Overview
The Texas Instruments CSD19537Q3 is a high-performance N-channel NexFET™ power MOSFET designed for a variety of power management applications. This device is packaged in a compact 8-VSON-CLIP package, measuring 3 mm x 3 mm, making it ideal for space-constrained designs. The CSD19537Q3 features a low on-resistance (Rds(on)) of 14.5 mΩ, a high drain to source breakdown voltage of 100 V, and a continuous drain current (ID) of 9.7 A. These characteristics make it suitable for applications requiring high efficiency and reliability.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Case/Package | VSON-8-EP(3.3x3.3) | |
| Continuous Drain Current (ID) | 9.7 | A |
| Drain to Source Breakdown Voltage | 100 | V |
| Drain to Source Resistance (Rds(on)) | 14.5 | mΩ |
| Gate to Source Voltage (Vgs) | 20 | V |
| Max Junction Temperature (Tj) | 150 | °C |
| Max Operating Temperature | 150 | °C |
| Max Power Dissipation | 2.8 | W |
| Min Operating Temperature | -55 | °C |
| Number of Channels | 1 | |
| Number of Pins | 8 | |
| Rise Time | 3 | ns |
| Fall Time | 3 | ns |
| Threshold Voltage | 3 | V |
| RoHS Compliance | Yes |
Key Features
- Low on-resistance (Rds(on)) of 14.5 mΩ for high efficiency.
- High drain to source breakdown voltage of 100 V for robust operation.
- Continuous drain current (ID) of 9.7 A to handle high current applications.
- Compact VSON-8-EP(3.3x3.3) package for space-saving designs.
- Operating temperature range from -55°C to 150°C for wide application suitability.
- Fast switching times with rise and fall times of 3 ns each.
- RoHS compliant for environmental sustainability.
Applications
The Texas Instruments CSD19537Q3 is versatile and can be used in a variety of applications, including:
- Power management systems in consumer electronics.
- Automotive systems requiring high reliability and efficiency.
- Industrial power supplies and motor control systems.
- Renewable energy systems such as solar and wind power.
- High-performance computing and data center power management.
Q & A
- What is the package type of the CSD19537Q3? The CSD19537Q3 is packaged in a VSON-8-EP(3.3x3.3) package.
- What is the maximum drain to source breakdown voltage of the CSD19537Q3? The maximum drain to source breakdown voltage is 100 V.
- What is the continuous drain current (ID) of the CSD19537Q3? The continuous drain current (ID) is 9.7 A.
- What is the on-resistance (Rds(on)) of the CSD19537Q3? The on-resistance (Rds(on)) is 14.5 mΩ.
- Is the CSD19537Q3 RoHS compliant? Yes, the CSD19537Q3 is RoHS compliant.
- What is the operating temperature range of the CSD19537Q3? The operating temperature range is from -55°C to 150°C.
- What are the rise and fall times of the CSD19537Q3? The rise and fall times are both 3 ns.
- What is the maximum power dissipation of the CSD19537Q3? The maximum power dissipation is 2.8 W.
- What are some typical applications of the CSD19537Q3? Typical applications include power management in consumer electronics, automotive systems, industrial power supplies, renewable energy systems, and high-performance computing.
- Where can I find the datasheet for the CSD19537Q3? The datasheet can be found on the official Texas Instruments website or through distributors like Fusion Worldwide, JLCPCB, and LCSC.
