BSC035N10NS5ATMA1
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Infineon Technologies BSC035N10NS5ATMA1

Manufacturer No:
BSC035N10NS5ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 100A TDSON
Delivery:
Payment:
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Product Introduction

Overview

The BSC035N10NS5ATMA1 is a high-performance N-channel MOSFET produced by Infineon Technologies. Designed for power management applications, this MOSFET is part of Infineon's OptiMOS™ 5 family, which is renowned for its low on-resistance and high switching efficiency. The BSC035N10NS5ATMA1 is specifically targeted at applications requiring high power density and energy efficiency, such as DC-DC converters, motor drives, and synchronous rectification. Its compact design and advanced technology make it a competitive choice for modern power electronics systems.

Key Specifications

ParameterValueUnitNotes
Drain-Source Voltage (VDS)100V
Continuous Drain Current (ID)35A
On-Resistance (RDS(on))3.5VGS = 10 V
Gate-Source Voltage (VGS)±20V
Power Dissipation (PD)83W
Operating Junction Temperature (TJ)-55 to +175°C
PackageTO-263 (D2PAK)

Key Features

  • Low On-Resistance: Minimizes conduction losses, enhancing efficiency.
  • High Switching Speed: Optimized for fast switching applications.
  • Robust Thermal Performance: Designed to handle high power dissipation.
  • Compact Package: TO-263 (D2PAK) ensures space-saving integration.
  • Wide Operating Temperature Range: Suitable for harsh environments.

Applications

The BSC035N10NS5ATMA1 is widely used in various power management applications, including:

  • DC-DC Converters: Enhances efficiency in step-up or step-down voltage conversion.
  • Motor Drives: Provides reliable switching for motor control systems.
  • Synchronous Rectification: Reduces losses in power supply circuits.
  • Industrial Automation: Supports high-power applications in industrial equipment.
  • Consumer Electronics: Ideal for compact, energy-efficient designs.

Q & A

1. What is the maximum drain-source voltage for the BSC035N10NS5ATMA1?

The maximum drain-source voltage (VDS) is 100 V.

2. What is the typical on-resistance of this MOSFET?

The typical on-resistance (RDS(on)) is 3.5 mΩ at VGS = 10 V.

3. Can this MOSFET handle high currents?

Yes, it supports a continuous drain current (ID) of up to 35 A.

4. What package does the BSC035N10NS5ATMA1 use?

It uses the TO-263 (D2PAK) package.

5. Is this MOSFET suitable for high-temperature environments?

Yes, it operates within a junction temperature range of -55°C to +175°C.

6. What is the gate-source voltage range?

The gate-source voltage (VGS) range is ±20 V.

7. What are the primary applications of this MOSFET?

It is used in DC-DC converters, motor drives, synchronous rectification, and industrial automation.

8. How does this MOSFET improve efficiency?

Its low on-resistance and high switching speed minimize energy losses.

9. Is the BSC035N10NS5ATMA1 RoHS compliant?

Yes, it is RoHS compliant.

10. What makes the OptiMOS™ 5 family unique?

The OptiMOS™ 5 family is known for its low on-resistance, high switching efficiency, and robust thermal performance.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:3.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:3.8V @ 115µA
Gate Charge (Qg) (Max) @ Vgs:87 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6500 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 156W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-7
Package / Case:8-PowerTDFN
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In Stock

$3.84
215

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