifications for the BSH111BKR?
    Detailed specifications can be found on official Nexperia websites, as well as on distributor sites like Digi-Key, Mouser, and Avnet.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:210mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V
Rds On (Max) @ Id, Vgs:4Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id:1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.5 nC @ 4.5 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:30 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):302mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.29
1,299

Please send RFQ , we will respond immediately.

Related Product By Categories

NCV8440ASTT1G
NCV8440ASTT1G
onsemi
MOSFET N-CH 59V 2.6A SOT223
STF4N80K5
STF4N80K5
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
FDB12N50TM
FDB12N50TM
onsemi
MOSFET N-CH 500V 11.5A D2PAK
STD5N52U
STD5N52U
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
CSD17581Q5AT
CSD17581Q5AT
Texas Instruments
MOSFET N-CH 30V 24A/123A 8VSON
PSMN2R0-30YLE,115
PSMN2R0-30YLE,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
STD2NK100Z
STD2NK100Z
STMicroelectronics
MOSFET N-CH 1000V 1.85A DPAK
STP4NK80ZFP
STP4NK80ZFP
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
STP22NM60N
STP22NM60N
STMicroelectronics
MOSFET N-CH 600V 16A TO220AB
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
FQD13N10LTM_NBEL001
FQD13N10LTM_NBEL001
onsemi
MOSFET N-CH 100V 10A DPAK
MCH3477-TL-W
MCH3477-TL-W
onsemi
MOSFET N-CH 20V 4.5A SC70

Related Product By Brand

PBSS304NZ,135
PBSS304NZ,135
Nexperia USA Inc.
TRANS NPN 60V 5.2A SOT223
PBSS4021NX,115
PBSS4021NX,115
Nexperia USA Inc.
TRANS NPN 20V 7A SOT89
PDTC123JT,215
PDTC123JT,215
Nexperia USA Inc.
TRANS PREBIAS NPN 50V TO236AB
2N7002P,235
2N7002P,235
Nexperia USA Inc.
MOSFET N-CH 60V 360MA TO236AB
PHP9NQ20T,127
PHP9NQ20T,127
Nexperia USA Inc.
MOSFET N-CH 200V 8.7A TO220AB
74HCT4851PW,118
74HCT4851PW,118
Nexperia USA Inc.
IC MUX/DEMUX 8CH SELECT 16TSSOP
HEF4066BT,652
HEF4066BT,652
Nexperia USA Inc.
IC SWITCH QUAD 1X1 14SOIC
IP4791CZ12,132
IP4791CZ12,132
Nexperia USA Inc.
IC INTERFACE SPECIALIZED 12HXSON
74LVC1G79GW,165
74LVC1G79GW,165
Nexperia USA Inc.
IC FF D-TYPE SNGL 1BIT 5TSSOP
74HC2G08DP,125
74HC2G08DP,125
Nexperia USA Inc.
IC GATE AND 2CH 2-INP 8TSSOP
74AHC1G04GV-Q100H
74AHC1G04GV-Q100H
Nexperia USA Inc.
IC INVERTER 1CH 1-INP SC74A
74HC164D,653
74HC164D,653
Nexperia USA Inc.
IC SHIFT REGST 8BIT SI-PO 14SOIC