2N7002BKW,115
  • Share:

Nexperia USA Inc. 2N7002BKW,115

Manufacturer No:
2N7002BKW,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 310MA SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002BKW,115 is an N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This component utilizes Trench MOSFET technology and is packaged in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. It is designed for high-performance applications requiring fast switching and low power dissipation.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (Vds) 60 V
Drain Current (Id) 310 mA
Gate Threshold Voltage (Vgs(th)) 1.1 - 2.1 V
Maximum Gate Source Voltage (Vgs) -20 to +20 V
On-State Resistance (Rds(on)) 1.6 Ω @ Vgs = 10V
Maximum Power Dissipation (Ptot) 330 mW
Package Type SOT323 (SC-70)
Mounting Type Surface Mount

Key Features

  • Logic-level compatible
  • Very fast switching
  • Trench MOSFET technology for improved performance
  • ESD protection up to 2 kV
  • AEC-Q101 qualified for automotive applications

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits
  • Automotive and industrial applications
  • Power, computing, consumer, mobile, and wearable devices

Q & A

  1. What is the drain-source voltage rating of the 2N7002BKW,115?

    The drain-source voltage rating is 60 V.

  2. What is the maximum drain current for the 2N7002BKW,115?

    The maximum drain current is 310 mA.

  3. What is the gate threshold voltage range for this MOSFET?

    The gate threshold voltage range is 1.1 to 2.1 V.

  4. Is the 2N7002BKW,115 AEC-Q101 qualified?

    Yes, it is AEC-Q101 qualified for automotive applications.

  5. What type of package does the 2N7002BKW,115 use?

    The component is packaged in a SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package.

  6. What are some common applications for the 2N7002BKW,115?

    Common applications include relay drivers, high-speed line drivers, low-side load switches, and switching circuits.

  7. Does the 2N7002BKW,115 have ESD protection?

    Yes, it has ESD protection up to 2 kV.

  8. What is the maximum power dissipation for the 2N7002BKW,115?

    The maximum power dissipation is 330 mW.

  9. Is the 2N7002BKW,115 suitable for high-speed switching applications?

    Yes, it is designed for very fast switching.

  10. Where can I purchase the 2N7002BKW,115?

    You can purchase it from various distributors listed on the Nexperia website or other electronic component suppliers.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:310mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.6 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):275mW (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-323
Package / Case:SC-70, SOT-323
0 Remaining View Similar

In Stock

$0.36
2,597

Please send RFQ , we will respond immediately.

Similar Products

Part Number 2N7002BKW,115 2N7002BKT,115
Manufacturer Nexperia USA Inc. NXP USA Inc.
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 310mA (Ta) 290mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 5V, 10V
Rds On (Max) @ Id, Vgs 1.6Ohm @ 500mA, 10V 1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.6 nC @ 4.5 V 0.6 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 10 V 50 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 275mW (Ta) 260mW (Ta)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-323 SC-75
Package / Case SC-70, SOT-323 SC-75, SOT-416

Related Product By Categories

SCTWA30N120
SCTWA30N120
STMicroelectronics
IC POWER MOSFET 1200V HIP247
STW58N65DM2AG
STW58N65DM2AG
STMicroelectronics
MOSFET N-CH 650V 48A TO247
FDMA430NZ
FDMA430NZ
onsemi
MOSFET N-CH 30V 5A 6MICROFET
FQD4P40TM
FQD4P40TM
onsemi
MOSFET P-CH 400V 2.7A DPAK
BSC093N15NS5ATMA1
BSC093N15NS5ATMA1
Infineon Technologies
MOSFET N-CH 150V 87A TDSON
FDD86567-F085
FDD86567-F085
onsemi
MOSFET N-CH 60V 100A DPAK
NTMFS6H818NT1G
NTMFS6H818NT1G
onsemi
MOSFET N-CH 80V 20A/123A 5DFN
BUK762R6-60E,118
BUK762R6-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 120A D2PAK
NTD20N06LT4
NTD20N06LT4
onsemi
MOSFET N-CH 60V 20A DPAK
STW6N120K3
STW6N120K3
STMicroelectronics
MOSFET N-CH 1200V 6A TO247
MCH3477-TL-W
MCH3477-TL-W
onsemi
MOSFET N-CH 20V 4.5A SC70
MCH3478-TL-W
MCH3478-TL-W
onsemi
MOSFET N-CH 30V 2A 3MCPH

Related Product By Brand

PRTR5V0U2AX,215
PRTR5V0U2AX,215
Nexperia USA Inc.
TVS DIODE 5.5VWM SOT143B
PTVS14VS1UR/8X
PTVS14VS1UR/8X
Nexperia USA Inc.
TVS DIODE 14VWM 23.2VC SOD123W
PMEG4005EJF
PMEG4005EJF
Nexperia USA Inc.
PMEG4005EJ/SOD323/SOD2
PMEG6010ELR-QX
PMEG6010ELR-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BC847CMB,315
BC847CMB,315
Nexperia USA Inc.
TRANS NPN 45V 0.1A DFN1006B-3
PBSS8110TVL
PBSS8110TVL
Nexperia USA Inc.
PBSS8110T/SOT23/TO-236AB
BC847CW-QX
BC847CW-QX
Nexperia USA Inc.
TRANS NPN 45V 0.1A SOT323
74LVC4066PW,112
74LVC4066PW,112
Nexperia USA Inc.
IC SWITCH QUAD SPST 14TSSOP
IP4791CZ12,132
IP4791CZ12,132
Nexperia USA Inc.
IC INTERFACE SPECIALIZED 12HXSON
74LVC1G74GT,115
74LVC1G74GT,115
Nexperia USA Inc.
IC FF D-TYPE SNGL 1BIT 8XSON
74LVC1G11GW,125
74LVC1G11GW,125
Nexperia USA Inc.
IC GATE AND 1CH 3-INP 6TSSOP
74HCT373PW-Q100,11
74HCT373PW-Q100,11
Nexperia USA Inc.
IC TRANSP LATCH OCT D 20TSSOP