IRLML6402TR
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Infineon Technologies IRLML6402TR

Manufacturer No:
IRLML6402TR
Manufacturer:
Infineon Technologies
Package:
Cut Tape (CT)
Description:
MOSFET P-CH 20V 3.7A SOT-23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRLML6402TR is a -20V single P-channel HEXFET power MOSFET produced by Infineon Technologies. It is packaged in a low-profile Micro3 (SOT-23) package, which is ideal for applications where printed circuit board space is at a premium. This MOSFET features extremely low on-resistance per silicon area, fast switching speeds, and a ruggedized device design, making it highly efficient and reliable for various applications.

Key Specifications

FET Type P-Channel
Drain-to-Source Voltage (Vdss) 20V
Drain-Source On Resistance-Max (Rds(on)) 0.065Ω @ Vgs = -4.5V, Id = -3.7A
Rated Power Dissipation (Pd) 1.3W @ 25°C
Gate Charge (Qg) 8nC
Package Style MICRO-3 (SOT-23)
Mounting Method Surface Mount
Continuous Drain Current (Id) -3.7A @ Vgs = -4.5V, 25°C
Operating Junction Temperature Range -55°C to 150°C
Gate to Source Voltage (Vgs) ±12V

Key Features

  • Ultra-low on-resistance
  • P-Channel MOSFET
  • SOT-23 footprint
  • Low profile (<1.1mm)
  • Available in tape and reel
  • Fast switching
  • Lead-free and halogen-free
  • Planar cell structure for wide SOA
  • Industry standard surface-mount package

Applications

  • Battery and load management
  • Portable electronics
  • PCMCIA cards
  • Printed circuit boards where space is at a premium
  • DC switches and load switches
  • Medical electronics
  • IoT devices
  • New energy applications

Q & A

  1. What is the drain-to-source voltage rating of the IRLML6402TR?

    The drain-to-source voltage (Vdss) rating is 20V.

  2. What is the maximum on-resistance of the IRLML6402TR?

    The maximum on-resistance (Rds(on)) is 0.065Ω at Vgs = -4.5V and Id = -3.7A.

  3. What is the rated power dissipation of the IRLML6402TR?

    The rated power dissipation (Pd) is 1.3W at 25°C.

  4. What is the package style of the IRLML6402TR?

    The package style is MICRO-3 (SOT-23).

  5. Is the IRLML6402TR lead-free and halogen-free?
  6. What are the typical applications of the IRLML6402TR?

    Typical applications include battery and load management, portable electronics, PCMCIA cards, and printed circuit boards where space is limited.

  7. What is the operating junction temperature range of the IRLML6402TR?

    The operating junction temperature range is -55°C to 150°C.

  8. Is the IRLML6402TR available in tape and reel packaging?
  9. What is the continuous drain current rating of the IRLML6402TR?

    The continuous drain current (Id) rating is -3.7A at Vgs = -4.5V and 25°C.

  10. Does the IRLML6402TR comply with RoHS standards?

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:65mOhm @ 3.7A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 5 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:633 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:Micro3™/SOT-23
Package / Case:TO-236-3, SC-59, SOT-23-3
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In Stock

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Similar Products

Part Number IRLML6402TR IRLML2402TR IRLML6302TR IRLML6401TR
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete
FET Type P-Channel N-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V 12 V
Current - Continuous Drain (Id) @ 25°C 3.7A (Ta) 1.2A (Ta) 780mA (Ta) 4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - - - -
Rds On (Max) @ Id, Vgs 65mOhm @ 3.7A, 4.5V 250mOhm @ 930mA, 4.5V 600mOhm @ 610mA, 4.5V 50mOhm @ 4.3A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA 700mV @ 250µA (Min) 1.5V @ 250µA 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 5 V 3.9 nC @ 4.5 V 3.6 nC @ 4.45 V 15 nC @ 5 V
Vgs (Max) - - - -
Input Capacitance (Ciss) (Max) @ Vds 633 pF @ 10 V 110 pF @ 15 V 97 pF @ 15 V 830 pF @ 10 V
FET Feature - - - -
Power Dissipation (Max) - - - -
Operating Temperature - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package Micro3™/SOT-23 Micro3™/SOT-23 Micro3™/SOT-23 Micro3™/SOT-23
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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