MMBF170Q-7-F
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Diodes Incorporated MMBF170Q-7-F

Manufacturer No:
MMBF170Q-7-F
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 500MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The MMBF170Q-7-F is an N-Channel Enhancement Mode MOSFET produced by Diodes Incorporated. This device is designed to offer high efficiency and superior switching performance, making it ideal for various power-management applications. The MOSFET features a low on-state resistance (RDS(ON)), low gate threshold voltage, low input capacitance, and fast switching speed, which are crucial for high-performance electronic systems.

Key Specifications

Characteristic Symbol Value Unit
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage (Continuous/Pulsed) VGSS ±20 / ±40 V
Continuous Drain Current ID 200 mA
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM 800 mA
Total Power Dissipation PD 300 mW
Thermal Resistance, Junction to Ambient RθJA 417 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Gate Threshold Voltage VGS(th) 0.8 to 3.0 V
Static Drain-Source On-Resistance RDS(ON) 5.0 Ω @ VGS = 10V, ID = 200mA
Package SOT23

Key Features

  • Low On-Resistance: Minimized RDS(ON) for high-efficiency power management.
  • Low Gate Threshold Voltage: Ensures easy switching and low power consumption.
  • Low Input Capacitance: Reduces the impact on high-frequency operations.
  • Fast Switching Speed: Ideal for applications requiring quick response times.
  • Low Input/Output Leakage: Minimizes power loss during idle states.
  • Totally Lead-Free & Fully RoHS Compliant: Meets environmental and regulatory standards.
  • Halogen and Antimony Free: Compliant with 'Green' device standards.
  • Qualified to JEDEC Standards: Ensures high reliability and quality.

Applications

  • Motor Controls: Suitable for motor drive applications due to its fast switching and low on-resistance.
  • Power-Management Functions: Ideal for DC-DC conversion, load switching, and battery protection.
  • Automotive Applications: An automotive-compliant version (MMBF170Q) is available for use in vehicle systems.
  • Backlighting and Audio Circuits: Can be used in various consumer electronics for efficient power management.
  • Battery Chargers: Suitable for battery charging circuits due to its low power consumption and fast switching.

Q & A

  1. What is the maximum drain-source voltage of the MMBF170Q-7-F MOSFET?

    The maximum drain-source voltage (VDSS) is 60V.

  2. What is the gate threshold voltage range of the MMBF170Q-7-F?

    The gate threshold voltage (VGS(th)) ranges from 0.8V to 3.0V.

  3. What is the typical on-state resistance of the MMBF170Q-7-F at VGS = 10V and ID = 200mA?

    The typical on-state resistance (RDS(ON)) is 5.0 Ω.

  4. What is the maximum continuous drain current of the MMBF170Q-7-F?

    The maximum continuous drain current (ID) is 200 mA.

  5. What is the thermal resistance, junction to ambient, of the MMBF170Q-7-F?

    The thermal resistance, junction to ambient (RθJA), is 417 °C/W.

  6. Is the MMBF170Q-7-F RoHS compliant?

    Yes, the MMBF170Q-7-F is fully RoHS compliant and lead-free.

  7. What package type is used for the MMBF170Q-7-F?

    The MMBF170Q-7-F is packaged in a SOT23 package.

  8. What are some typical applications of the MMBF170Q-7-F?

    Typical applications include motor controls, power-management functions, automotive systems, backlighting, and audio circuits.

  9. Is the MMBF170Q-7-F suitable for high-frequency operations?

    Yes, due to its low input capacitance, it is suitable for high-frequency operations.

  10. Does the MMBF170Q-7-F meet automotive standards?

    Yes, an automotive-compliant version of the MMBF170Q is available.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:40 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):300mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
MMBF170Q-13-F
MMBF170Q-13-F
MOSFET N-CH 60V 500MA SOT23

Similar Products

Part Number MMBF170Q-7-F MMBF170-7-F
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 500mA (Ta) 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 200mA, 10V 5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 40 pF @ 10 V 40 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 300mW (Ta) 300mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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