Overview
The BC846BWE6327HTSA1 is a general-purpose NPN bipolar junction transistor (BJT) produced by Infineon Technologies. This transistor is designed for a wide range of applications requiring low to medium power amplification and switching. It is packaged in the SC-70 (SOT-323) case, making it suitable for surface mount technology (SMT) assembly. The BC846BWE6327HTSA1 is known for its high current gain, low noise, and robust thermal characteristics, making it a reliable choice for various electronic circuits.
Key Specifications
| Characteristic | Value | Unit |
|---|---|---|
| Transistor Type | NPN | - |
| Current - Collector (Ic) (Max) | 100 | mA |
| Voltage - Collector Emitter Breakdown (Max) | 65 | V |
| Collector-Base Breakdown Voltage (V(BR)CBO) | 80 | V |
| Emitter-Base Breakdown Voltage (V(BR)EBO) | 6 | V |
| DC Current Gain (hFE) | 200 (Min) | - |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 0.25 (Typ) | V |
| Base-Emitter Saturation Voltage (VBE(sat)) | 0.7 (Typ) | V |
| Maximum Power Dissipation | 330 | mW |
| Operating Temperature Range | -65 to +150 | °C |
| Package Type | SC-70 (SOT-323) | - |
| Number of Pins | 3 | - |
Key Features
- High DC current gain (hFE) of up to 200, ensuring reliable amplification.
- Low collector-emitter saturation voltage (VCE(sat)) of 0.25 V, reducing power losses in switching applications.
- Robust breakdown voltages: V(BR)CEO = 65 V, V(BR)CBO = 80 V, and V(BR)EBO = 6 V, providing protection against voltage spikes.
- Wide operating temperature range from -65°C to +150°C, making it suitable for various environmental conditions.
- Compact SC-70 (SOT-323) package, ideal for surface mount technology and space-constrained designs.
- RoHS compliant, ensuring environmental sustainability.
Applications
The BC846BWE6327HTSA1 is versatile and can be used in a variety of applications, including:
- General-purpose amplification and switching circuits.
- Audio and video amplifiers.
- Power supplies and voltage regulators.
- Automotive and industrial control systems.
- Consumer electronics such as TVs, radios, and other household appliances.
Q & A
- What is the maximum collector current of the BC846BWE6327HTSA1?
The maximum collector current is 100 mA. - What is the collector-emitter breakdown voltage of this transistor?
The collector-emitter breakdown voltage is 65 V. - What is the typical DC current gain (hFE) of the BC846BWE6327HTSA1?
The typical DC current gain (hFE) is 200. - What is the operating temperature range of this transistor?
The operating temperature range is from -65°C to +150°C. - Is the BC846BWE6327HTSA1 RoHS compliant?
Yes, it is RoHS compliant. - What is the package type of the BC846BWE6327HTSA1?
The package type is SC-70 (SOT-323). - What is the maximum power dissipation of this transistor?
The maximum power dissipation is 330 mW. - What are some common applications of the BC846BWE6327HTSA1?
It is used in general-purpose amplification, switching circuits, audio and video amplifiers, power supplies, and automotive and industrial control systems. - How many pins does the BC846BWE6327HTSA1 have?
It has 3 pins. - What is the base-emitter saturation voltage (VBE(sat)) of this transistor?
The base-emitter saturation voltage (VBE(sat)) is typically 0.7 V.
