IRFR5410TRPBF
  • Share:

Infineon Technologies IRFR5410TRPBF

Manufacturer No:
IRFR5410TRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 100V 13A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRFR5410TRPBF is a 100V single P-channel power MOSFET produced by Infineon Technologies. This component is part of the IR MOSFET family, which utilizes proven silicon processes to offer designers a wide range of benefits. The MOSFET is packaged in a D-Pak configuration, which is suitable for surface mount applications. It is known for its ultra-low on-resistance, making it efficient for various power management tasks.

Key Specifications

ParameterValue
ConfigurationSINGLE WITH BUILT-IN DIODE
Channel TypeP-Channel
Maximum Drain-Source Voltage (Vds)100V
Maximum Continuous Drain Current (Id)13A
On-Resistance (Rds(on))Ultra Low
Maximum Power Dissipation (Pd)66 W
Package TypeD-Pak
Surface MountYES

Key Features

  • Ultra-low on-resistance for efficient power management
  • Single P-channel configuration with a built-in diode
  • High maximum drain-source voltage of 100V
  • High maximum continuous drain current of 13A
  • Maximum power dissipation of 66 W
  • D-Pak package suitable for surface mount applications

Applications

The IRFR5410TRPBF is versatile and can be used in a variety of applications, including but not limited to:

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Switching and linear power amplifiers
  • Automotive and industrial power systems

Q & A

  1. What is the maximum drain-source voltage of the IRFR5410TRPBF?
    The maximum drain-source voltage is 100V.
  2. What is the maximum continuous drain current of the IRFR5410TRPBF?
    The maximum continuous drain current is 13A.
  3. What is the package type of the IRFR5410TRPBF?
    The package type is D-Pak.
  4. Is the IRFR5410TRPBF suitable for surface mount applications?
    Yes, it is suitable for surface mount applications.
  5. What is the maximum power dissipation of the IRFR5410TRPBF?
    The maximum power dissipation is 66 W.
  6. What is the on-resistance of the IRFR5410TRPBF?
    The on-resistance is ultra-low.
  7. What type of channel does the IRFR5410TRPBF have?
    The IRFR5410TRPBF has a P-channel configuration.
  8. Does the IRFR5410TRPBF have a built-in diode?
    Yes, it has a built-in diode.
  9. What are some common applications of the IRFR5410TRPBF?
    Common applications include power supplies, motor control systems, switching and linear power amplifiers, and automotive and industrial power systems.
  10. Who is the manufacturer of the IRFR5410TRPBF?
    The manufacturer is Infineon Technologies.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:205mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:58 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:760 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):66W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$1.78
140

Please send RFQ , we will respond immediately.

Same Series
IRFU5410PBF
IRFU5410PBF
MOSFET P-CH 100V 13A IPAK
IRFR5410TRRPBF
IRFR5410TRRPBF
MOSFET P-CH 100V 13A DPAK
IRFR5410TRLPBF
IRFR5410TRLPBF
MOSFET P-CH 100V 13A DPAK
IRFR5410PBF
IRFR5410PBF
MOSFET P-CH 100V 13A DPAK

Similar Products

Part Number IRFR5410TRPBF IRFR5410TRRPBF IRFR5410TRLPBF
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Not For New Designs Last Time Buy
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc) 13A (Tc) 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 205mOhm @ 7.8A, 10V 205mOhm @ 7.8A, 10V 205mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 58 nC @ 10 V 58 nC @ 10 V 58 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 760 pF @ 25 V 760 pF @ 25 V 760 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 66W (Tc) 66W (Tc) 66W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D-Pak D-Pak D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

FDMS86255ET150
FDMS86255ET150
onsemi
MOSFET N-CH 150V 10A/63A POWER56
BSS84-TP
BSS84-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT23
FDMC2523P
FDMC2523P
onsemi
MOSFET P-CH 150V 3A 8MLP
STW58N65DM2AG
STW58N65DM2AG
STMicroelectronics
MOSFET N-CH 650V 48A TO247
CSD17575Q3
CSD17575Q3
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
STP3NK80Z
STP3NK80Z
STMicroelectronics
MOSFET N-CH 800V 2.5A TO220AB
STF13N65M2
STF13N65M2
STMicroelectronics
MOSFET N-CH 650V 10A TO220FP
STB100N10F7
STB100N10F7
STMicroelectronics
MOSFET N-CH 100V 80A D2PAK
STH150N10F7-2
STH150N10F7-2
STMicroelectronics
MOSFET N-CH 100V 110A H2PAK-2
NTD4909NT4G
NTD4909NT4G
onsemi
MOSFET N-CH 30V 8.8A/41A DPAK
IRF7416TRPBF-1
IRF7416TRPBF-1
Infineon Technologies
MOSFET P-CH 30V 10A 8SO

Related Product By Brand

BAV70UE6327
BAV70UE6327
Infineon Technologies
HIGH SPEED SWITCHING DIODE
BAS 70-04 B5003
BAS 70-04 B5003
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT23
BAS1602WH6327XTSA1
BAS1602WH6327XTSA1
Infineon Technologies
DIODE GEN PURP 80V 200MA SCD80-2
BC859-C
BC859-C
Infineon Technologies
TRANS PNP 30V 0.1A SOT23-3
BC817-40E6433
BC817-40E6433
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
BC847BWH6433XTMA1
BC847BWH6433XTMA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
BCV47E6433HTMA1
BCV47E6433HTMA1
Infineon Technologies
TRANS NPN DARL 60V 0.5A SOT23
BC 856B E6433
BC 856B E6433
Infineon Technologies
TRANS PNP 65V 0.1A SOT23
IRF7240TRPBF
IRF7240TRPBF
Infineon Technologies
MOSFET P-CH 40V 10.5A 8SO
IRFB4227PBF
IRFB4227PBF
Infineon Technologies
MOSFET N-CH 200V 65A TO220AB
FF600R12ME4PB72BPSA1
FF600R12ME4PB72BPSA1
Infineon Technologies
MEDIUM POWER ECONO
BSP452 E6327
BSP452 E6327
Infineon Technologies
IC PWR SWTCH N-CHAN 1:1 SOT223-4