BSH111BKR
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Nexperia USA Inc. BSH111BKR

Manufacturer No:
BSH111BKR
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 55V 210MA TO236AB
Delivery:
Payment:
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Product Introduction

Overview

The BSH111BKR is an N-Channel MOSFET produced by Nexperia USA Inc. This discrete semiconductor component is designed for a variety of applications requiring efficient power management and control. The MOSFET is housed in a compact SOT23-3 package, making it suitable for space-constrained designs. With its robust specifications and reliable performance, the BSH111BKR is a popular choice among engineers and designers.

Key Specifications

ParameterValue
Channel TypeN-Channel
Drain-Source Voltage (Vds)55 V
Continuous Drain Current (Id)210 mA (at Ta)
Power Dissipation (Pd)302 mW (at Ta)
Package TypeTO-236-3, SC-59, SOT-23-3
Number of Pins3
Mounting TypeSurface Mount

Key Features

  • Compact SOT23-3 package for space-efficient designs
  • High drain-source voltage rating of 55 V
  • Continuous drain current of 210 mA at ambient temperature
  • Low power dissipation of 302 mW at ambient temperature
  • Surface mount technology for easy integration into PCBs

Applications

The BSH111BKR N-Channel MOSFET is suitable for a wide range of applications, including:

  • Power switching and control in consumer electronics
  • Automotive systems requiring robust and reliable power management
  • Industrial control systems and automation
  • Portable electronics and battery-powered devices

Q & A

  1. What is the channel type of the BSH111BKR MOSFET?
    The BSH111BKR is an N-Channel MOSFET.
  2. What is the maximum drain-source voltage (Vds) of the BSH111BKR?
    The maximum drain-source voltage is 55 V.
  3. What is the continuous drain current (Id) of the BSH111BKR at ambient temperature?
    The continuous drain current is 210 mA at ambient temperature.
  4. What is the power dissipation (Pd) of the BSH111BKR at ambient temperature?
    The power dissipation is 302 mW at ambient temperature.
  5. What package types are available for the BSH111BKR?
    The BSH111BKR is available in TO-236-3, SC-59, and SOT-23-3 packages.
  6. How many pins does the BSH111BKR have?
    The BSH111BKR has 3 pins.
  7. What is the mounting type of the BSH111BKR?
    The mounting type is surface mount.
  8. What are some common applications of the BSH111BKR?
    Common applications include power switching in consumer electronics, automotive systems, industrial control systems, and portable electronics.
  9. Why is the SOT23-3 package beneficial for the BSH111BKR?
    The SOT23-3 package is beneficial due to its compact size, making it ideal for space-constrained designs.
  10. Where can I find detailed specifications for the BSH111BKR?
    Detailed specifications can be found on official Nexperia websites, as well as on distributor sites like Digi-Key, Mouser, and Avnet.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:210mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V
Rds On (Max) @ Id, Vgs:4Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id:1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.5 nC @ 4.5 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:30 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):302mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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