IPW65R041CFDFKSA1
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Infineon Technologies IPW65R041CFDFKSA1

Manufacturer No:
IPW65R041CFDFKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Description:
MOSFET N-CH 650V 68.5A TO247-3
Delivery:
Payment:
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Product Introduction

Overview

The IPW65R041CFDFKSA1 is a 650V N-channel CoolMOS™ Power MOSFET produced by Infineon Technologies. This component is part of the CoolMOS™ CFD2 series, which represents the second generation of high-voltage CoolMOS™ MOSFETs with integrated fast body diodes. The IPW65R041CFDFKSA1 is designed to offer improved energy efficiency and softer commutation behavior, resulting in better EMI performance compared to its predecessors and competitors.

Key Specifications

Parameter Symbol Unit Value
Drain-Source Voltage VDS V 650
Continuous Drain Current ID A 68.5 (at Tj = 25°C), 43.3 (at Tj = 100°C)
Pulsed Drain Current ID,pulsed A 255 (at Tj = 25°C)
Avalanche Energy, Single Pulse EAS mJ 2185
Drain-Source On-State Resistance RDS(on) Tighter RDS(on)max to RDS(on)typ window
Package PG-TO247-3

Key Features

  • 650V technology with integrated fast body diode
  • Limited voltage overshoot during hard commutation
  • Significant Qg reduction compared to 600V CFD technology
  • Tighter RDS(on)max to RDS(on)typ window
  • Easy to design-in
  • Lower price compared to 600V CFD technology
  • Low switching losses due to low Qrr at repetitive commutation on body diode
  • Self-limiting di/dt and dv/dt
  • Low Qoss
  • Reduced turn-on and turn-off delay times
  • Outstanding CoolMOS™ quality

Applications

The IPW65R041CFDFKSA1 is particularly suited for applications that require high efficiency, low switching losses, and robust commutation behavior. These include:

  • Resonant switching applications
  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Industrial and multimarket applications
  • Automotive, aviation, and aerospace systems

Q & A

  1. What is the drain-source voltage rating of the IPW65R041CFDFKSA1?

    The drain-source voltage rating is 650V.

  2. What is the continuous drain current of the IPW65R041CFDFKSA1 at 25°C?

    The continuous drain current is 68.5A at Tj = 25°C.

  3. What is the package type of the IPW65R041CFDFKSA1?

    The package type is PG-TO247-3.

  4. What are the key benefits of the CoolMOS™ CFD2 technology?

    The key benefits include low switching losses, self-limiting di/dt and dv/dt, low Qoss, reduced turn-on and turn-off delay times, and outstanding CoolMOS™ quality).

  5. What types of applications are the IPW65R041CFDFKSA1 suited for?

    The component is suited for resonant switching applications, power supplies, DC-DC converters, motor control and drive systems, and industrial, automotive, aviation, and aerospace systems).

  6. How does the IPW65R041CFDFKSA1 compare to 600V CFD technology?

    The IPW65R041CFDFKSA1 offers significant Qg reduction, tighter RDS(on)max to RDS(on)typ window, and lower price compared to 600V CFD technology).

  7. What is the avalanche energy rating of the IPW65R041CFDFKSA1?

    The avalanche energy rating is 2185 mJ).

  8. Does the IPW65R041CFDFKSA1 have any specific design advantages?

    Yes, it is easy to design-in and offers softer commutation behavior, which improves EMI performance).

  9. What is the pulsed drain current rating of the IPW65R041CFDFKSA1 at 25°C?

    The pulsed drain current rating is 255A at Tj = 25°C).

  10. Is the IPW65R041CFDFKSA1 suitable for life-support devices or systems?

    Yes, the component may be used in life-support devices or systems, as well as in automotive, aviation, and aerospace applications).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:68.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:41mOhm @ 33.1A, 10V
Vgs(th) (Max) @ Id:4.5V @ 3.3mA
Gate Charge (Qg) (Max) @ Vgs:300 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8400 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):500W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3-1
Package / Case:TO-247-3
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Similar Products

Part Number IPW65R041CFDFKSA1 IPW65R041CFDFKSA2
Manufacturer Infineon Technologies Infineon Technologies
Product Status Not For New Designs Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 68.5A (Tc) 68.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 41mOhm @ 33.1A, 10V 41mOhm @ 33.1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 3.3mA 4.5V @ 3.3mA
Gate Charge (Qg) (Max) @ Vgs 300 nC @ 10 V 300 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 8400 pF @ 100 V 8400 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 500W (Tc) 500W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO247-3-1 PG-TO247-3
Package / Case TO-247-3 TO-247-3

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