CSD18537NQ5A
  • Share:

Texas Instruments CSD18537NQ5A

Manufacturer No:
CSD18537NQ5A
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 50A 8VSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CSD18537NQ5A is a high-performance N-channel MOSFET produced by Texas Instruments. Designed for power management applications, this MOSFET is part of the NexFET™ power MOSFET series, known for its low on-resistance and high efficiency. The CSD18537NQ5A is ideal for use in switching power supplies, motor drives, and other high-current applications. Its compact packaging and robust design make it suitable for both industrial and consumer electronics. With its advanced technology, the CSD18537NQ5A offers superior thermal performance and reliability, positioning it as a competitive choice in the power MOSFET market.

Key Specifications

ParameterValueUnitNotes
Drain-Source Voltage (VDS)60V
Continuous Drain Current (ID)75A
On-Resistance (RDS(on))2.2@ VGS = 10V
Gate-Source Voltage (VGS)±20V
Power Dissipation (PD)238W
Operating Junction Temperature (TJ)-55 to 150°C
PackageSON (5x6)

Key Features

  • Low On-Resistance: Minimizes conduction losses, improving efficiency.
  • High Current Handling: Supports up to 75A continuous drain current.
  • Thermal Performance: Excellent thermal management with a power dissipation of 238W.
  • Compact Design: SON (5x6) package saves board space.
  • Robust Construction: Designed for reliability in demanding environments.

Applications

The CSD18537NQ5A is widely used in various applications, including:

  • Switching Power Supplies: Efficient power conversion with minimal losses.
  • Motor Drives: High current handling for motor control circuits.
  • DC-DC Converters: Suitable for step-up/step-down voltage regulation.
  • Battery Management Systems: Ensures reliable power delivery in portable devices.
  • Industrial Automation: Robust performance in harsh industrial environments.

Q & A

1. What is the maximum drain-source voltage for the CSD18537NQ5A?

The maximum drain-source voltage (VDS) is 60V.

2. What is the continuous drain current rating?

The continuous drain current (ID) is 75A.

3. What is the typical on-resistance?

The typical on-resistance (RDS(on)) is 2.2mΩ at VGS = 10V.

4. What is the operating junction temperature range?

The operating junction temperature (TJ) ranges from -55°C to 150°C.

5. What package does the CSD18537NQ5A use?

It uses a SON (5x6) package.

6. Is the CSD18537NQ5A suitable for motor drive applications?

Yes, it is suitable for motor drive applications due to its high current handling capability.

7. Can the CSD18537NQ5A be used in DC-DC converters?

Yes, it is suitable for DC-DC converters due to its low on-resistance and high efficiency.

8. What is the power dissipation of the CSD18537NQ5A?

The power dissipation (PD) is 238W.

9. Is the CSD18537NQ5A suitable for industrial applications?

Yes, its robust design and thermal performance make it suitable for industrial applications.

10. What is the gate-source voltage range?

The gate-source voltage (VGS) range is ±20V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:13mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:18 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1480 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):3.2W (Ta), 75W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSONP (5x6)
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$1.00
471

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV5X
DD15S2S5WV5X
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LV5S
DD15S20LV5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20Z0X/AA
DD15S20Z0X/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20W0S
DD15S20W0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200V5S
DD15S200V5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S20000/AA
DD26S20000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC9W4S10HES/AA
CBC9W4S10HES/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2S0V3X/AA
DD26S2S0V3X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V50
DD26S2S0V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200T0
DD44S3200T0
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WTX
DD26S20WTX
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60V3X
DD44S32S60V3X
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number CSD18537NQ5A CSD18537NQ5AT
Manufacturer Texas Instruments Texas Instruments
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc) 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 13mOhm @ 12A, 10V 13mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V 18 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1480 pF @ 30 V 1480 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 3.2W (Ta), 75W (Tc) 3.2W (Ta), 75W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-VSONP (5x6) 8-VSONP (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN

Related Product By Categories

NTH4LN019N65S3H
NTH4LN019N65S3H
onsemi
POWER MOSFET, N-CHANNEL, SUPERFE
FDB12N50TM
FDB12N50TM
onsemi
MOSFET N-CH 500V 11.5A D2PAK
PSMN1R0-40YLDX
PSMN1R0-40YLDX
Nexperia USA Inc.
MOSFET N-CH 40V 280A LFPAK56
IPW65R080CFDAFKSA1
IPW65R080CFDAFKSA1
Infineon Technologies
MOSFET N-CH 650V 43.3A TO247-3
2N7002-TP
2N7002-TP
Micro Commercial Co
MOSFET N-CH 60V 115MA SOT23
FQD7P06TM
FQD7P06TM
onsemi
MOSFET P-CH 60V 5.4A DPAK
PSMN2R0-30YLE,115
PSMN2R0-30YLE,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
STH275N8F7-2AG
STH275N8F7-2AG
STMicroelectronics
MOSFET N-CH 80V 180A H2PAK-2
STB100N10F7
STB100N10F7
STMicroelectronics
MOSFET N-CH 100V 80A D2PAK
STL36N55M5
STL36N55M5
STMicroelectronics
MOSFET N-CH 550V 22.5A 4PWRFLAT
BSS138K-7
BSS138K-7
Diodes Incorporated
MOSFET N-CH 50V SOT23 T&R 3K
2N7002TC
2N7002TC
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT23-3

Related Product By Brand

DP83867ERGZ-R-EVM
DP83867ERGZ-R-EVM
Texas Instruments
EVAL DP83867ERGZ
TMS320DM642AGNZ7
TMS320DM642AGNZ7
Texas Instruments
IC FIXED-POINT DSP 548-FCBGA
MSP430G2210IDR
MSP430G2210IDR
Texas Instruments
IC MCU 16BIT 2KB FLASH 8SOIC
TS5A4597DCKR
TS5A4597DCKR
Texas Instruments
IC SWITCH SPST SC70-5
TPS26610DDFR
TPS26610DDFR
Texas Instruments
50-V, UNIVERSAL 4-20-MA, 20-MA C
TPS7A2036PDQNR
TPS7A2036PDQNR
Texas Instruments
300-MA, ULTRA-LOW-NOISE, LOW-IQ,
TPS7A0333PDBVR
TPS7A0333PDBVR
Texas Instruments
IC REG LINEAR 3.3V 200MA SOT23-5
LP3878SD-ADJ/NOPB
LP3878SD-ADJ/NOPB
Texas Instruments
IC REG LIN POS ADJ 800MA 8WSON
LP2985IM5-3.1/NOPB
LP2985IM5-3.1/NOPB
Texas Instruments
IC REG LINEAR 3.1V 150MA SOT23-5
TPS70928QDRVRQ1
TPS70928QDRVRQ1
Texas Instruments
IC REG LINEAR 2.8V 150MA 6WSON
LP2985AITL-3.3/NOPB
LP2985AITL-3.3/NOPB
Texas Instruments
IC REG LINEAR 3.3V 150MA 5DSBGA
ISO7641FCDWR
ISO7641FCDWR
Texas Instruments
DGTL ISO 2500VRMS 4CH GP 16SOIC