IPW65R041CFDFKSA1
  • Share:

Infineon Technologies IPW65R041CFDFKSA1

Manufacturer No:
IPW65R041CFDFKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Description:
MOSFET N-CH 650V 68.5A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IPW65R041CFDFKSA1 is a 650V N-channel CoolMOS™ Power MOSFET produced by Infineon Technologies. This component is part of the CoolMOS™ CFD2 series, which represents the second generation of high-voltage CoolMOS™ MOSFETs with integrated fast body diodes. The IPW65R041CFDFKSA1 is designed to offer improved energy efficiency and softer commutation behavior, resulting in better EMI performance compared to its predecessors and competitors.

Key Specifications

Parameter Symbol Unit Value
Drain-Source Voltage VDS V 650
Continuous Drain Current ID A 68.5 (at Tj = 25°C), 43.3 (at Tj = 100°C)
Pulsed Drain Current ID,pulsed A 255 (at Tj = 25°C)
Avalanche Energy, Single Pulse EAS mJ 2185
Drain-Source On-State Resistance RDS(on) Tighter RDS(on)max to RDS(on)typ window
Package PG-TO247-3

Key Features

  • 650V technology with integrated fast body diode
  • Limited voltage overshoot during hard commutation
  • Significant Qg reduction compared to 600V CFD technology
  • Tighter RDS(on)max to RDS(on)typ window
  • Easy to design-in
  • Lower price compared to 600V CFD technology
  • Low switching losses due to low Qrr at repetitive commutation on body diode
  • Self-limiting di/dt and dv/dt
  • Low Qoss
  • Reduced turn-on and turn-off delay times
  • Outstanding CoolMOS™ quality

Applications

The IPW65R041CFDFKSA1 is particularly suited for applications that require high efficiency, low switching losses, and robust commutation behavior. These include:

  • Resonant switching applications
  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Industrial and multimarket applications
  • Automotive, aviation, and aerospace systems

Q & A

  1. What is the drain-source voltage rating of the IPW65R041CFDFKSA1?

    The drain-source voltage rating is 650V.

  2. What is the continuous drain current of the IPW65R041CFDFKSA1 at 25°C?

    The continuous drain current is 68.5A at Tj = 25°C.

  3. What is the package type of the IPW65R041CFDFKSA1?

    The package type is PG-TO247-3.

  4. What are the key benefits of the CoolMOS™ CFD2 technology?

    The key benefits include low switching losses, self-limiting di/dt and dv/dt, low Qoss, reduced turn-on and turn-off delay times, and outstanding CoolMOS™ quality).

  5. What types of applications are the IPW65R041CFDFKSA1 suited for?

    The component is suited for resonant switching applications, power supplies, DC-DC converters, motor control and drive systems, and industrial, automotive, aviation, and aerospace systems).

  6. How does the IPW65R041CFDFKSA1 compare to 600V CFD technology?

    The IPW65R041CFDFKSA1 offers significant Qg reduction, tighter RDS(on)max to RDS(on)typ window, and lower price compared to 600V CFD technology).

  7. What is the avalanche energy rating of the IPW65R041CFDFKSA1?

    The avalanche energy rating is 2185 mJ).

  8. Does the IPW65R041CFDFKSA1 have any specific design advantages?

    Yes, it is easy to design-in and offers softer commutation behavior, which improves EMI performance).

  9. What is the pulsed drain current rating of the IPW65R041CFDFKSA1 at 25°C?

    The pulsed drain current rating is 255A at Tj = 25°C).

  10. Is the IPW65R041CFDFKSA1 suitable for life-support devices or systems?

    Yes, the component may be used in life-support devices or systems, as well as in automotive, aviation, and aerospace applications).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:68.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:41mOhm @ 33.1A, 10V
Vgs(th) (Max) @ Id:4.5V @ 3.3mA
Gate Charge (Qg) (Max) @ Vgs:300 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8400 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):500W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3-1
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$17.46
48

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPW65R041CFDFKSA1 IPW65R041CFDFKSA2
Manufacturer Infineon Technologies Infineon Technologies
Product Status Not For New Designs Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 68.5A (Tc) 68.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 41mOhm @ 33.1A, 10V 41mOhm @ 33.1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 3.3mA 4.5V @ 3.3mA
Gate Charge (Qg) (Max) @ Vgs 300 nC @ 10 V 300 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 8400 pF @ 100 V 8400 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 500W (Tc) 500W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO247-3-1 PG-TO247-3
Package / Case TO-247-3 TO-247-3

Related Product By Categories

BSN20BKR
BSN20BKR
Nexperia USA Inc.
MOSFET N-CH 60V 265MA TO236AB
BSC040N10NS5ATMA1
BSC040N10NS5ATMA1
Infineon Technologies
MOSFET N-CH 100V 100A TDSON
STP5NK60Z
STP5NK60Z
STMicroelectronics
MOSFET N-CH 600V 5A TO220AB
STW58N65DM2AG
STW58N65DM2AG
STMicroelectronics
MOSFET N-CH 650V 48A TO247
CSD17575Q3
CSD17575Q3
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
CSD18531Q5AT
CSD18531Q5AT
Texas Instruments
MOSFET N-CH 60V 100A 8VSON
CSD19536KTTT
CSD19536KTTT
Texas Instruments
MOSFET N-CH 100V 200A DDPAK
FQD7P06TM
FQD7P06TM
onsemi
MOSFET P-CH 60V 5.4A DPAK
NTMFS5C612NLT1G
NTMFS5C612NLT1G
onsemi
MOSFET N-CH 60V 36A/235A 5DFN
STP80PF55
STP80PF55
STMicroelectronics
MOSFET P-CH 55V 80A TO220AB
FDN336P-NL
FDN336P-NL
onsemi
MOSFET P-CH 20V 1.3A SUPERSOT3
STS12NH3LL
STS12NH3LL
STMicroelectronics
MOSFET N-CH 30V 12A 8SO

Related Product By Brand

BAS7004SH6327XTSA1
BAS7004SH6327XTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT363
BAS40-06WH6327
BAS40-06WH6327
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BAS 40-04 B5003
BAS 40-04 B5003
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT23
BCX5310E6327HTSA1
BCX5310E6327HTSA1
Infineon Technologies
TRANS PNP 80V 1A SOT89
BC 817-40 E6327
BC 817-40 E6327
Infineon Technologies
TRANS NPN 45V 0.5A SOT23
IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
BSS84P E6433
BSS84P E6433
Infineon Technologies
MOSFET P-CH 60V 170MA SOT23-3
FF600R12ME4CB11BOSA1
FF600R12ME4CB11BOSA1
Infineon Technologies
IGBT MOD 1200V 1060A 4050W
BTN8982TAAUMA1
BTN8982TAAUMA1
Infineon Technologies
IC MOTOR DRIVER PAR TO263-7
BTS3408GXUMA2
BTS3408GXUMA2
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 8SOIC
BSP75NNT
BSP75NNT
Infineon Technologies
IC PWR DRVR N-CHAN 1:1 SOT223-4
S34ML01G100TFI000
S34ML01G100TFI000
Infineon Technologies
IC FLASH 1GBIT PARALLEL 48TSOP I