2N7002BKW,115
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Nexperia USA Inc. 2N7002BKW,115

Manufacturer No:
2N7002BKW,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 310MA SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002BKW,115 is an N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This component utilizes Trench MOSFET technology and is packaged in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. It is designed for high-performance applications requiring fast switching and low power dissipation.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (Vds) 60 V
Drain Current (Id) 310 mA
Gate Threshold Voltage (Vgs(th)) 1.1 - 2.1 V
Maximum Gate Source Voltage (Vgs) -20 to +20 V
On-State Resistance (Rds(on)) 1.6 Ω @ Vgs = 10V
Maximum Power Dissipation (Ptot) 330 mW
Package Type SOT323 (SC-70)
Mounting Type Surface Mount

Key Features

  • Logic-level compatible
  • Very fast switching
  • Trench MOSFET technology for improved performance
  • ESD protection up to 2 kV
  • AEC-Q101 qualified for automotive applications

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits
  • Automotive and industrial applications
  • Power, computing, consumer, mobile, and wearable devices

Q & A

  1. What is the drain-source voltage rating of the 2N7002BKW,115?

    The drain-source voltage rating is 60 V.

  2. What is the maximum drain current for the 2N7002BKW,115?

    The maximum drain current is 310 mA.

  3. What is the gate threshold voltage range for this MOSFET?

    The gate threshold voltage range is 1.1 to 2.1 V.

  4. Is the 2N7002BKW,115 AEC-Q101 qualified?

    Yes, it is AEC-Q101 qualified for automotive applications.

  5. What type of package does the 2N7002BKW,115 use?

    The component is packaged in a SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package.

  6. What are some common applications for the 2N7002BKW,115?

    Common applications include relay drivers, high-speed line drivers, low-side load switches, and switching circuits.

  7. Does the 2N7002BKW,115 have ESD protection?

    Yes, it has ESD protection up to 2 kV.

  8. What is the maximum power dissipation for the 2N7002BKW,115?

    The maximum power dissipation is 330 mW.

  9. Is the 2N7002BKW,115 suitable for high-speed switching applications?

    Yes, it is designed for very fast switching.

  10. Where can I purchase the 2N7002BKW,115?

    You can purchase it from various distributors listed on the Nexperia website or other electronic component suppliers.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:310mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.6 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):275mW (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-323
Package / Case:SC-70, SOT-323
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In Stock

$0.36
2,597

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Similar Products

Part Number 2N7002BKW,115 2N7002BKT,115
Manufacturer Nexperia USA Inc. NXP USA Inc.
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 310mA (Ta) 290mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 5V, 10V
Rds On (Max) @ Id, Vgs 1.6Ohm @ 500mA, 10V 1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.6 nC @ 4.5 V 0.6 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 10 V 50 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 275mW (Ta) 260mW (Ta)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-323 SC-75
Package / Case SC-70, SOT-323 SC-75, SOT-416

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