BSH103BKR
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Nexperia USA Inc. BSH103BKR

Manufacturer No:
BSH103BKR
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
BSH103BK - 30 V, N-CHANNEL TRENC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSH103BKR is a high-performance N-channel MOSFET produced by Nexperia USA Inc. This component is designed for small signal applications and is packaged in the compact SOT23-3 (TO-236AB) configuration. It is known for its low on-resistance and high current handling capabilities, making it suitable for a variety of electronic systems requiring efficient power management.

Key Specifications

Parameter Value Unit
Manufacturer Nexperia USA Inc.
Package SOT23-3 (TO-236AB)
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 30 V V
Id - Continuous Drain Current 1.05 A A
Rds On - Drain-Source Resistance 200 mΩ (typical at Vgs = 4.5 V)
Vgs - Gate-Source Voltage -8 V to +8 V V
Threshold Voltage 400 mV (typical) mV
Minimum Operating Temperature -55 °C °C
Maximum Operating Temperature +150 °C °C
Power Dissipation 417 mW (Ta), 2.1 W (Tc) mW, W
Channel Mode Enhancement

Key Features

  • High-performance N-channel MOSFET with low on-resistance.
  • Compact SOT23-3 (TO-236AB) package for space-efficient designs.
  • Continuous drain current of up to 1.05 A.
  • Drain-source breakdown voltage of 30 V.
  • Gate-source voltage range of -8 V to +8 V.
  • Enhancement mode operation.
  • Rohs compliant.
  • Operating temperature range from -55 °C to +150 °C.

Applications

  • Small signal applications in electronic systems.
  • Efficient power management in automotive and industrial systems.
  • Compact power transistor solutions for various electronic devices.
  • General-purpose switching and amplification.

Q & A

  1. What is the package type of the BSH103BKR MOSFET?

    The BSH103BKR is packaged in the SOT23-3 (TO-236AB) configuration.

  2. What is the maximum drain-source breakdown voltage of the BSH103BKR?

    The maximum drain-source breakdown voltage is 30 V.

  3. What is the continuous drain current rating of the BSH103BKR?

    The continuous drain current rating is up to 1.05 A.

  4. What is the typical on-resistance of the BSH103BKR at Vgs = 4.5 V?

    The typical on-resistance at Vgs = 4.5 V is 200 mΩ.

  5. What is the operating temperature range of the BSH103BKR?

    The operating temperature range is from -55 °C to +150 °C.

  6. Is the BSH103BKR Rohs compliant?

    Yes, the BSH103BKR is Rohs compliant.

  7. What is the channel mode of the BSH103BKR?

    The channel mode is enhancement.

  8. What are some common applications of the BSH103BKR?

    Common applications include small signal applications, efficient power management in automotive and industrial systems, and general-purpose switching and amplification.

  9. What is the power dissipation rating of the BSH103BKR?

    The power dissipation rating is 417 mW (Ta) and 2.1 W (Tc).

  10. What is the threshold voltage of the BSH103BKR?

    The typical threshold voltage is 400 mV.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:270mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id:1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.2 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:79.3 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):330mW (Ta), 2.1W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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