CSD19538Q2T
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Texas Instruments CSD19538Q2T

Manufacturer No:
CSD19538Q2T
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 13.1A 6WSON
Delivery:
Payment:
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Product Introduction

Overview

The CSD19538Q2T is a 100V N-Channel NexFET™ power MOSFET produced by Texas Instruments. This device is designed to minimize losses in power conversion applications, making it highly efficient for various power management needs. It features a compact SON 2mm × 2mm plastic package, which enhances thermal performance and reduces space requirements in modern electronic designs.

Key Specifications

Parameter Test Conditions Typical Value Unit
VDS - Drain-to-Source Voltage VGS = 0V, ID = 250μA 100 V
VGS - Gate-to-Source Voltage ±20 V
ID - Continuous Drain Current (Package Limited) 14.4 A
ID - Continuous Drain Current (Silicon Limited), TC = 25°C 13.1 A
IDM - Pulsed Drain Current 34.4 A
VGS(th) - Threshold Voltage VDS = VGS, ID = 250μA 3.2 V
RDS(on) - Drain-to-Source On Resistance (VGS = 6V) ID = 5 A 58
RDS(on) - Drain-to-Source On Resistance (VGS = 10V) ID = 5 A 49
Qg - Gate Charge Total (10V) 4.3 nC
Qgd - Gate Charge Gate-to-Drain 0.8 nC
TJ - Operating Junction Temperature -55 to 150 °C
RθJA - Thermal Resistance (Junction to Ambient) 50 °C/W

Key Features

  • Ultra-low Qg and Qgd for reduced switching losses.
  • Low thermal resistance due to the compact SON 2mm × 2mm plastic package.
  • Avalanche rated, ensuring robust performance under high-stress conditions.
  • Lead-free, RoHS compliant, and halogen-free, making it environmentally friendly.

Applications

  • Power over Ethernet (PoE) systems.
  • Power Sourcing Equipment (PSE).
  • Motor control applications.

Q & A

  1. What is the maximum drain-to-source voltage of the CSD19538Q2T?

    The maximum drain-to-source voltage (VDS) is 100V.

  2. What is the typical on-state resistance of the CSD19538Q2T at VGS = 10V?

    The typical on-state resistance (RDS(on)) at VGS = 10V is 49 mΩ.

  3. What is the gate charge total (Qg) of the CSD19538Q2T?

    The gate charge total (Qg) is 4.3 nC.

  4. What is the operating junction temperature range of the CSD19538Q2T?

    The operating junction temperature range is -55°C to 150°C.

  5. Is the CSD19538Q2T RoHS compliant?
  6. What are the typical applications of the CSD19538Q2T?

    The CSD19538Q2T is typically used in Power over Ethernet (PoE) systems, Power Sourcing Equipment (PSE), and motor control applications.

  7. What is the package type of the CSD19538Q2T?

    The package type is SON 2mm × 2mm plastic package.

  8. What is the maximum pulsed drain current of the CSD19538Q2T?

    The maximum pulsed drain current (IDM) is 34.4 A.

  9. What is the thermal resistance (RθJA) of the CSD19538Q2T?

    The thermal resistance (RθJA) is 50°C/W when mounted on a 1in² (6.45cm²) of 2oz (0.071mm) thick Cu.

  10. Is the CSD19538Q2T avalanche rated?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:13.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:59mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5.6 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:454 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 20.2W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-WSON (2x2)
Package / Case:6-WDFN Exposed Pad
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Similar Products

Part Number CSD19538Q2T CSD19538Q2
Manufacturer Texas Instruments Texas Instruments
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 13.1A (Tc) 14.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 59mOhm @ 5A, 10V 59mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 3.8V @ 250µA 3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.6 nC @ 10 V 5.6 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 454 pF @ 50 V 454 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta), 20.2W (Tc) 2.5W (Ta), 20.2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 6-WSON (2x2) 6-WSON (2x2)
Package / Case 6-WDFN Exposed Pad 6-WDFN Exposed Pad

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