IPW65R041CFDFKSA2
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Infineon Technologies IPW65R041CFDFKSA2

Manufacturer No:
IPW65R041CFDFKSA2
Manufacturer:
Infineon Technologies
Package:
Tube
Description:
MOSFET N-CH 650V 68.5A TO247-3
Delivery:
Payment:
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Product Introduction

Overview

The IPW65R041CFDFKSA2 is a high-performance N-Channel power MOSFET produced by Infineon Technologies. This component is designed for high-power applications requiring efficient switching and robust reliability. It features a through-hole package (PG-TO247-3) and is suitable for various industrial and automotive uses.

Key Specifications

ParameterValue
Voltage Rating (Vds)650 V
Continuous Drain Current (Id)68.5 A (at Tc)
Power Dissipation (Pd)500 W (at Tc)
Package TypeThrough Hole PG-TO247-3
Channel TypeN-Channel

Key Features

  • High voltage rating of 650 V, making it suitable for high-power applications.
  • Continuous drain current of 68.5 A at case temperature (Tc), ensuring high current handling capability.
  • High power dissipation of 500 W at Tc, allowing for efficient heat management.
  • Through-hole package (PG-TO247-3) for easy mounting and robust mechanical stability.
  • Low on-state resistance and fast switching times, enhancing overall system efficiency.

Applications

  • Industrial power supplies and converters.
  • Automotive systems, including electric vehicles and hybrid vehicles.
  • Motor control and drive systems.
  • Renewable energy systems, such as solar and wind power inverters.
  • High-power switching applications requiring reliability and efficiency.

Q & A

  1. What is the voltage rating of the IPW65R041CFDFKSA2 MOSFET?
    The voltage rating is 650 V.
  2. What is the continuous drain current of the IPW65R041CFDFKSA2?
    The continuous drain current is 68.5 A at case temperature (Tc).
  3. What is the power dissipation of the IPW65R041CFDFKSA2?
    The power dissipation is 500 W at Tc.
  4. What type of package does the IPW65R041CFDFKSA2 use?
    The package type is Through Hole PG-TO247-3.
  5. Is the IPW65R041CFDFKSA2 suitable for automotive applications?
    Yes, it is suitable for automotive systems, including electric and hybrid vehicles.
  6. What are some common applications of the IPW65R041CFDFKSA2?
    Common applications include industrial power supplies, motor control systems, and renewable energy systems.
  7. What are the key features of the IPW65R041CFDFKSA2?
    Key features include high voltage rating, high continuous drain current, high power dissipation, and a robust through-hole package.
  8. Where can I find detailed specifications for the IPW65R041CFDFKSA2?
    Detailed specifications can be found on the datasheet available from Infineon Technologies, Digi-Key, Mouser Electronics, and other authorized distributors.
  9. Is the IPW65R041CFDFKSA2 available for immediate shipment?
    Yes, it is available for immediate shipment from various distributors like Digi-Key and Mouser Electronics.
  10. What is the return policy for the IPW65R041CFDFKSA2?
    Many distributors offer a 30-day return policy for this product.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:68.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:41mOhm @ 33.1A, 10V
Vgs(th) (Max) @ Id:4.5V @ 3.3mA
Gate Charge (Qg) (Max) @ Vgs:300 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8400 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):500W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3
Package / Case:TO-247-3
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Similar Products

Part Number IPW65R041CFDFKSA2 IPW65R041CFDFKSA1
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 68.5A (Tc) 68.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 41mOhm @ 33.1A, 10V 41mOhm @ 33.1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 3.3mA 4.5V @ 3.3mA
Gate Charge (Qg) (Max) @ Vgs 300 nC @ 10 V 300 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 8400 pF @ 100 V 8400 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 500W (Tc) 500W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO247-3 PG-TO247-3-1
Package / Case TO-247-3 TO-247-3

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