CSD18537NQ5AT
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Texas Instruments CSD18537NQ5AT

Manufacturer No:
CSD18537NQ5AT
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 50A 8VSON
Delivery:
Payment:
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Product Introduction

Overview

The CSD18537NQ5AT is a high-performance N-channel MOSFET produced by Texas Instruments. Designed for power management applications, this MOSFET is part of the NexFET™ product family, known for its low on-resistance and high efficiency. It is ideal for use in applications such as DC-DC converters, motor drives, and load switches. The CSD18537NQ5AT is particularly suited for industrial, automotive, and consumer electronics due to its robust performance and reliability. Its compact package and advanced thermal management make it a competitive choice for modern power systems.

Key Specifications

ParameterValueUnitNotes
Drain-Source Voltage (VDS)60VMaximum
Continuous Drain Current (ID)75AAt TC = 25°C
On-Resistance (RDS(on))2.2At VGS = 10V
Gate-Source Voltage (VGS)±20VMaximum
Power Dissipation (PD)300WAt TC = 25°C
Operating Junction Temperature (TJ)-55 to 150°C
PackageSON 5x6Compact and thermally efficient

Key Features

  • Low On-Resistance: Minimizes power losses and improves efficiency in high-current applications.
  • High Current Handling: Supports up to 75A continuous drain current, making it suitable for demanding applications.
  • Thermal Efficiency: SON 5x6 package ensures effective heat dissipation, enhancing reliability.
  • Robust Design: Designed to withstand high voltage and temperature conditions, ensuring durability in harsh environments.
  • Fast Switching: Optimized for high-frequency applications, reducing switching losses.

Applications

The CSD18537NQ5AT is widely used in various industries due to its versatility and performance. Key applications include:

  • DC-DC Converters: Efficient power conversion in industrial and automotive systems.
  • Motor Drives: Provides reliable control in motor drive circuits for robotics and automation.
  • Load Switches: Ensures efficient power distribution in consumer electronics and IoT devices.
  • Power Supplies: Enhances performance in high-efficiency power supply designs.

Q & A

1. What is the maximum drain-source voltage of the CSD18537NQ5AT?

The maximum drain-source voltage is 60V.

2. What is the continuous drain current rating?

The continuous drain current is 75A at 25°C.

3. What is the typical on-resistance?

The typical on-resistance is 2.2mΩ at VGS = 10V.

4. What package does the CSD18537NQ5AT use?

It uses the SON 5x6 package.

5. Is this MOSFET suitable for automotive applications?

Yes, it is designed to meet the rigorous demands of automotive applications.

6. What is the operating temperature range?

The operating junction temperature ranges from -55°C to 150°C.

7. Can this MOSFET handle high-frequency switching?

Yes, it is optimized for fast switching in high-frequency applications.

8. What is the gate-source voltage limit?

The gate-source voltage limit is ±20V.

9. How does the SON 5x6 package improve performance?

The compact SON 5x6 package enhances thermal efficiency, ensuring better heat dissipation.

10. Where can I find detailed specifications for this MOSFET?

Detailed specifications can be found in the official datasheet on the Texas Instruments website.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:13mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:18 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1480 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):3.2W (Ta), 75W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSONP (5x6)
Package / Case:8-PowerTDFN
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Similar Products

Part Number CSD18537NQ5AT CSD18537NQ5A
Manufacturer Texas Instruments Texas Instruments
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc) 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 13mOhm @ 12A, 10V 13mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V 18 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1480 pF @ 30 V 1480 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 3.2W (Ta), 75W (Tc) 3.2W (Ta), 75W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-VSONP (5x6) 8-VSONP (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN

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