2N7002BKT,115
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NXP USA Inc. 2N7002BKT,115

Manufacturer No:
2N7002BKT,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 290MA SC75
Delivery:
Payment:
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Product Introduction

Overview

The 2N7002BKT,115 is a dual N-Channel MOSFET produced by NXP USA Inc., now known as Nexperia. This component is part of the 2N7002 series, which is widely used in various electronic applications due to its robust performance and reliability. The MOSFET is designed for surface mount technology, making it suitable for modern electronic designs where space efficiency is crucial.

Key Specifications

Parameter Value
Package Type SOT-363 (SC-88)
Mounting Type Surface Mount
Maximum Drain-Source Voltage (Vds) 60 V
Maximum Continuous Drain Current (Id) 300 mA
Maximum Power Dissipation (Pd) 445 mW
Channel Mode Enhancement
Maximum Gate Threshold Voltage (Vgs(th)) 2.1 V
Minimum Gate Threshold Voltage (Vgs(th)) 1.1 V
Maximum Gate Source Voltage (Vgs) -20 V to +20 V
Transistor Configuration Isolated
Height 1 mm

Key Features

  • High Performance: The 2N7002BKT,115 offers high drain current and low on-resistance, making it suitable for a variety of power switching applications.
  • Compact Package: The SOT-363 package is compact and ideal for space-constrained designs.
  • Enhancement Mode: The MOSFET operates in enhancement mode, which means it is normally off and requires a positive gate-source voltage to turn on.
  • Isolated Configuration: The dual configuration allows for isolated switching, which is beneficial in applications requiring separate control of two channels.
  • Low Power Dissipation: With a maximum power dissipation of 445 mW, this MOSFET is efficient in managing heat and power consumption.

Applications

  • Power Switching: Suitable for general-purpose power switching applications, including DC-DC converters and power supplies.
  • Motor Control: Can be used in motor control circuits due to its high current handling capability.
  • Audio and Video Equipment: Used in audio and video equipment for switching and amplification purposes.
  • Automotive Electronics: Applicable in automotive electronics for various control and switching functions.
  • Industrial Automation: Used in industrial automation for controlling and switching various loads.

Q & A

  1. What is the maximum drain-source voltage of the 2N7002BKT,115 MOSFET?

    The maximum drain-source voltage is 60 V.

  2. What is the package type of the 2N7002BKT,115?

    The package type is SOT-363 (SC-88).

  3. What is the maximum continuous drain current of the 2N7002BKT,115?

    The maximum continuous drain current is 300 mA.

  4. What is the channel mode of the 2N7002BKT,115 MOSFET?

    The channel mode is enhancement.

  5. What is the maximum gate threshold voltage of the 2N7002BKT,115?

    The maximum gate threshold voltage is 2.1 V.

  6. What is the maximum power dissipation of the 2N7002BKT,115?

    The maximum power dissipation is 445 mW.

  7. Is the 2N7002BKT,115 suitable for high-frequency applications?

    While it can be used in some high-frequency applications, it is generally more suited for general-purpose power switching and low to medium frequency uses.

  8. Can the 2N7002BKT,115 be used in automotive applications?

    Yes, it can be used in automotive electronics for various control and switching functions.

  9. What is the height of the 2N7002BKT,115 package?

    The height of the package is 1 mm.

  10. Is the 2N7002BKT,115 RoHS compliant?

    Yes, the 2N7002BKT,115 is RoHS compliant.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:290mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.6 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):260mW (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SC-75
Package / Case:SC-75, SOT-416
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Similar Products

Part Number 2N7002BKT,115 2N7002BKW,115
Manufacturer NXP USA Inc. Nexperia USA Inc.
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 290mA (Ta) 310mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 10V
Rds On (Max) @ Id, Vgs 1.6Ohm @ 500mA, 10V 1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.6 nC @ 4.5 V 0.6 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 10 V 50 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 260mW (Ta) 275mW (Ta)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SC-75 SOT-323
Package / Case SC-75, SOT-416 SC-70, SOT-323

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