IPW65R041CFDFKSA1
  • Share:

Infineon Technologies IPW65R041CFDFKSA1

Manufacturer No:
IPW65R041CFDFKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Description:
MOSFET N-CH 650V 68.5A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IPW65R041CFDFKSA1 is a 650V N-channel CoolMOS™ Power MOSFET produced by Infineon Technologies. This component is part of the CoolMOS™ CFD2 series, which represents the second generation of high-voltage CoolMOS™ MOSFETs with integrated fast body diodes. The IPW65R041CFDFKSA1 is designed to offer improved energy efficiency and softer commutation behavior, resulting in better EMI performance compared to its predecessors and competitors.

Key Specifications

Parameter Symbol Unit Value
Drain-Source Voltage VDS V 650
Continuous Drain Current ID A 68.5 (at Tj = 25°C), 43.3 (at Tj = 100°C)
Pulsed Drain Current ID,pulsed A 255 (at Tj = 25°C)
Avalanche Energy, Single Pulse EAS mJ 2185
Drain-Source On-State Resistance RDS(on) Tighter RDS(on)max to RDS(on)typ window
Package PG-TO247-3

Key Features

  • 650V technology with integrated fast body diode
  • Limited voltage overshoot during hard commutation
  • Significant Qg reduction compared to 600V CFD technology
  • Tighter RDS(on)max to RDS(on)typ window
  • Easy to design-in
  • Lower price compared to 600V CFD technology
  • Low switching losses due to low Qrr at repetitive commutation on body diode
  • Self-limiting di/dt and dv/dt
  • Low Qoss
  • Reduced turn-on and turn-off delay times
  • Outstanding CoolMOS™ quality

Applications

The IPW65R041CFDFKSA1 is particularly suited for applications that require high efficiency, low switching losses, and robust commutation behavior. These include:

  • Resonant switching applications
  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Industrial and multimarket applications
  • Automotive, aviation, and aerospace systems

Q & A

  1. What is the drain-source voltage rating of the IPW65R041CFDFKSA1?

    The drain-source voltage rating is 650V.

  2. What is the continuous drain current of the IPW65R041CFDFKSA1 at 25°C?

    The continuous drain current is 68.5A at Tj = 25°C.

  3. What is the package type of the IPW65R041CFDFKSA1?

    The package type is PG-TO247-3.

  4. What are the key benefits of the CoolMOS™ CFD2 technology?

    The key benefits include low switching losses, self-limiting di/dt and dv/dt, low Qoss, reduced turn-on and turn-off delay times, and outstanding CoolMOS™ quality).

  5. What types of applications are the IPW65R041CFDFKSA1 suited for?

    The component is suited for resonant switching applications, power supplies, DC-DC converters, motor control and drive systems, and industrial, automotive, aviation, and aerospace systems).

  6. How does the IPW65R041CFDFKSA1 compare to 600V CFD technology?

    The IPW65R041CFDFKSA1 offers significant Qg reduction, tighter RDS(on)max to RDS(on)typ window, and lower price compared to 600V CFD technology).

  7. What is the avalanche energy rating of the IPW65R041CFDFKSA1?

    The avalanche energy rating is 2185 mJ).

  8. Does the IPW65R041CFDFKSA1 have any specific design advantages?

    Yes, it is easy to design-in and offers softer commutation behavior, which improves EMI performance).

  9. What is the pulsed drain current rating of the IPW65R041CFDFKSA1 at 25°C?

    The pulsed drain current rating is 255A at Tj = 25°C).

  10. Is the IPW65R041CFDFKSA1 suitable for life-support devices or systems?

    Yes, the component may be used in life-support devices or systems, as well as in automotive, aviation, and aerospace applications).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:68.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:41mOhm @ 33.1A, 10V
Vgs(th) (Max) @ Id:4.5V @ 3.3mA
Gate Charge (Qg) (Max) @ Vgs:300 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8400 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):500W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3-1
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$17.46
48

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPW65R041CFDFKSA1 IPW65R041CFDFKSA2
Manufacturer Infineon Technologies Infineon Technologies
Product Status Not For New Designs Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 68.5A (Tc) 68.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 41mOhm @ 33.1A, 10V 41mOhm @ 33.1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 3.3mA 4.5V @ 3.3mA
Gate Charge (Qg) (Max) @ Vgs 300 nC @ 10 V 300 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 8400 pF @ 100 V 8400 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 500W (Tc) 500W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO247-3-1 PG-TO247-3
Package / Case TO-247-3 TO-247-3

Related Product By Categories

FQD2N90TM
FQD2N90TM
onsemi
MOSFET N-CH 900V 1.7A DPAK
2N7002W
2N7002W
Diotec Semiconductor
MOSFET, SOT-323, 60V, 0.115A, N,
STP3NK80Z
STP3NK80Z
STMicroelectronics
MOSFET N-CH 800V 2.5A TO220AB
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
STB80NF55-06T4
STB80NF55-06T4
STMicroelectronics
MOSFET N-CH 55V 80A D2PAK
STF5N95K5
STF5N95K5
STMicroelectronics
MOSFET N-CH 950V 3.5A TO220FP
STB33N60M2
STB33N60M2
STMicroelectronics
MOSFET N-CH 600V 26A D2PAK
BSS138K
BSS138K
onsemi
MOSFET N-CH 50V 220MA SOT23-3
STW88N65M5-4
STW88N65M5-4
STMicroelectronics
MOSFET N-CH 650V 84A TO247-4L
STW15NB50
STW15NB50
STMicroelectronics
MOSFET N-CH 500V 14.6A TO247-3
FDB075N15A_SN00284
FDB075N15A_SN00284
onsemi
MOSFET N-CH 150V 130A D2PAK
NTNS3A65PZT5G
NTNS3A65PZT5G
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

BTS70302EPADAUGHBRDTOBO1
BTS70302EPADAUGHBRDTOBO1
Infineon Technologies
PROFET +2 12V BTS7030-2EPA DAUGH
BAS40-06WE6327
BAS40-06WE6327
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BAS4007WH6327
BAS4007WH6327
Infineon Technologies
SCHOTTKY DIODE
BAV99SH6433XTMA1
BAV99SH6433XTMA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT363
BAV 70W E6433
BAV 70W E6433
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT323
BAS40B5000
BAS40B5000
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BC848B-E6327
BC848B-E6327
Infineon Technologies
TRANS NPN 30V 0.1A SOT23
BC 817-25W E6327
BC 817-25W E6327
Infineon Technologies
TRANS NPN 45V 0.5A SOT323
IRF7240TRPBF
IRF7240TRPBF
Infineon Technologies
MOSFET P-CH 40V 10.5A 8SO
IRFP4468PBFXKMA1
IRFP4468PBFXKMA1
Infineon Technologies
TRENCH >=100V PG-TO247-3
IKW50N60T
IKW50N60T
Infineon Technologies
IKW50N60 - DISCRETE IGBT WITH AN
IR3898MTRPBF
IR3898MTRPBF
Infineon Technologies
IC REG BUCK ADJUSTABLE 6A 16PQFN