CSD17579Q3A
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Texas Instruments CSD17579Q3A

Manufacturer No:
CSD17579Q3A
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 20A 8VSON
Delivery:
Payment:
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Product Introduction

Overview

The CSD17579Q3A is a high-performance N-channel MOSFET designed and manufactured by Texas Instruments. It belongs to the NexFET™ series, known for its efficiency and reliability in power conversion applications. This surface-mount device is housed in a compact VSONP8 package, making it suitable for space-constrained designs. With a maximum drain-source voltage of 30V and a continuous drain current of 39A, the CSD17579Q3A is ideal for low-voltage, high-current applications. Its low on-resistance (RDS(on)) and fast switching capabilities make it a preferred choice for power management, motor control, and DC-DC converters.

Key Specifications

ParameterValueUnitNotes
ConfigurationSingle--
Threshold Voltage1.9V@250µA
Transistor TypeN-channel--
Power Dissipation29W@Tc
Gate Charge (Qg)5.3nC-
Reverse Transfer Capacitance (Crss)38pF-
Gate-Source Breakdown Voltage±20V-
Breakdown Voltage (VDSS)30V-
Storage Temperature-55 to +150°C-
Pin Count8--
Dimensions3.22 x 3.12mm-
CertificationRoHS--
RDS(on) (max)10.2@8A, 10V
Moisture Sensitivity Level (MSL)1-Unlimited
Lead-FreeYes--
SeriesNexFET™--
StatusActive--
Continuous Drain Current39A-
Operating Temperature-55 to +150°C-
Mounting TypeSMT--
PackageVSONP8--

Key Features

  • Low gate charge (Qg) and reverse transfer capacitance (Crss) for fast switching.
  • Low on-resistance (RDS(on)) minimizes power loss and improves efficiency.
  • Compact VSONP8 package for space-constrained designs.
  • RoHS compliant and lead-free, ensuring environmental safety.
  • High current handling capability (39A continuous drain current).

Applications

The CSD17579Q3A is widely used in various applications, including:

  • Power Management: Efficiently manages power in low-voltage systems such as battery management and DC-DC converters.
  • Motor Control: Suitable for driving motors in applications like electric vehicles and drones due to its high current capacity.
  • DC-DC Converters: Enhances efficiency in power conversion circuits, making it ideal for adapters and energy converters.
  • Switching Applications: Used in power switches for inverters and power supply units (PSUs).

Q & A

1. What is the maximum drain-source voltage of the CSD17579Q3A?

The maximum drain-source voltage (VDSS) is 30V.

2. What is the continuous drain current rating?

The continuous drain current (ID) is 39A.

3. Is the CSD17579Q3A RoHS compliant?

Yes, it is RoHS compliant and lead-free.

4. What is the typical gate charge (Qg) of this MOSFET?

The typical gate charge is 5.3nC.

5. What is the on-resistance (RDS(on)) at VGS = 10V?

The maximum on-resistance is 10.2mΩ at VGS = 10V.

6. What is the operating temperature range?

The operating temperature ranges from -55°C to +150°C.

7. What package does the CSD17579Q3A use?

It uses a VSONP8 package.

8. Can this MOSFET be used in motor control applications?

Yes, its high current capacity makes it suitable for motor control in applications like electric vehicles and drones.

9. What is the threshold voltage (VGS(th))?

The threshold voltage is 1.9V at 250µA.

10. Is the CSD17579Q3A suitable for DC-DC converters?

Yes, its low on-resistance and fast switching make it ideal for DC-DC converters.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:20A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:10.2mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:998 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):3.2W (Ta), 29W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSONP (3x3.3)
Package / Case:8-PowerVDFN
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Similar Products

Part Number CSD17579Q3A CSD17579Q5A CSD17579Q3AT CSD17577Q3A CSD17578Q3A
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta) 25A (Ta) 20A (Ta) 35A (Ta) 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 10.2mOhm @ 8A, 10V 9.7mOhm @ 8A, 10V 10.2mOhm @ 8A, 10V 4.8mOhm @ 16A, 10V 7.3mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 1.9V @ 250µA 2V @ 250µA 1.9V @ 250µA 1.8V @ 250µA 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V 15.1 nC @ 10 V 15 nC @ 10 V 35 nC @ 10 V 22.2 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 998 pF @ 15 V 1030 pF @ 15 V 998 pF @ 15 V 2310 pF @ 15 V 1590 pF @ 15 V
FET Feature - - - - -
Power Dissipation (Max) 3.2W (Ta), 29W (Tc) 3.1W (Ta), 36W (Tc) 3.2W (Ta), 29W (Tc) 2.8W (Ta), 53W (Tc) 3.2W (Ta), 37W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-VSONP (3x3.3) 8-VSONP (5x6) 8-VSONP (3x3.3) 8-VSONP (3x3.3) 8-VSONP (3x3.3)
Package / Case 8-PowerVDFN 8-PowerTDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN

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