CSD19538Q2
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Texas Instruments CSD19538Q2

Manufacturer No:
CSD19538Q2
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 14.4A 6WSON
Delivery:
Payment:
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Product Introduction

Overview

The CSD19538Q2 is a 100V N-Channel NexFET™ power MOSFET produced by Texas Instruments. This device is designed to offer high performance and efficiency in various power management applications. It features an ultra-low on-state resistance and low gate charge, making it suitable for high-frequency switching and high-power density designs. The MOSFET is packaged in a 2mm x 2mm WSON-6 package, which is optimized for thermal performance and compact design.

Key Specifications

Parameter Test Conditions Min Max Unit
VDS (Drain-to-Source Voltage) VGS = 0 V, ID = 250 μA - - 100 V
VGS (Gate-to-Source Voltage) - - - ±20 V
ID (Continuous Drain Current, Package Limited) - - - 14.4 A
ID (Continuous Drain Current, Silicon Limited, TC = 25°C) - - - 13.1 A
ID (Pulsed Drain Current) - - - 34.4 A
PD (Power Dissipation, TC = 25°C) - - - 20.2 W
TJ, Tstg (Operating Junction Temperature, Storage Temperature) - -55 - 150 °C
VGS(th) (Gate-to-Source Threshold Voltage) VDS = VGS, ID = 250 μA 2.8 3.2 3.8 V
RDS(on) (Drain-to-Source On-Resistance) VGS = 6 V, ID = 5 A 58 72 -
RDS(on) (Drain-to-Source On-Resistance) VGS = 10 V, ID = 5 A 49 59 -

Key Features

  • Ultra-Low On-State Resistance: The CSD19538Q2 features a low RDS(on) of 49-59 mΩ at VGS = 10 V and ID = 5 A, enhancing efficiency in high-power applications.
  • Low Gate Charge: Ultra-low Qg and Qgd reduce switching losses and improve high-frequency performance.
  • Compact Package: The 2mm x 2mm WSON-6 package is designed for thermal efficiency and compact design, making it ideal for space-constrained applications.
  • High Current Capability: Continuous drain current up to 14.4 A and pulsed drain current up to 34.4 A, suitable for demanding power management tasks.
  • Wide Operating Temperature Range: The device operates over a temperature range of -55°C to 150°C, ensuring reliability in various environmental conditions.

Applications

  • Power Supplies: Suitable for DC-DC converters, power adapters, and other power supply applications due to its high efficiency and low on-state resistance.
  • Motor Control: Used in motor drive applications where high current and low losses are critical.
  • Industrial Automation: Ideal for use in industrial automation systems that require reliable and efficient power management.
  • Aerospace and Defense: Its robust performance and wide temperature range make it suitable for aerospace and defense applications.
  • Consumer Electronics: Can be used in high-power consumer electronics such as gaming consoles, servers, and other high-performance devices.

Q & A

  1. What is the maximum drain-to-source voltage of the CSD19538Q2?

    The maximum drain-to-source voltage (VDS) is 100 V.

  2. What is the typical on-state resistance of the CSD19538Q2?

    The typical on-state resistance (RDS(on)) is 49-59 mΩ at VGS = 10 V and ID = 5 A.

  3. What is the package type of the CSD19538Q2?

    The package type is WSON-6, with dimensions of 2mm x 2mm.

  4. What is the continuous drain current rating of the CSD19538Q2?

    The continuous drain current rating is up to 14.4 A.

  5. What is the operating junction temperature range of the CSD19538Q2?

    The operating junction temperature range is -55°C to 150°C.

  6. What are the key features of the CSD19538Q2?

    The key features include ultra-low on-state resistance, low gate charge, compact package, high current capability, and a wide operating temperature range.

  7. In what types of applications is the CSD19538Q2 commonly used?

    Common applications include power supplies, motor control, industrial automation, aerospace and defense, and consumer electronics.

  8. What is the maximum pulsed drain current of the CSD19538Q2?

    The maximum pulsed drain current is 34.4 A.

  9. How does the CSD19538Q2 handle thermal performance?

    The device is designed with a thermal pad on the board to enhance thermal performance, and it has a maximum RθJA of 65°C/W when mounted on a 1-in² (6.45-cm²) of 2-oz (0.071-mm) thick Cu.

  10. Is the CSD19538Q2 RoHS compliant?

    Yes, the CSD19538Q2 is RoHS compliant.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:14.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:59mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5.6 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:454 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 20.2W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-WSON (2x2)
Package / Case:6-WDFN Exposed Pad
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Similar Products

Part Number CSD19538Q2 CSD19538Q2T
Manufacturer Texas Instruments Texas Instruments
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 14.4A (Ta) 13.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 59mOhm @ 5A, 10V 59mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 3.8V @ 250µA 3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.6 nC @ 10 V 5.6 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 454 pF @ 50 V 454 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta), 20.2W (Tc) 2.5W (Ta), 20.2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 6-WSON (2x2) 6-WSON (2x2)
Package / Case 6-WDFN Exposed Pad 6-WDFN Exposed Pad

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