IRFR5410TRPBF
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Infineon Technologies IRFR5410TRPBF

Manufacturer No:
IRFR5410TRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 100V 13A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRFR5410TRPBF is a 100V single P-channel power MOSFET produced by Infineon Technologies. This component is part of the IR MOSFET family, which utilizes proven silicon processes to offer designers a wide range of benefits. The MOSFET is packaged in a D-Pak configuration, which is suitable for surface mount applications. It is known for its ultra-low on-resistance, making it efficient for various power management tasks.

Key Specifications

ParameterValue
ConfigurationSINGLE WITH BUILT-IN DIODE
Channel TypeP-Channel
Maximum Drain-Source Voltage (Vds)100V
Maximum Continuous Drain Current (Id)13A
On-Resistance (Rds(on))Ultra Low
Maximum Power Dissipation (Pd)66 W
Package TypeD-Pak
Surface MountYES

Key Features

  • Ultra-low on-resistance for efficient power management
  • Single P-channel configuration with a built-in diode
  • High maximum drain-source voltage of 100V
  • High maximum continuous drain current of 13A
  • Maximum power dissipation of 66 W
  • D-Pak package suitable for surface mount applications

Applications

The IRFR5410TRPBF is versatile and can be used in a variety of applications, including but not limited to:

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Switching and linear power amplifiers
  • Automotive and industrial power systems

Q & A

  1. What is the maximum drain-source voltage of the IRFR5410TRPBF?
    The maximum drain-source voltage is 100V.
  2. What is the maximum continuous drain current of the IRFR5410TRPBF?
    The maximum continuous drain current is 13A.
  3. What is the package type of the IRFR5410TRPBF?
    The package type is D-Pak.
  4. Is the IRFR5410TRPBF suitable for surface mount applications?
    Yes, it is suitable for surface mount applications.
  5. What is the maximum power dissipation of the IRFR5410TRPBF?
    The maximum power dissipation is 66 W.
  6. What is the on-resistance of the IRFR5410TRPBF?
    The on-resistance is ultra-low.
  7. What type of channel does the IRFR5410TRPBF have?
    The IRFR5410TRPBF has a P-channel configuration.
  8. Does the IRFR5410TRPBF have a built-in diode?
    Yes, it has a built-in diode.
  9. What are some common applications of the IRFR5410TRPBF?
    Common applications include power supplies, motor control systems, switching and linear power amplifiers, and automotive and industrial power systems.
  10. Who is the manufacturer of the IRFR5410TRPBF?
    The manufacturer is Infineon Technologies.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:205mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:58 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:760 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):66W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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In Stock

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MOSFET P-CH 100V 13A DPAK
IRFR5410TRLPBF
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IRFR5410PBF
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Similar Products

Part Number IRFR5410TRPBF IRFR5410TRRPBF IRFR5410TRLPBF
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Not For New Designs Last Time Buy
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc) 13A (Tc) 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 205mOhm @ 7.8A, 10V 205mOhm @ 7.8A, 10V 205mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 58 nC @ 10 V 58 nC @ 10 V 58 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 760 pF @ 25 V 760 pF @ 25 V 760 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 66W (Tc) 66W (Tc) 66W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D-Pak D-Pak D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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