Overview
The CSD19537Q3T is a 100-V N-channel NexFET™ power MOSFET produced by Texas Instruments. This device is designed for high-performance applications requiring low on-state resistance and high current handling. The CSD19537Q3T is packaged in a VSON-CLIP (DQG) package, which is a 3.3x3.3 mm plastic package, making it suitable for space-constrained designs. It is part of the NexFET family, known for its advanced technology that enhances power efficiency and reliability.
Key Specifications
| Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VDS Drain-to-Source Voltage | VGS = 0 V, ID = 250 μA | - | - | 100 | V |
| VGS Gate-to-Source Voltage | - | - | - | ±20 | V |
| ID Continuous Drain Current (Package Limited) | - | - | - | 9.7 | A |
| ID Continuous Drain Current (Silicon Limited), TC = 25°C | - | - | - | 53 | A |
| IDM Pulsed Drain Current | - | - | - | 219 | A |
| PD Power Dissipation | - | - | - | 2.8 | W |
| TJ, Tstg Operating Junction Temperature, Storage Temperature | - | -55 | - | 150 | °C |
| RDS(on) Drain-to-Source On-Resistance | VGS = 6 V, ID = 10 A | 13.8 | 16.6 | - | mΩ |
| RθJA Junction-to-Ambient Thermal Resistance | - | - | - | 55 | °C/W |
Key Features
- High Voltage Rating: The CSD19537Q3T has a drain-to-source voltage rating of 100 V, making it suitable for high-voltage applications.
- Low On-State Resistance: With an on-state resistance (RDS(on)) as low as 13.8 mΩ at VGS = 6 V and ID = 10 A, this MOSFET minimizes power losses.
- High Current Handling: The device can handle continuous drain currents up to 9.7 A (package limited) and 53 A (silicon limited) at TC = 25°C.
- Compact Package: The VSON-CLIP (DQG) package is a 3.3x3.3 mm plastic package, ideal for space-constrained designs.
- Thermal Performance: The MOSFET has a junction-to-ambient thermal resistance (RθJA) of 55°C/W, ensuring efficient heat dissipation.
Applications
- Power Supplies: Suitable for use in high-efficiency power supplies, including switch-mode power supplies and DC-DC converters.
- Motor Control: Used in motor control applications due to its high current handling and low on-state resistance.
- Industrial Automation: Ideal for various industrial automation applications requiring high reliability and performance.
- Automotive Systems: Can be used in automotive systems that require high voltage and current handling capabilities.
Q & A
- What is the maximum drain-to-source voltage rating of the CSD19537Q3T?
The maximum drain-to-source voltage rating is 100 V.
- What is the typical on-state resistance of the CSD19537Q3T at VGS = 6 V and ID = 10 A?
The typical on-state resistance is 16.6 mΩ.
- What is the continuous drain current rating of the CSD19537Q3T?
The continuous drain current rating is 9.7 A (package limited) and 53 A (silicon limited) at TC = 25°C.
- What is the junction-to-ambient thermal resistance of the CSD19537Q3T?
The junction-to-ambient thermal resistance is 55°C/W.
- What package type is the CSD19537Q3T available in?
The CSD19537Q3T is available in a VSON-CLIP (DQG) package.
- What are the operating junction and storage temperature ranges for the CSD19537Q3T?
The operating junction and storage temperature ranges are -55°C to 150°C.
- What is the gate-to-source threshold voltage range of the CSD19537Q3T?
The gate-to-source threshold voltage range is 2.6 V to 3.6 V.
- What is the maximum pulsed drain current rating of the CSD19537Q3T?
The maximum pulsed drain current rating is 219 A.
- What are some typical applications of the CSD19537Q3T?
Typical applications include power supplies, motor control, industrial automation, and automotive systems.
- Is the CSD19537Q3T RoHS compliant?
Yes, the CSD19537Q3T is RoHS compliant.
