IRF4905STRR
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Infineon Technologies IRF4905STRR

Manufacturer No:
IRF4905STRR
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 55V 74A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF4905STRR is a P-Channel Power MOSFET produced by Infineon Technologies, part of the HEXFET® family. This device is characterized by its high performance and reliability, making it suitable for a wide range of power applications. The IRF4905STRR is available in various packages, including the TO-220 and D2PAK, which are industry-standard through-hole and surface mount packages, respectively.

The MOSFET utilizes advanced process technology to achieve ultra-low on-resistance and fast switching speeds, enhancing its efficiency and reliability in various operational conditions.

Key Specifications

Parameter Min. Typ. Max. Units Conditions
Drain to Source Voltage (Vdss) -55 - -55 V -
Continuous Drain Current (Id) @ 25°C -42 - -42 A Vgs = 10V
Pulsed Drain Current (Idm) - - -74 A Pulse width limited by max. junction temperature
On-Resistance (Rds(on)) @ Id, Vgs - 0.02 0.02 Ω Id = -74A, Vgs = 10V
Gate to Source Voltage (Vgs) - - ±20 V -
Operating Junction Temperature (Tj) -55 - 150 °C -
Thermal Resistance (RθJA) - - 40 °C/W PCB Mount, steady state

Key Features

  • Advanced Process Technology: Utilizes fifth-generation HEXFET® technology for ultra-low on-resistance and fast switching speeds.
  • High Current Capability: Continuous drain current of up to 42A at 25°C and pulsed drain current up to 74A.
  • Low On-Resistance: Rds(on) as low as 0.02Ω, reducing power loss and enhancing efficiency.
  • High Operating Temperature: Junction operating temperature up to 150°C.
  • Repetitive Avalanche Rating: Fully avalanche rated, allowing for reliable operation in demanding applications.
  • Industry Standard Packages: Available in TO-220 and D2PAK packages for ease of design and integration.
  • Lead-Free: Compliant with lead-free requirements, ensuring environmental sustainability.

Applications

  • Power Supplies: Suitable for high-efficiency power supply designs.
  • Motor Drives: Used in DC motor drives and other motor control applications.
  • Lighting and Power Conversion: Ideal for lighting systems and power conversion applications.
  • Load Switches and Battery Powered Applications: Effective in load switching and battery-powered devices.
  • Inverters and SMPS: Applicable in inverter and Switch-Mode Power Supply (SMPS) designs.

Q & A

  1. What is the drain-to-source voltage rating of the IRF4905STRR?

    The drain-to-source voltage (Vdss) rating is -55V.

  2. What is the continuous drain current of the IRF4905STRR at 25°C?

    The continuous drain current (Id) at 25°C is -42A.

  3. What is the on-resistance (Rds(on)) of the IRF4905STRR?

    The on-resistance (Rds(on)) is as low as 0.02Ω at Id = -74A and Vgs = 10V.

  4. What are the operating temperature ranges for the IRF4905STRR?

    The operating junction temperature (Tj) range is from -55°C to 150°C.

  5. Is the IRF4905STRR lead-free?
  6. What are the typical applications of the IRF4905STRR?

    The IRF4905STRR is used in power supplies, motor drives, lighting and power conversion, load switches, and battery-powered applications.

  7. What package types are available for the IRF4905STRR?

    The IRF4905STRR is available in TO-220 and D2PAK packages.

  8. What is the thermal resistance (RθJA) of the IRF4905STRR?

    The thermal resistance (RθJA) is 40°C/W for PCB Mount, steady state.

  9. Is the IRF4905STRR fully avalanche rated?
  10. What is the gate-to-source voltage (Vgs) rating of the IRF4905STRR?

    The gate-to-source voltage (Vgs) rating is ±20V.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:74A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:20mOhm @ 38A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:180 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3400 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.8W (Ta), 200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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