CSD18537NQ5A
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Texas Instruments CSD18537NQ5A

Manufacturer No:
CSD18537NQ5A
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 50A 8VSON
Delivery:
Payment:
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Product Introduction

Overview

The CSD18537NQ5A is a high-performance N-channel MOSFET produced by Texas Instruments. Designed for power management applications, this MOSFET is part of the NexFET™ power MOSFET series, known for its low on-resistance and high efficiency. The CSD18537NQ5A is ideal for use in switching power supplies, motor drives, and other high-current applications. Its compact packaging and robust design make it suitable for both industrial and consumer electronics. With its advanced technology, the CSD18537NQ5A offers superior thermal performance and reliability, positioning it as a competitive choice in the power MOSFET market.

Key Specifications

ParameterValueUnitNotes
Drain-Source Voltage (VDS)60V
Continuous Drain Current (ID)75A
On-Resistance (RDS(on))2.2@ VGS = 10V
Gate-Source Voltage (VGS)±20V
Power Dissipation (PD)238W
Operating Junction Temperature (TJ)-55 to 150°C
PackageSON (5x6)

Key Features

  • Low On-Resistance: Minimizes conduction losses, improving efficiency.
  • High Current Handling: Supports up to 75A continuous drain current.
  • Thermal Performance: Excellent thermal management with a power dissipation of 238W.
  • Compact Design: SON (5x6) package saves board space.
  • Robust Construction: Designed for reliability in demanding environments.

Applications

The CSD18537NQ5A is widely used in various applications, including:

  • Switching Power Supplies: Efficient power conversion with minimal losses.
  • Motor Drives: High current handling for motor control circuits.
  • DC-DC Converters: Suitable for step-up/step-down voltage regulation.
  • Battery Management Systems: Ensures reliable power delivery in portable devices.
  • Industrial Automation: Robust performance in harsh industrial environments.

Q & A

1. What is the maximum drain-source voltage for the CSD18537NQ5A?

The maximum drain-source voltage (VDS) is 60V.

2. What is the continuous drain current rating?

The continuous drain current (ID) is 75A.

3. What is the typical on-resistance?

The typical on-resistance (RDS(on)) is 2.2mΩ at VGS = 10V.

4. What is the operating junction temperature range?

The operating junction temperature (TJ) ranges from -55°C to 150°C.

5. What package does the CSD18537NQ5A use?

It uses a SON (5x6) package.

6. Is the CSD18537NQ5A suitable for motor drive applications?

Yes, it is suitable for motor drive applications due to its high current handling capability.

7. Can the CSD18537NQ5A be used in DC-DC converters?

Yes, it is suitable for DC-DC converters due to its low on-resistance and high efficiency.

8. What is the power dissipation of the CSD18537NQ5A?

The power dissipation (PD) is 238W.

9. Is the CSD18537NQ5A suitable for industrial applications?

Yes, its robust design and thermal performance make it suitable for industrial applications.

10. What is the gate-source voltage range?

The gate-source voltage (VGS) range is ±20V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:13mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:18 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1480 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):3.2W (Ta), 75W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSONP (5x6)
Package / Case:8-PowerTDFN
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Similar Products

Part Number CSD18537NQ5A CSD18537NQ5AT
Manufacturer Texas Instruments Texas Instruments
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc) 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 13mOhm @ 12A, 10V 13mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V 18 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1480 pF @ 30 V 1480 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 3.2W (Ta), 75W (Tc) 3.2W (Ta), 75W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-VSONP (5x6) 8-VSONP (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN

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