Overview
The 2N7002E-7-F-79 is a small-signal N-channel enhancement mode MOSFET produced by Diodes Incorporated. This component is part of Diodes' extensive MOSFET portfolio, which is designed to meet various application requirements with high performance and efficiency.
Key Specifications
| Parameter | Value |
|---|---|
| VDS (Drain-Source Voltage) | 60 V |
| VGS (Gate-Source Voltage) | ±20 V |
| ID (Continuous Drain Current) | 230 mA |
| RDS(ON) (On-Resistance) | Typically 2.5 Ω at VGS = 10 V |
| PD (Power Dissipation) | 350 mW |
| Package | SOT-23 |
Key Features
- Small-signal N-channel enhancement mode MOSFET
- Low on-resistance (RDS(ON)) for efficient switching
- High current capability and low power dissipation
- SOT-23 package for compact design
- Suitable for a wide range of applications including switching and amplification
Applications
- General-purpose switching
- Amplifier circuits
- Power management in small electronic devices
- Automotive and industrial control systems
- Consumer electronics such as audio and video equipment
Q & A
- What is the maximum drain-source voltage for the 2N7002E-7-F-79 MOSFET?
The maximum drain-source voltage is 60 V. - What is the typical on-resistance of the 2N7002E-7-F-79?
The typical on-resistance is 2.5 Ω at VGS = 10 V. - What is the continuous drain current rating for this MOSFET?
The continuous drain current rating is 230 mA. - In what package is the 2N7002E-7-F-79 available?
The 2N7002E-7-F-79 is available in the SOT-23 package. - What are some common applications for the 2N7002E-7-F-79?
Common applications include general-purpose switching, amplifier circuits, power management in small electronic devices, automotive and industrial control systems, and consumer electronics. - Is the 2N7002E-7-F-79 still in production?
No, the 2N7002E-7-F-79 has been discontinued by Diodes Incorporated and is no longer available for new orders. - What is the recommended replacement part for the 2N7002E-7-F-79?
The recommended replacement part is the 2N7002E-7-F. - What is the maximum gate-source voltage for this MOSFET?
The maximum gate-source voltage is ±20 V. - What is the power dissipation rating for the 2N7002E-7-F-79?
The power dissipation rating is 350 mW. - Why is the 2N7002E-7-F-79 suitable for switching applications?
The 2N7002E-7-F-79 is suitable for switching applications due to its low on-resistance and high current capability.
