2N7002E-7-F-79
  • Share:

Diodes Incorporated 2N7002E-7-F-79

Manufacturer No:
2N7002E-7-F-79
Manufacturer:
Diodes Incorporated
Package:
Bulk
Description:
DIODE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002E-7-F-79 is a small-signal N-channel enhancement mode MOSFET produced by Diodes Incorporated. This component is part of Diodes' extensive MOSFET portfolio, which is designed to meet various application requirements with high performance and efficiency.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)60 V
VGS (Gate-Source Voltage)±20 V
ID (Continuous Drain Current)230 mA
RDS(ON) (On-Resistance)Typically 2.5 Ω at VGS = 10 V
PD (Power Dissipation)350 mW
PackageSOT-23

Key Features

  • Small-signal N-channel enhancement mode MOSFET
  • Low on-resistance (RDS(ON)) for efficient switching
  • High current capability and low power dissipation
  • SOT-23 package for compact design
  • Suitable for a wide range of applications including switching and amplification

Applications

  • General-purpose switching
  • Amplifier circuits
  • Power management in small electronic devices
  • Automotive and industrial control systems
  • Consumer electronics such as audio and video equipment

Q & A

  1. What is the maximum drain-source voltage for the 2N7002E-7-F-79 MOSFET?
    The maximum drain-source voltage is 60 V.
  2. What is the typical on-resistance of the 2N7002E-7-F-79?
    The typical on-resistance is 2.5 Ω at VGS = 10 V.
  3. What is the continuous drain current rating for this MOSFET?
    The continuous drain current rating is 230 mA.
  4. In what package is the 2N7002E-7-F-79 available?
    The 2N7002E-7-F-79 is available in the SOT-23 package.
  5. What are some common applications for the 2N7002E-7-F-79?
    Common applications include general-purpose switching, amplifier circuits, power management in small electronic devices, automotive and industrial control systems, and consumer electronics.
  6. Is the 2N7002E-7-F-79 still in production?
    No, the 2N7002E-7-F-79 has been discontinued by Diodes Incorporated and is no longer available for new orders.
  7. What is the recommended replacement part for the 2N7002E-7-F-79?
    The recommended replacement part is the 2N7002E-7-F.
  8. What is the maximum gate-source voltage for this MOSFET?
    The maximum gate-source voltage is ±20 V.
  9. What is the power dissipation rating for the 2N7002E-7-F-79?
    The power dissipation rating is 350 mW.
  10. Why is the 2N7002E-7-F-79 suitable for switching applications?
    The 2N7002E-7-F-79 is suitable for switching applications due to its low on-resistance and high current capability.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.23 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):370mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

-
459

Please send RFQ , we will respond immediately.

Same Series
RD15S10H00/AA
RD15S10H00/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20JVL0/AA
DD15S20JVL0/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LVL0/AA
DD15S20LVL0/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE2X/AA
CBC13W3S10HE2X/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2000X
DD26S2000X
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20WE3S/AA
DD15S20WE3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HES/AA
CBC9W4S10HES/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S200V30
DD26S200V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T2X/AA
DD26S2S50T2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HV50/AA
DD26S10HV50/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S50V5X/AA
DD26S2S50V5X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V5X
DD26S2S50V5X
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number 2N7002E-7-F-79 2N7002T-7-F-79
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 250mA (Ta) 115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 3Ohm @ 250mA, 10V 7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.23 nC @ 4.5 V -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V 50 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 370mW (Ta) 150mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-523
Package / Case TO-236-3, SC-59, SOT-23-3 SOT-523

Related Product By Categories

NTLJF4156NT1G
NTLJF4156NT1G
onsemi
MOSFET N-CH 30V 2.5A 6WDFN
STP13NK60Z
STP13NK60Z
STMicroelectronics
MOSFET N-CH 600V 13A TO220AB
STB36NM60ND
STB36NM60ND
STMicroelectronics
MOSFET N-CH 600V 29A D2PAK
FDMT80040DC
FDMT80040DC
onsemi
MOSFET N-CH 40V 420A 8PQFN
2N7002 TR PBFREE
2N7002 TR PBFREE
Central Semiconductor Corp
MOSFET N-CH 60V 115MA SOT23
NVR5198NLT1G
NVR5198NLT1G
onsemi
MOSFET N-CH 60V 1.7A SOT23-3
CSD18531Q5AT
CSD18531Q5AT
Texas Instruments
MOSFET N-CH 60V 100A 8VSON
STP3NK90Z
STP3NK90Z
STMicroelectronics
MOSFET N-CH 900V 3A TO220AB
STW20N95K5
STW20N95K5
STMicroelectronics
MOSFET N-CH 950V 17.5A TO247-3
STP14NK60ZFP
STP14NK60ZFP
STMicroelectronics
MOSFET N-CH 600V 13.5A TO220FP
PH1930AL,115
PH1930AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
BSS138W-7-F-79
BSS138W-7-F-79
Diodes Incorporated
DIODE

Related Product By Brand

BAV70DW-7-F
BAV70DW-7-F
Diodes Incorporated
DIODE ARRAY GP 75V 150MA SOT363
BAW56-7-F-31
BAW56-7-F-31
Diodes Incorporated
DIODE ARRAY GP SOT23
BAS16-7-F
BAS16-7-F
Diodes Incorporated
DIODE GEN PURP 75V 200MA SOT23-3
LL4148-13
LL4148-13
Diodes Incorporated
DIODE GP 75V 150MA MINI MELF
BAS40W-7
BAS40W-7
Diodes Incorporated
DIODE SCHOTTKY 40V 200MA SOT323
BAS16W-7-G
BAS16W-7-G
Diodes Incorporated
DIODE GEN PURP SOT323
BZX84C39S-7
BZX84C39S-7
Diodes Incorporated
DIODE ZENER ARRAY 39V SOT363
BZT52HC30WF-7
BZT52HC30WF-7
Diodes Incorporated
DIODE ZENER 30V 375MW SOD123F
BZX84C2V7T-7-F
BZX84C2V7T-7-F
Diodes Incorporated
DIODE ZENER 2.7V 150MW SOT523
BZX84C6V2T-7-F
BZX84C6V2T-7-F
Diodes Incorporated
DIODE ZENER 6.2V 150MW SOT523
MMBT2222AQ-7-F
MMBT2222AQ-7-F
Diodes Incorporated
SS MID-PERF TRANSISTOR SOT23 T&R
2N7002T-7-G
2N7002T-7-G
Diodes Incorporated
MOSFET N-CH 60V SOT523