IPW65R041CFDFKSA1
  • Share:

Infineon Technologies IPW65R041CFDFKSA1

Manufacturer No:
IPW65R041CFDFKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Description:
MOSFET N-CH 650V 68.5A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IPW65R041CFDFKSA1 is a 650V N-channel CoolMOS™ Power MOSFET produced by Infineon Technologies. This component is part of the CoolMOS™ CFD2 series, which represents the second generation of high-voltage CoolMOS™ MOSFETs with integrated fast body diodes. The IPW65R041CFDFKSA1 is designed to offer improved energy efficiency and softer commutation behavior, resulting in better EMI performance compared to its predecessors and competitors.

Key Specifications

Parameter Symbol Unit Value
Drain-Source Voltage VDS V 650
Continuous Drain Current ID A 68.5 (at Tj = 25°C), 43.3 (at Tj = 100°C)
Pulsed Drain Current ID,pulsed A 255 (at Tj = 25°C)
Avalanche Energy, Single Pulse EAS mJ 2185
Drain-Source On-State Resistance RDS(on) Tighter RDS(on)max to RDS(on)typ window
Package PG-TO247-3

Key Features

  • 650V technology with integrated fast body diode
  • Limited voltage overshoot during hard commutation
  • Significant Qg reduction compared to 600V CFD technology
  • Tighter RDS(on)max to RDS(on)typ window
  • Easy to design-in
  • Lower price compared to 600V CFD technology
  • Low switching losses due to low Qrr at repetitive commutation on body diode
  • Self-limiting di/dt and dv/dt
  • Low Qoss
  • Reduced turn-on and turn-off delay times
  • Outstanding CoolMOS™ quality

Applications

The IPW65R041CFDFKSA1 is particularly suited for applications that require high efficiency, low switching losses, and robust commutation behavior. These include:

  • Resonant switching applications
  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Industrial and multimarket applications
  • Automotive, aviation, and aerospace systems

Q & A

  1. What is the drain-source voltage rating of the IPW65R041CFDFKSA1?

    The drain-source voltage rating is 650V.

  2. What is the continuous drain current of the IPW65R041CFDFKSA1 at 25°C?

    The continuous drain current is 68.5A at Tj = 25°C.

  3. What is the package type of the IPW65R041CFDFKSA1?

    The package type is PG-TO247-3.

  4. What are the key benefits of the CoolMOS™ CFD2 technology?

    The key benefits include low switching losses, self-limiting di/dt and dv/dt, low Qoss, reduced turn-on and turn-off delay times, and outstanding CoolMOS™ quality).

  5. What types of applications are the IPW65R041CFDFKSA1 suited for?

    The component is suited for resonant switching applications, power supplies, DC-DC converters, motor control and drive systems, and industrial, automotive, aviation, and aerospace systems).

  6. How does the IPW65R041CFDFKSA1 compare to 600V CFD technology?

    The IPW65R041CFDFKSA1 offers significant Qg reduction, tighter RDS(on)max to RDS(on)typ window, and lower price compared to 600V CFD technology).

  7. What is the avalanche energy rating of the IPW65R041CFDFKSA1?

    The avalanche energy rating is 2185 mJ).

  8. Does the IPW65R041CFDFKSA1 have any specific design advantages?

    Yes, it is easy to design-in and offers softer commutation behavior, which improves EMI performance).

  9. What is the pulsed drain current rating of the IPW65R041CFDFKSA1 at 25°C?

    The pulsed drain current rating is 255A at Tj = 25°C).

  10. Is the IPW65R041CFDFKSA1 suitable for life-support devices or systems?

    Yes, the component may be used in life-support devices or systems, as well as in automotive, aviation, and aerospace applications).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:68.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:41mOhm @ 33.1A, 10V
Vgs(th) (Max) @ Id:4.5V @ 3.3mA
Gate Charge (Qg) (Max) @ Vgs:300 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8400 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):500W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3-1
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$17.46
48

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPW65R041CFDFKSA1 IPW65R041CFDFKSA2
Manufacturer Infineon Technologies Infineon Technologies
Product Status Not For New Designs Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 68.5A (Tc) 68.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 41mOhm @ 33.1A, 10V 41mOhm @ 33.1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 3.3mA 4.5V @ 3.3mA
Gate Charge (Qg) (Max) @ Vgs 300 nC @ 10 V 300 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 8400 pF @ 100 V 8400 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 500W (Tc) 500W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO247-3-1 PG-TO247-3
Package / Case TO-247-3 TO-247-3

Related Product By Categories

BSN20BKR
BSN20BKR
Nexperia USA Inc.
MOSFET N-CH 60V 265MA TO236AB
IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
VN2222LL-G-P003
VN2222LL-G-P003
Microchip Technology
MOSFET N-CH 60V 230MA TO92-3
STD10NM60N
STD10NM60N
STMicroelectronics
MOSFET N-CH 600V 10A DPAK
BUK7Y4R4-40EX
BUK7Y4R4-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 100A LFPAK56
FDMS86520L
FDMS86520L
onsemi
MOSFET N CH 60V 13.5A 8PQFN
STP36NF06L
STP36NF06L
STMicroelectronics
MOSFET N-CH 60V 30A TO220AB
FDBL86063-F085
FDBL86063-F085
onsemi
MOSFET N-CH 100V 240A 8HPSOF
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
NVMFS6H852NLT1G
NVMFS6H852NLT1G
onsemi
MOSFET N-CH 80V 11A/42A 5DFN
PH5030AL,115
PH5030AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 91A LFPAK56
BSS138W-7-F-79
BSS138W-7-F-79
Diodes Incorporated
DIODE

Related Product By Brand

BAS21UE6327HTSA1
BAS21UE6327HTSA1
Infineon Technologies
DIODE ARRAY GP 200V 250MA SC74-6
BAS70-06E6327
BAS70-06E6327
Infineon Technologies
BAS70 - HIGH SPEED SWITCHING, CL
BAS7004SH6327XTSA1
BAS7004SH6327XTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT363
BAS40-06WH6327
BAS40-06WH6327
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BC817UPNB6327XT
BC817UPNB6327XT
Infineon Technologies
TRANS NPN/PNP 45V 0.5A SC74-6
BC859-C
BC859-C
Infineon Technologies
TRANS PNP 30V 0.1A SOT23-3
BC858BE6327HTSA1
BC858BE6327HTSA1
Infineon Technologies
TRANS PNP 30V 0.1A SOT-23
BC857CWE6433HTMA1
BC857CWE6433HTMA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT323
BC847BWE6433HTMA1
BC847BWE6433HTMA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
TLE72593GEXUMA1
TLE72593GEXUMA1
Infineon Technologies
IC TRANSCEIVER 1/1 DSO-8
IRS21867STRPBF
IRS21867STRPBF
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 8SOIC
BTS428L2XT
BTS428L2XT
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO252-5